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Page <1> V1.025/02/13
Small Signal Switching Diode
Maximum Ratings and Electrical Characteristics:
Ratings at 25°C ambient temperature unless otherwise specied.
Features:
• Silicon epitaxial planar diode
• High speed switching diode
• 500mW power dissipation
• These diodes are also available in glass case DO-34. Mini-MELF
Mechanical Data:
• Case: DO-35, glass case
• Polarity: Colour band denotes cathode
• Weight: 0.004oz, 0.13g
Characteristics 1N4148-T Units
Reverse voltage VR75 V
Peak reverse voltage VRM 100 V
Average forward rectied current half wave rectication
with resist. load at TA=25°C and f ≥50Hz IAV 150 mA
Forward surge current at t <1s and TJ =25°C IFSM 500 mA
Power dissipation at TA=25°C (Note 1) Ptot 500 mW
Junction temperature TJ175 °C
Storage temperature range TSTG -55 to +175 °C
Note
(1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
Characteristics Min. Typ. Max. Units
Forward voltage at IF=10mA VF- - 1 V
Leakage current
at VR=20V
at VR=75V
at VR=20V TJ =150
IR-
-
-
-
-
-
25
5
50
nA
μA
μA
Capacitance at VF=VR=0V CJ- - 4 pF
Voltage rise when switching on tested with 50mA
pulses tp=0.1μs.
Rise time <30ns. fp=5 to 100kHz
Vfr - - 2.5 V
Reverse recovery time
from IF=10mA to IR=1mA
VR=6V. RL=100Ω
trr - - 4 ns
Thermal resistance junction to ambient (Note 1) RθJA 350 k/W
Rectication efciency at 100MHz, VRF=2V ηv 0.45 - - -
Electrical Characteristics:
Note
(1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
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Page <2> V1.025/02/13
Small Signal Switching Diode
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Page <3> V1.025/02/13
Small Signal Switching Diode
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Part Number Table
Description Part Number
Small Signal Switching Diode 1N4148-T
