MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# TMMDB3 Features l TM Function as a trigger diode with a fixed voltage reference SILICON BIDIRECTIONAL DIAC Micro Commercial Components l The TMMDB3 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts. l The diacs are intended for use in thyrisitors phase control , MINIMELF circuits for lamp dimming, universal motor speed control ,and heat control. Maximum Ratings Cathode Ma o o l Operating Temperature: -40 C to +125 C l Storage Temperature: -40 C to +125 C o o Electrical Characteristics @ 25oC Unless Otherwise Specified Power dissipation on Printed Circuit(l=10mm) Repetitive Peak on-state Current PC I TRM 150mW C B T A=50 oC A 2.0A t p=10us,f=100Hz Breakover Voltage TMMDB3 VBO Min Typ Max 28 32 36V DIM A B C INCHES MIN .134 .008 .055 MAX .142 .016 .059 MM MIN 3.40 .20 1.40 MAX 3.60 .40 1.50 NOTE SUGGESTED SOLDER PAD LAYOUT Breakover Voltage |+VBO | Symmetry Output Voltage(Note 1) Breakover Current(Note 1) C=22nF(Note 2) DIMENSIONS -|-V BO| 3V V o(min) 5V C=22nF(Note 2) .165 .075 I BO(max) 50uA Rise Time(Note 1) Tr 2us Leakage Current(Note 1) I R(max) 10uA C=22nF .030 VR =0.5V BO(max) NOTES: 1.Electrical characteristics applicable in both forward and reverse directions. 2.Connected in parallel with the devices. www.mccsemi.com Revision: 3 2003/04/30 MCC TM TMMDB3 Diagram 1: Voltage - current characteristic curve. Micro Commercial Components Diagram 2: Test circuit. 10 k 220 V + IF 500 k D.U.T Rs=0 I C=0.1F 50 Hz P Vo 10mA T410 R=20 IBO IR -V Diagram 3: Rise time measurement. + V 0,5 VBO V lp VF 90 % VBO - IF 10 % tr Fig. 1: Relative variation of VBO versus junction temperature (typical values) Fig. 2: Repetitive peak pulse current versus pulse duration (maximum values). VBO [Tj] ITRM(A) VBO [Tj = 25C] 20.0 1.08 F=120Hz Tj initial=25C 10.0 1.06 1.04 1.0 1.02 tp(s) Tj (C) 1.00 25 50 0.1 75 100 125 1 10 100 Fig. 3: Time duration while current pulse is higher 50mA versus C and Rs (typical values). tp(s) 40 Tj=25C 68 35 30 47 25 33 20 15 22 10 10 5 0 10 C(nF) 0 20 50 100 200 500 www.mccsemi.com Revision: 3 2003/04/30