ETX1000T - JDS Uniphase - Datasheet.Directory

COMMUNICATIONS COMPONENTS

Key Features • High responsivity in near infrared spectrum

• Low dark current for high accuracy

• High shunt resistance

• Linear over wide range of input optical power

• Active diameters of 0.5 and 1 mm

The JDSU ETX 500T and ETX 1000T series large-area InGaAs PIN

photodetectors have photosensitive areas with diameters of 500 and 1000 µm,

respectively. These photodiodes offer high responsivity in the 800 – 1700 nm

spectrum, and are designed for use in instrumentation, sensing, and range-

finding applications.

The detectors feature high sensitivity and linear spectral responsivity over a broad

range of input powers. When operating in photovoltaic mode, a noise current

density of 10 fA/Hz1/2 is typical at room temperature. When reverse-biased for

greater bandwidth, a noise floor of 60fA/Hz1/2 at -5 V is typical. Linear spectral

response results from the low series resistance of the photodiodes.

The ETX 500T and ETX 1000T series are optimal for the high-speed, differential

mode measurements common in precision optical power meters, optical fiber

identifiers, and optical loss test sets.

The ETX 500T and ETX1000T photodiodes are packaged in hermetically-sealed

TO cans.

Applications

• Optical power meters

• Optical fiber identifiers

• Optical attenuation test sets

• Near infrared spectroscopy

• Infrared range finders

Large-area InGaAs Photodiodes

ETX 500 and ETX 1000 Series

NORTH AMERICA:800 498-JDSU (5378) WEBSITE:www.jdsu.comWORLDWIDE:+800 5378-JDSU

(Specifications in mm unless otherwise noted.)Dimensions Diagram: ETX 500T, ETX 1000T

LARGE AREA INGAAS PHOTODIODES

Electrical Schematic

45°

PIN DIA

1.27

Ø2.54

5.4

25.4

1.0

4.70

3.20

2.50

0.5

to Chip

Wire Bond

Specifications

LARGE AREA INGAAS PHOTODIODES

Parameter ETX 500T ETX 1000T

Electrical and Optical Specifications

Conditions 25 °C, VR= 5 V 25 °C, VR= 5 V

Active diameter Typical 0.5 mm 1.0 mm

Responsivity at 850 nm Minimum 0.10 A/W 0.10 A/W

Typical 0.20 A/W 0.20 A/W

Responsivity at 1300 nm Minimum 0.80 A/W 0.80 A/W

Typical 0.90 A/W 0.90 A/W

Responsivity at 1500 nm Typical 0.95 A/W 0.95 A/W

Dark current Typical 12 nA 50 nA

Maximum 100 nA 400 nA

Shunt resistance1Minimum 5.0 MΩ2.0 MΩ

Typical 250 MΩ50 MΩ

Linearity2Typical ±0.15 dB ±0.15 dB

Total capacitance3Typical 35 pF 100 pF

Maximum 50 pF 150 pF

Bandwidth4Typical 140 MHz 35 MHz

Maximum Ratings

Reverse voltage Typical 20 V 20 V

Reverse current5Typical 10 mA 10 mA

Forward current6Typical 10 mA 10 mA

Power dissipation Typical 100 mW 100 mW

Operating temperature -40 to 85°C -40 to 85°C

Storage temperature -40 to 85°C -40 to 85°C

1. VR= 10 mV

2. For ETX 500T and ETX 1000T, to 9 dBm

3. For ETX 500T and ETX 1000T, VR= 0 V

4. -3 dB point into a 50 Ωload

5. Under reverse bias, current at which device may be damaged

6. Under forward bias, current at which device may be damaged

NORTH AMERICA:800 498-JDSU (5378) WEBSITE:www.jdsu.comWORLDWIDE:+800 5378-JDSU

Ordering Information

For more information on this or other products and their availability, please contact your local JDSU account manager or

JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide, or via e-mail at

customer.service@jdsu.com.

Sample: ETX 500T

LARGE AREA INGAAS PHOTODIODES

Product Code Description

ETX 500T 0.5 mm diode in TO46 package

ETX 1000T 1.0 mm diode in TO46 package

Precaution for Use

Glass windows must be cleaned with 99 percent pure, reagent grade Isopropanol.

ESD PROTECTION IS IMPERATIVE. Use of grounding straps, antistatic mats, and other standard ESD protective

equipment is recommended when handling or testing any InGaAs PIN or any other junction photodiode.

Quality and Reliability

JDSU maintains a strict quality control program throughout the design and manufacturing process of its photodetectors. All

products are evaluated against MIL-STD 883C, GR468, or custom specifications. JDSU purges each photodiode for 18 hours

at 125°C, with bias applied. Long-term life-testing has indicated an expected lifetime of at least 107hours for the large area

InGaAs photodiodes ETX 500 and ETX 1000T. Contact JDSU for details of specific qualification tests performed on the large-

area InGaAs photodiode series.