April 1991 3
Philips Semiconductors Product specification
N-channel FETs BSR56; BSR57; BSR58
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Notes
1. Mounted on a ceramic substrate of 8 mm ×10 mm ×0.7 mm.
CHARACTERISTICS
Tj=25°C unless otherwise specified
Drain-source voltage ±VDS max. 40 V
Drain-gate voltage VDGO max. 40 V
Gate-source voltage −VGSO max. 40 V
Forward gate current IGF max. 50 mA
Total power dissipation up to Tamb =40°C (note 1) Ptot max. 250 mW
Storage temperature range Tstg −65 to +150 °C
Junction temperature Tjmax. 150 °C
From junction to ambient (note 1) Rth j-a = 430 K/W
Gate-source cut-off current
VDS =0V;−V
GS =20V −I
GSS max. 1.0 nA
Drain cut-off current
VDS =15V;−V
GS = 10 V IDSX max. 1.0 nA
BSR56 BSR57 BSR58
Drain current
VDS = 15 V; VGS =0 I
DSS >50 20 8 mA
<−100 80 mA
Gate-source breakdown voltage
−IG=1µA; VDS =0 −V
(BR)GSS >40 40 40 V
Gate-source cut-off voltage
ID= 0,5 nA; VDS = 15 V −V(P)GS >4 2 0.8 V
<10 6 4 V
Drain-source voltage (on)
ID= 20 mA; VGS =0 V
DSon <750 −−mV
ID= 10 mA; VGS =0 V
DSon <−500 −mV
ID= 5 mA; VGS =0 V
DSon <−−400 mV
Drain-source resistance (on) at f = 1 kHz
ID= 0; VGS = 0; Ta=25°Cr
ds on <25 40 60 Ω
Feedback capacitance at f = 1 MHz
−VGS = 10 V; VDS =0 C
rss <555pF