LESHAN RADIO COMPANY, LTD.
LBAS16WT1–1/4
Silicon Switching Diode
Symbol Max Unit
Continuous Reverse Voltage VR75 V
Recurrent Peak Forward Current IR200 mA
Peak Forward Surge Current
Pulse Width = 10 µsIFM(surge) 500 mA
Total Power Dissipation, One Diode Loaded
TA = 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
PD200
1.6
mW
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
RθJA 0.625 °C/mW
DEVICE MARKING
LBAS16WT1 = A6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF—
—
—
—
715
866
1000
1250
mV
Reverse Current
(VR = 75 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
IR—
—
—
1.0
50
30
µA
Capacitance
(VR = 0, f = 1.0 MHz) CD— 2.0 pF
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 Ω) (Figure 1) trr — 6.0 ns
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2) QS — 45 PC
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3) VFR — 1.75 V
3
CATHODE
1
ANODE
1
3
2
SC-70/SOT-323
LBAS16WT1
Rating
MAXIMUM RATINGS (TA = 25oC)