NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 FEATURES UE * This product is suitable for medium output power (800 mW) amplification D NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PACKAGE) PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz * MSG (Maximum Stable Gain) = 23 dB TYP., @ VCE = 3.6 V, Ic = 100 mA, f = 460 MHz * Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 20 V * 3-pin power minimold (34 package) Part Number NESG250134-A NESG250134-T1-A O NT IN ORDERING INFORMATION Quantity Supplying Form 25 pcs (Non reel) * 12 mm wide embossed taping 1 kpcs/reel * Pin 2 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (T A = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 9.2 V Emitter to Base Voltage VEBO 2.8 V IC 500 mA 1.5 W SC Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C 2 DI Note Mounted on 34.2 cm 0.8 mm (t) glass epoxy PWB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10422EJ02V0DS (2nd edition) Date Published July 2004 CP(K) The mark shows major revised points. NESG250134 THERMAL RESISTANCE (T A = +25C) Parameter Termal Resistance from Junction to Ratings Unit Rthj-a 80 C/W Note 2 Note Mounted on 34.2 cm 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (T A = +25C) Collector to Emitter Voltage Collector Current Input Power Note Symbol MIN. TYP. MAX. Unit VCE 3.6 4.5 V IC 400 500 mA Pin 12 17 dBm DI SC O NT IN Note Input power under conditions of VCE 4.5 V, f = 460 MHz UE Parameter D Ambient Symbol 2 Data Sheet PU10422EJ02V0DS NESG250134 ELECTRICAL CHARACTERISTICS (T A = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics ICBO VCB = 5 V, IE = 0 mA 1 A Emitter Cut-off Current IEBO 1 A 120 180 10 GHz DC Current Gain hFE VEB = 0.5 V, IC = 0 mA Note 1 VCE = 3 V, IC = 100 mA 80 fT VCE = 3.6 V, IC = 100 mA, f = 460 MHz Gain Bandwidth Product S21e Insertion Power Gain Maximum Satble Gain MSG 2 Note UE RF Characteristics VCE = 3.6 V, IC = 100 mA, f = 460 MHz 19 dB VCE = 3.6 V, IC = 100 mA, f = 460 MHz 23 dB VCE = 3.6 V, IC (set) = 30 mA (RF OFF), 16 19 dB 16 dB 27 29 dBm 29 dBm 60 % 60 % 2 Linner gain (1) GL D Collector Cut-off Current f = 460 MHz, Pin = 0 dBm Linner gain (2) GL VCE = 3.6 V, IC (set) = 30 mA (RF OFF), Output Power (1) O NT IN f = 900 MHz, Pin = 0 dBm Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm Output Power (2) Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm c Collector Efficiency (1) VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm c Collector Efficiency (2) VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. MSG = S21 S12 hFE CLASSIFICATION FB SC Rank SN hFE Value 80 to 180 DI Marking Data Sheet PU10422EJ02V0DS 3 NESG250134 DI SC O NT IN UE D TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified) Remark The graphs indicate nominal characteristics. 4 Data Sheet PU10422EJ02V0DS DI SC O NT IN UE D NESG250134 Remark The graphs indicate nominal characteristics. Data Sheet PU10422EJ02V0DS 5 DI SC O NT IN UE D NESG250134 Remark The graphs indicate nominal characteristics. 6 Data Sheet PU10422EJ02V0DS DI SC O NT IN UE D NESG250134 Remark The graphs indicate nominal characteristics. Data Sheet PU10422EJ02V0DS 7 NESG250134 O NT IN Notes UE D PA EVALUATION BOARD (f = 460 MHz) 1. 38 90 mm, t = 0.8 mm double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. : Through holes DI SC PA EVALUATION CIRCUIT (f = 460 MHz) 8 Data Sheet PU10422EJ02V0DS NESG250134 C1 30 pF Murata C2 6 pF Murata C3, C4 7 pF Murata C5 3 pF Murata C6 0.5 pF Murata C7 5 pF Murata C8 10 pF Murata C9, C10 100 nF Murata L1 100 nH Toko L2 3 nH Toko R1 30 SSM UE Maker O NT IN Value D COMPONENT LIST SC PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS DI Remark The graph indicates nominal characteristics. Data Sheet PU10422EJ02V0DS 9 NESG250134 O NT IN Notes UE D DISTORTION EVALUATION BOARD (f = 460 MHz) 1. 38 90 mm, t = 0.8 mm, double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. : Through holes DI SC DISTORTION EVALUATION CIRCUIT (f = 460 MHz) 10 Data Sheet PU10422EJ02V0DS NESG250134 C1 47 pF Murata C2 12 pF Murata C3, C4 7 pF Murata C5 3 pF Murata C6 6 pF Murata C7 0.5 pF Murata C8 5 pF Murata C9 51 pF Murata C10, C12 100 nF Murata 1 F Murata L1 100 nH Toko L2 15 nH Toko R1 30 SSM C11 UE Maker O NT IN Value D COMPONENT LIST SC DISTORTION EVALUATION CIRCUIT TYPICAL CHARACTERISTICS DI Remark The graph indicates nominal characteristics. Data Sheet PU10422EJ02V0DS 11 NESG250134 PACKAGE DIMENSIONS DI SC O NT IN UE D 3-PIN POWER MINIMOLD (34 PACKAGE) (UNIT: mm) 12 Data Sheet PU10422EJ02V0DS DI SC O NT IN UE D NESG250134 Data Sheet PU10422EJ02V0DS 13 O NT IN SC DI UE D NESG250134 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: CEL: NESG250134-EV09-AZ NESG250134-EVPW04