Vishay Siliconix
SUD50P04-08
Document Number: 65594
S10-0034-Rev. A, 11-Jan-10
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1
P-Channel 40-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Switch
• Load Switch in High Current Applications
• DC/DC Converters
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)I
D (A) Qg (Typ.)
- 40
0.0081 at VGS = - 10 V - 50d
60
0.0117 at VGS = - 4.5 V - 48d
TO-252
SGD
Top View
Drain Connected to Tab
Ordering Information: SUD50P04-08-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 40 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID
- 50d
A
TC = 70 °C - 50d
Pulsed Drain Current IDM - 100
Avalanche Current IAS - 46
Single Avalanche EnergyaL = 0.1 mH EAS 106 mJ
Maximum Power DissipationaTC = 25 °C
PD
73.5b
W
TA = 25 °Cc2.5
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient (PCB Mount)cRthJA 50 °C/W
Junction-to-Case (Drain) RthJC 1.7
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Document Number: 65594
S10-0034-Rev. A, 11-Jan-10
Vishay Siliconix
SUD50P04-08
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = - 250 µA - 40 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 2.5
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 40 V, VGS = 0 V - 1
µA
VDS = - 40 V, VGS = 0 V, TJ = 125 °C - 50
VDS = - 40 V, VGS = 0 V, TJ = 150 °C - 250
On-State Drain CurrentaID(on) V
DS ≤ - 10 V, VGS = - 10 V - 50 A
Drain-Source On-State ResistanceaRDS(on)
VGS = - 10 V, ID = - 22 A 0.0067 0.0081 Ω
VGS = - 4.5 V, ID = - 19 A 0.0097 0.0117
Forward Transconductanceagfs VDS = - 15 V, ID = - 22 A 45 S
Dynamicb
Input Capacitance Ciss
VGS = 0 V, VDS = - 20 V, f = 1 MHz
5380
pFOutput Capacitance Coss 570
Reverse Transfer Capacitance Crss 500
Total Gate ChargecQg
VDS = - 20 V, VGS = - 10 V, ID = - 20 A 106 159
nC
VDS = - 20 V, VGS = - 4.5 V, ID = - 20 A
60 90
Gate-Source ChargecQgs 22
Gate-Drain ChargecQgd 27
Gate Resistance Rgf = 1 MHz 0.4 1.8 3.6 Ω
Tur n - O n D e l ay Timectd(on)
VDD = - 20 V, RL = 2 Ω
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
15 23
ns
Rise Timectr12 18
Turn-Off Delay Timectd(off) 70 105
Fall Timectf18 27
Drain-Source Body Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current IS- 50 A
Pulsed Current ISM - 100
Forward VoltageaVSD IF = - 10 A, VGS = 0 V - 0.8 - 1.5 V
Reverse Recovery Time trr
IF = - 10 A, dI/dt = 100 A/µs
35 53 ns
Peak Reverse Recovery Current IRM(REC) - 2 - 3 A
Reverse Recovery Charge Qrr 33 50 nC
Vishay Siliconix
SUD50P04-08
Document Number: 65594
S10-0034-Rev. A, 11-Jan-10
www.vishay.com
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
Transfer Characteristics
Transconductance
0
20
40
60
80
100
0.0 0.5 1.0 1.5 2.0 2.5
VGS =10Vthru5V
VGS =3V
VGS =4V
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)I D
0
2
4
6
8
10
01234
TC= 25 °C
TC=125 °C
TC= - 55 °C
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)I D
0
25
50
75
100
0 1020304050
TC= 125 °C
TC= - 55 °C
TC= 25 °C
- Transconductance (S)g
fs
ID- Drain Current (A)
On-Resistance vs. Drain Current
On-Resistance vs. Gate-to-Source Voltage
Gate Charge
0.003
0.006
0.009
0.012
0.015
020406080 100
VGS =10V
VGS =4.5V
- On-Resistance (Ω)RDS(on)
ID- Drain Current (A)
0.000
0.006
0.012
0.018
0.024
0.030
246810
TJ= 25 °C
TJ= 150 °C
- On-Resistance (Ω)
RDS(on)
VGS - Gate-to-Source Voltage (V)
0
2
4
6
8
10
0 30 60 90 120
VDS =32V
ID=20A
VDS =20V
VDS =10V
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VGS
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Document Number: 65594
S10-0034-Rev. A, 11-Jan-10
Vishay Siliconix
SUD50P04-08
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Capacitance
On-Resistance vs. Junction Temperature
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2
TJ= 25 °C
TJ= 150 °C
VSD -Source-to-Drain Voltage (V)
- Source Current (A)I S
0
2000
4000
6000
8000
010203040
Ciss
Coss
Crss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
- 50 - 25 0 25 50 75 100 125 150
TJ-Junction Temperature (°C)
(Normalized)
- On-Resistance
RDS(on)
0.5
0.8
1.1
1.4
1.7
2.0
ID=20A
VGS =4.5V
VGS =10V
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
Current Derating
- 2.5
- 2.2
- 1.9
- 1.6
- 1.3
- 1.0
- 50 - 25 0 25 50 75 100 125 150
ID= 250 µA
(V)VGS(th)
TJ- Temperature (°C)
- 51
- 49
- 47
- 45
- 43
- 50 - 25 0 25 50 75 100 125 150
ID= 250 µA
VDS - Drain-to-Source Voltage (V)
TJ-Junction Temperature (°C)
0
20
40
60
80
0 255075100125150
Package Limited
TC- Case Temperature (°C)
ID- Drain Current (A)
Vishay Siliconix
SUD50P04-08
Document Number: 65594
S10-0034-Rev. A, 11-Jan-10
www.vishay.com
5
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65594.
Single Pulse Avalanche Current Capability vs. Time
Time (s)
(A)IDAV
1
10
100
10-3 10-2 10-1
10-4
10-5
TJ= 25 °C
TJ= 150 °C
Safe Operating Area
0.01
0.1
1
10
100
1000
0.1 1 10 100
1s,10s,DC
TC= 25 °C
Single Pulse BVDSS
Limited
Limited byR
DS(on)*
1ms
10 ms, 100 ms
100 µA
VDS - Drain-to-Source Voltage (V)
*VGS > minimumVGS at which RDS(on) is specified
- Drain Current (A)
ID
Normalized Thermal Transient Impedance, Junction-to-Case
10-3 10-2 001110-1
10-4 10
0.2
0.1
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Duty Cycle = 0.5
0.05
0.02
Single Pulse
Document Number: 71197 www.vishay.com
18-Apr-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-252AA CASE OUTLINE
Note
• Dimension L3 is for reference only.
L2
D
L1
L3
bb1
e1
E1
D1
A1
C
A2
gage plane height (0.5 mm)
e
b2
E
C1
A
L
H
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 2.21 2.38 0.087 0.094
A1 0.89 1.14 0.035 0.045
A2 0.030 0.127 0.001 0.005
b 0.71 0.88 0.028 0.035
b1 0.76 1.14 0.030 0.045
b2 5.23 5.44 0.206 0.214
C 0.46 0.58 0.018 0.023
C1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.10 4.45 0.161 0.175
E 6.48 6.73 0.255 0.265
E1 4.49 5.50 0.177 0.217
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.65 10.41 0.380 0.410
L 1.40 1.78 0.055 0.070
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 1.15 1.52 0.040 0.060
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
Application Note 826
Vishay Siliconix
Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.420
(10.668)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
0.243
(6.180)
0.087
(2.202)
0.090
(2.286)
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Revision: 12-Mar-12 1Document Number: 91000
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