DATA SH EET
Product data sheet
Supersedes data of 1997 Mar 06
1999 Apr 19
DISCRETE SEMICONDUCTORS
BCW71; BCW72
NPN general purpose transistors
oo
k, halfpage
M3D088
1999 Apr 19 2
NXP Semiconductors Product data sheet
NPN general purpose transistors BCW71; BCW72
FEATURES
•Low current (1 00 mA)
•Low voltage (45 V)
•Low noise.
APPLICATIONS
•General purpose switc hing and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCW69 and BCW70.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE(1)
BCW71 K1∗
BCW72 K2∗
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23 ) and symbo l .
handbook, halfpage
21
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the A b solute Maxi m um Rating Syst em (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter −50 V
VCEO collector-emitter voltage open base; IC = 2 mA −45 V
VEBO emitter-base voltage open collector −5 V
ICcollector current (DC) −100 mA
ICM peak collector current −200 mA
IBM peak base current −200 mA
Ptot total power dissipation Tamb ≤ 25 °C−250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 19 3
NXP Semiconductors Pr oduct data shee t
NPN general purpose transistors BCW71; BCW72
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed- circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 20 V −−100 nA
IE = 0; VCB = 20 V; Tj = 100 °C−−10 μA
IEBO emitter cut-off current IC = 0; VEB = 5 V −−100 μA
hFE DC current gain IC = 10 μA; VCE = 5 V
BCW71 −90 −
BCW72 −150 −
DC current gain IC = 2 mA; VCE = 5 V
BCW71 110 −220
BCW72 200 −450
VCEsat collector-emitter saturation
voltage IC = 10 mA; IB = 0.5 mA −120 250 mV
IC = 50 mA; IB = 2.5 mA −210 −mV
VBEsat base-emitt er saturatio n voltage IC = 10 mA; IB = 0.5 mA −750 −mV
IC = 50 mA; IB = 2.5 mA −850 −mV
VBE base-emitter vo ltage IC = 2 mA; VCE = 5 V 550 −700 mV
Cccollector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz −2.5 −pF
fTtransition frequen c y IC = 10 mA; VCE = 5 V; f = 100 MHz 100 −−MHz
Fnoise figure IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz −−10 dB
1999 Apr 19 4
NXP Semiconductors Pr oduct data shee t
NPN general purpose transistors BCW71; BCW72
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT2
3
1999 Apr 19 5
NXP Semiconductors Pr oduct data shee t
NPN general purpose transistors BCW71; BCW72
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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does not give any representations or warranties,
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Right to make changes ⎯ NXP Semiconductors
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published in this doc ument, including without limitation
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the tech nical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands 115002/00/03/pp6 Date of releas e: 1999 Apr 19 Document orde r number: 9397 750 05694
