DATA SH EET
Product specification
File under Discrete Semiconductors, SC07 April 1991
DISCRETE SEMICONDUCTORS
BSR56; BSR57; BSR58
N-channel FETs
April 1991 2
Philips Semiconductors Product specification
N-channel FETs BSR56; BSR57; BSR58
DESCRIPTION
Symmetrical silicon n-channel
depletion type junction field-effect
transistors in a plastic microminiature
envelope intended for application in
thick and thin-film circuits. The
transistors are intended for
low-power, chopper or switching
applications in industrial service.
PINNING
Note
1. Drain and source are
interchangeable.
Marking code
1 = drain
2 = source
3 = gate
BSR56 = M4P
BSR57 = M5P
BSR58 = M6P
Fig.1 Simplified outline and symbol, SOT23.
handbook, halfpage
12
g
d
s
3
Top view
MAM385
QUICK REFERENCE DATA
BSR56 BSR57 BSR58
Drain-source voltage ±VDS max. 40 40 40 V
Total power dissipation up to Tamb = 40 °CP
tot max. 250 250 250 mW
Drain current
VDS = 15 V; VGS =0 I
DSS >50 20 8 mA
<−100 80 mA
Gate-source cut-off voltage
VDS = 15 V; ID= 0.5 nA −V(P)GS >4 2 0.8 V
<10 6 4 V
Drain-source resistance (on) at f = 1 kHz
ID= 0; VGS =0 r
ds on <25 40 60 Ω
Feedback capacitance at f = 1 MHz
−VGS = 10 V; VDS =0 C
rs <555pF
Turn-off time
VDD = 10 V; VGS =0
I
D= 20 mA; −VGSM = 10 V toff <25 −−ns
ID= 10 mA; −VGSM =6 V t
off <−50 −ns
ID= 5 mA; −VGSM =4 V t
off <−−100 ns
April 1991 3
Philips Semiconductors Product specification
N-channel FETs BSR56; BSR57; BSR58
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Notes
1. Mounted on a ceramic substrate of 8 mm ×10 mm ×0.7 mm.
CHARACTERISTICS
Tj=25°C unless otherwise specified
Drain-source voltage ±VDS max. 40 V
Drain-gate voltage VDGO max. 40 V
Gate-source voltage −VGSO max. 40 V
Forward gate current IGF max. 50 mA
Total power dissipation up to Tamb =40°C (note 1) Ptot max. 250 mW
Storage temperature range Tstg −65 to +150 °C
Junction temperature Tjmax. 150 °C
From junction to ambient (note 1) Rth j-a = 430 K/W
Gate-source cut-off current
VDS =0V;−V
GS =20V −I
GSS max. 1.0 nA
Drain cut-off current
VDS =15V;−V
GS = 10 V IDSX max. 1.0 nA
BSR56 BSR57 BSR58
Drain current
VDS = 15 V; VGS =0 I
DSS >50 20 8 mA
<−100 80 mA
Gate-source breakdown voltage
−IG=1µA; VDS =0 −V
(BR)GSS >40 40 40 V
Gate-source cut-off voltage
ID= 0,5 nA; VDS = 15 V −V(P)GS >4 2 0.8 V
<10 6 4 V
Drain-source voltage (on)
ID= 20 mA; VGS =0 V
DSon <750 −−mV
ID= 10 mA; VGS =0 V
DSon <−500 −mV
ID= 5 mA; VGS =0 V
DSon <−−400 mV
Drain-source resistance (on) at f = 1 kHz
ID= 0; VGS = 0; Ta=25°Cr
ds on <25 40 60 Ω
Feedback capacitance at f = 1 MHz
−VGS = 10 V; VDS =0 C
rss <555pF
April 1991 4
Philips Semiconductors Product specification
N-channel FETs BSR56; BSR57; BSR58
BSR56 BSR57 BSR58
Switching times
VDD = 10 V; VGS =0
Conditions IDand −VGSM
ID=20105mA
−V
GSM =1064V
Delay time td<6 6 10 ns
Rise time tr<3 4 10 ns
Turn-off time toff <25 50 100 ns
Fig.2 Switching times waveforms.
handbook, halfpage
MBK299
tr
td
0
VGSM
Vo
Vi
10%
90%
200 ns
toff
Fig.3 Test circuit.
handbook, halfpage
MBK298
R
T.U.T
50 Ω
Vi
Vo
VDD
Pulse generator
Oscilloscope
BSR56; R = 464 Ω
BSR57; R = 953 Ω
BSR58; R = 1910 Ω
tr=t
f≤1ns
δ= 0.02
Zo=50Ω
t
r≤0.75 ns
Ri≥1MΩ
C
i≤2.5 pF
Fig.4 Power derating curve.
handbook, halfpage
0Tamb (°C)
Ptot
(mW)
300
200
100
040 200
80 120 160
MDA245
April 1991 5
Philips Semiconductors Product specification
N-channel FETs BSR56; BSR57; BSR58
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
April 1991 6
Philips Semiconductors Product specification
N-channel FETs BSR56; BSR57; BSR58
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
