SBYV28-50 thru SBYV28-200
Document Number 88737
22-Jul-05
Vishay Semiconductors
www.vishay.com
1
DO-201AD
Soft Recovery Ultrafast Plastic Rectifier
Major Ratings and Characteristics
IF(AV) 3.5 A
VRRM 50 V to 200 V
IFSM 90 A
trr 20 ns
VF0.89 V
Tj max. 150 °C
Features
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Mechanical Data
Case: DO-201AD
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter Symbols SBYV28-
50
SBYV28-
100
SBYV28-
150
SBYV28-
200
Units
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V
Maximum RMS voltage VRMS 35 70 105 140 V
Maximum DC blocking voltage VDC 50 100 150 200 V
Minimum reverse breakdown voltage at 100 µA V(BR) 55 110 165 220 V
Maximum average forward rectified current 0.375" (9.5 mm)
lead lengths at TL = 85 °C
IF(AV) 3.5 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM 90 A
Operating and storage temperature range TJ, TSTG - 55 to + 150 °C
www.vishay.com
2
Document Number 88737
22-Jul-05
SBYV28-50 thru SBYV28-200
Vishay Semiconductors
Electrical Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Pulse test: tp = 300 µs, duty cycle ≤ 2 %
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Lead length = 3/8" on P.C. Board with 1.5" x 1.5" copper surface
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter Test condition Symbols SBYV28-
50
SBYV28-
100
SBYV28-
150
SBYV28-
200
Units
Maximum
instantaneous forward
voltage
at 3.5 A (1) TJ = 25 °C
TJ = 150 °C
VF 1.1
0.89
V
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
TA = 100 °C
IR 5.0
300
µA
Maximum reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
TJ = 25 °C trr 20 ns
Typical junction
capacitance
at 4.0 V, 1 MHz CJ 20 pF
Parameter Symbols SBYV28-
50
SBYV28-
100
SBYV28-
150
SBYV28-
200
Units
Typical thermal resistance (1) RθJA 25 °C/W
Figure 1. Forward Current Derating Curves
Temperature (°C)
Average Forward Rectified Current (A)
025 50 75 100 125 150 175
0
1.0
2.0
3.0
4.0
5.0
6.0
T
A
, Ambient Temperature
P.C.B. Mounted
0.5 x 0.5" (12 x 12mm)
Copper Pads
Resistive or Inductive Load
0.375" (9.5mm) Lead Length
T
L
Lead Temperature
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Number of Cycles at 50 H
Z
Peak Forward Surge Current (A)
110 100
20
30
40
50
60
70
80
90
10ms Single Half Sine-Wave
T
J
= 175°C
SBYV28-50 thru SBYV28-200
Document Number 88737
22-Jul-05
Vishay Semiconductors
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.01
0.1
1
10
100
T
J
= 100°C
T
J
=25°C
Pulse Width = 300 μs
1% Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
020 40 60 80 100
0.01
0.1
1
10
100
1,000
T
J
=25°C
T
J
= 100°C
Figure 5. Reverse Switching Characteristics
Figure 6. Typical Junction Capacitance
Junction Temperature (°C)
Recovered Store Change / Reverse
Recovery Time, nC/ns
025 50 75 100 125 150 175
0
10
20
30
40
50
60
I
F
= 4.0A
V
R
=30V
di/dt=150A/ μs
di/dt=20A/ μs
di/dt=100A/ μs
di/dt=50A/ μs
di/dt=100A/ μs
di/dt=150A/ μs
di/dt=20A/μs
t
rr
Q
rr
di/dt=50A/ μs
Reverse Voltage (V)
Junction Capacitance, pF
0.1 110 100
1
10
100
TJ=25 °C
f = 1.0MH
Z
Vsig = 50mVp-p
0.210 (5.3)
0.190 (4.8)
Dia.
0.052 (1.32)
0.048 (1.22)
Dia.
1.0 (25.4)
Min.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
DO-201AD
