Philips Semiconductors Product specification N-channel junction FETs PMBFJ111; PMBFJ112; PMBFJ113 FEATURES e High-speed switching e Interchangeability of drain and source connections e Low Rpgon at zero gate voltage (< 30 Q for PMBFJ111). DESCRIPTION Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids. PINNING - SOT23 Top view MAM385 Fig.1 Simplified outline and symbol. PIN DESCRIPTION 1 drain 2 source 3 gate Note 1. Drain and source are interchangeable. April 1995 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS ; MIN. | MAX. | UNIT Vos drain-source voltage - +40 Vv Veso gate-source voltage - -40 Vv Vepo drain-drain voltage - 40 Vv Ie forward gate current - 50 mA (DC) Prot total power dissipation | Tamp=25C; |- 300 mw note 1 Tstg storage temperature -65 | 150 C Tj operating junction - 150 C temperature 487Philips Semiconductors Product specification N-channel junction FETs PMBFJ111; PMBFJ112; PMBFJ113 THERMAL CHARACTERISTICS Tj =P(Rihj-t + Rin t-s + Pin s-a) + Tamb SYMBOL PARAMETER MAX. UNIT Rth j-a from junction to ambient (note 1) 430 KAV Rihj-a from junction to ambient (note 2) 500 KW Notes 1. Mounted on a ceramic substrate, 8 mm x 10 mm x 0.7 mm. 2. Mounted on printed circuit board. STATIC CHARACTERISTICS Tj = 25 C. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ess reverse gate current -Vesg = 15 V: Vos = 0 - 1inA loss drain current Ves = 0; Vpg = 15 V PMBFJ111 20 -|mA PMBFJ112 5 - PMBFJ113 2 - Vierjass gate-source breakdown voltage |~lqg = 1A; Vos = 0 40 -|V Vasioity gate-source cut-off voltage Ip=1 WA: Vps =5 V PMBFJ111 3 10/V PMBFJ112 5 PMBFJ113 0.5 3 Rpsvon) drain-source on-resistance Vas =0V; Vpg = 0.1 V PMBFJ111 ~ 30] 2 PMBFU112 - 50 PMBFJ113 ~ 100 Aprit 1995 488Philips Semiconductors Product specification N-channel junction FETs PMBFJ111; PMBFJ112; PMBFJ113 DYNAMIC CHARACTERISTICS T, = 25C. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Ciss input capacitance Vos = 0 6 ~ pF -Veg=10V f=1 MHz Vps = 0 22 28 pF ~Ves = 0 f=1 MHz Tamb = 25 C Criss feedback capacitance Vos = 9 3 - pF -Ves =10V f= 1 MHz Switching times (see Fig.2) t tise time note 1 6 ~ ns ton turn-on time note 1 13 - ns tt fall time note 1 15 - ns tot turn-off time note 1 35 - ns Notes 1. Vpp = 10 V, Veg = 0 to Vegioin (all types); Vescot = 12 V, RL = 750 Q (PMBFUJ111); Vescoth = 7 V, RL = 1550 Q (PMBFJ112); Vesioty = 5 V, Ay = 3150 2 (PMBFJ113). Test conditions for switching times are as follows: SAMPLING DUT SCOPE 502 MBK289 Fig.2 Switching circuit. Vas =9V aN vj 90% Vas off 90% 10% Fig.3 Input and output waveforms. April 1995 489