LLE D i yassus2 O00435b 9 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER | TaR ' T-37-25 Data Sheet No. PD-9.464A HEXFET TRANSISTORS N-CHANWNEL HEXDIP" 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE G IRFDO10 IRFDO12 50 Volt, 0.20 Ohm, 1-Watt HEXDIP HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. Efficient geometry and unique processing of the HEXFET design achieve a very tow on-state resistance combined with high transconductance and great device ruggedness. HEXFETs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. The HEXDIP 4-pin, Dual-In-Line Package brings the advantages of HEXFETs to high volume applications where automatic PC Board insertion is desirable, such as circuit boards for computers, printers, telecommunications equipment and consumer products, Their com- patibility with automatic insertion equipment, low-profile and end- stackable features represent the state-of-the-art in power device packaging CASE STYLE AND DIMENSIONS 3.40 (0.134) MAX. 6.29 (0.248) MAX. ms C-105 Features For Automatic Insertion Compact, End Stackable Fast Switching Low Drive Current Easily Paralleled m Excellent Temperature Stability Product Summary Part Number | Vps } RDS(on) Ip IRFDO10 50V 0.20 1.7A IRFDO12 50V ; 0,300 1.4A | 1 | 6 | 6 29 (0.248) LIT (OC) 05 (0 238) |, .02.(0 198) oerig0H) | Tree) fire I { 5 (0 124) 340 (0.1341 1 7 i { 24110.035)__} ff Z16 {0 Cas} i i ug 0.60 (0.024) osF 0020 9.4310 ay_f 4 PLACES a 00m @ go-1so 1,44 10.048) 752 (0 300) 2FLACES = 59 (0.095) f mates: Math 2 PLACES 2.84 (0.100) NOMINAL CO) Arevits 10 SPREAD OF LEADS PRIOR TO INSTALLATION @ APPLIES TO INSTALLED LEAD CENTERS. Case Style HD-1 (Similar to JEDEC Outline MO-001AN} Dimensions in Millimeters and (Inches) wetft ee a - ae INTERNATIONAL RECTIFIER IRFD010, IRFD012 Devices ae eee Soe oe me LLE D i 4855452 g00435? QO i T-37-25 Absolute Maximum Ratings Current} @ Ranga 55 to 150 Lead Temperature - 300 (0.063 in. (1.6mm) fram case for 10s) Electrical Characteristics @ T = 25C (Unless Otherwise Specified) Vas = ov fp = 250 pA Hp ap ay yy 1 Vos > !pton) * Rpstonimax. Vas = 10V Rosten) Veg = 10V; Ip = 0.86A =2x GS = See Fig. 10 See Fig. 16 {MOSFET switching times are essentially independent of operating temperature). Plus Gate-Drain) See Fig. 17 for test circuit. charge is essentially independent of operating temperature) drain lead, 6mm {0.25 in.) . the internal from package to center of inductances, ie. - . source lead, 6mm (0.26 in.) from package to source bonding pad. - Thermal Resistance | Pina Junction-to-Ambient [ ac | - [| - | 120 [knw @| Typical socket mount C-106LLE D i 4aSs4us2 g008354 2 i INTERNATIONAL RECTIFIER Source-Drain Diode Ratings and Characteristics IRFD010, IRFD012 Devices T-37-25 Ig Continuous Source Current IRFOO10 - .- _17 A Modified MOSFET symbo! showing the Integral reverse {Body Diode) RN junction rectifier, . : IRFDO12 ~ 14 A . Igng Pulse Source Current " iRFDOIO | - 14 A 7 - (Body Diode) - - - IRFOO12 ~ a it A |- ~ Vsp Diode Forward Voltage ALL = = 1.6 V_ | tc = 28C, Ig = 1,7A, Veg = OV ter Reverse Recovery Time ALL - At 86 180 ns Ty = 25C, ip = 7.2A, dipddt = 100Alus Oar Reverse Recovered Charge ALL 015 | 0.33 | 0.78 we | Ty = 28C, ip = 7.2A, dipdt = 100A/ps fon Forward Turn-on Time ALL ti ic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp, Ty = 25C to 180C ~ Repetitive Rating: Pulse width timited by @ Vgaq= 26V, Tj = 26C. Pulse Test: Pulse width < 300 ps, @ KW = CIw max. junction temperature, See Transient L = 100 nH, Rg = 250 Duty Cycle = 2% WIK = WIC Thermal [lmpedance Curve (Fig. 5). . - 10 02 10V Ip. DRAIN CURRENT (AMPERES) Ip, GRAIN CURRENT (AMPERES) av 0 o 5 10 iS 20 Vog: DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 _ Typical Output Characteristics Tp. ORAIN CURRENT (AMPERES) Ip, DAAIN CURRENT (AMPERES) av 9 1 C-107 4 2 3 4 Vpg- DRAIN-TO-SOUACE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics O.4 Q on a 1 on tw 5|%0s = @ X Yes rR a o a i) a uw Ty=150C 0 2 4 6 a 410 Vgg: GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics - 2 te ui IN Fos (on) on ow ix) u Tp 25C Ty=150C INGLE PULSE a2 S "4 a 3 io 6? 6 402 Vpg: ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area tee. LLE D i 4assys2 gg0a83s9 4 f IRFDO10, IRFD012 Devices . INTERNATIONAL RECTIFIER T-37-25 103 S N c . YP 402 : Ww 2 _, ra Nett | 2 1 NOTES: 2 z 4. DUTY FACTOR, D=ty/to ti 2, PEAK T=Pay X Z T = 0.4 J~Pom % Zthuc * Tc Ges. TRANSCONDUCTANCE (SIEMENS) 1079 1074 4073 4072 0.4 4 40 102 ty, RECTANGULAR PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 102 80ys PULSE TEST Vos = 2 X Yes = Oo, Ty = 25C - Ipq. REVERSE DRAIN CURRENT (AMPERES) ay o.4 0 2 4 6 8 10 0.0 0.5 1.3 i.5 2.0 2.5 Ip. DRAIN CURRENT (AMPERES) Vgp. SQUACE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage BVpgg. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ~ a nM tw (NORMALIZED) Aps (on) DRAIN-TO-SOURCE ON RESISTANCE 3 Veg = 10V o.0 = 0.7550 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 6O 80 100 120 140 160 ' Ty, JUNCTION TEMPERATURE ( C) Ty, JUNCTION TEMPERATURE ( C) . Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Reststance Vs. Temperature C-108-e -- ~ = LE D i 4yassyS2 go00a3b0 O INTERNATIONAL RECTIFIER 500 5 = Cys * Cgg Sys SHORTED Cpgg = Cog = Cyg Cys Cgg 7 (yg + Cgal * Cas * Cga 400 Coss 300 200 CAPACITANCE (pF) Cc, 100 oF 2 5 10 2 5 Vog. DRAIN-TO-SOURCE VOLTAGE (VOLTS) 10% Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Ves = Ros (on)+ PRAIN-TO-SOURCE ON AESISTANCE 6 12 18 aa Ip, ORAIN CURRENT (AMPERES) 30 Fig. 12 Typical On-Resistance Vs. Drain Current VARY by TO OBTAIN REQUIRED PEAK I, TT Yes = 10V Jo t, OUT Vpn= 8 5Bpgg Fg =0.75 BYygg Fig. 14a Clamped Inductive Test Circuit IRFD010, IRFD012 Devices T-37-25 20 Tp = 7-38 ho a nm a Veg. GATE-TO-SQURCE VOLTAGE (VOLTS) 2 FOR TEST CIACUIT SEE FIGURE 17 0 4 8 12 16 Gg, TOTAL GATE CHARGE (nC} 20 Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage Tp, DRAIN CURRENT (AMPERES) 75 100 425 Te. CASE TEMPERATURE. ( C) 150 Fig. 13 Maximum Drain Current Vs. Case Temperature Fig. 14b Clamped Inductive Waveforms C-109L1E OD i 48S5S54Se g0043b1 2 i INTERNATIONAL RECTIFIER T=37-25 8Voss VARY t, TO OBTAIN REQUIRED PEAK it he Vos 2 10V tp Fig. 15a Unclamped Inductive Test Circuit -- Vn Fig 15b. Unclamped Inductive Load - Test Waveforms +V os CURRENT (ISOLATED REGULATOR , SUPPLY) SAME TYPE 12 BATTERY Vgg = 10V 'p O ~Yos L__. G = CURRENT ~ CURRENT : SAMPLING SAMPLING RESISTOR RESISTOR Fig. 16 Switching Time Test Circuit Fig. 17 Gate Charge Test Circuit 1012 1 10 , 10 e 0.1 + = = e 2 2 10 = = 2 5 g iv) = oc w = F 108 = = 2 = 0.001 104 102 0.0001 50 70 90 110 130 150 50 70 90 110 130 150 TEMPERATURE (C) TEMPERATURE (C) *Fig. 18 Typical Time to Accumulated 1% Gate Fallure *Fig. 19 Typical High Temperature Reverse Blas (HTRB) Failure Rate *The data shown is correct as of April 15, 1987. This information is updated on a : - quarterly basis; for the tatest reliability data, please contact your local IR field office. C-110