1. Product profile
1.1 General description
PNP/PNP double switching transistor in a SOT666 ultra small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features
nDouble general-purpose switching transistor
nBoard-space reduction
nAEC-Q101 qualified
nUltra small and flat lead SMD plastic package
1.3 Applications
nGeneral-purpose switching and amplification
1.4 Quick reference data
PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
Rev. 01 — 20 August 2009 Product data sheet
Table 1. Product overview
Type number Package NPN/NPN
complement NPN/PNP
complement
NXP JEITA
PMBT3906VS SOT666 - PMBT3904VS PMBT3946VPN
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO collector-emitter voltage open base - - −40 V
ICcollector current - - −200 mA
hFE DC current gain VCE =−1V;
IC=−10 mA 100 180 300
PMBT3906VS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 20 August 2009 2 of 11
NXP Semiconductors PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1 123
456
sym018
2
13
5
6
TR1 TR2
4
Table 4. Ordering information
Type number Package
Name Description Version
PMBT3906VS - plastic surface-mounted package; 6 leads SOT666
Table 5. Marking codes
Type number Marking code
PMBT3906VS ZD
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - −40 V
VCEO collector-emitter voltage open base - −40 V
VEBO emitter-base voltage open collector - −6V
ICcollector current - −200 mA
ICM peak collector current single pulse;
tp≤1ms -−200 mA
IBM peak base current single pulse;
tp≤1ms -−100 mA
Ptot total power dissipation Tamb ≤25 °C[1][2] - 240 mW
Per device
Ptot total power dissipation Tamb ≤25 °C[1][2] - 360 mW
PMBT3906VS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 20 August 2009 3 of 11
NXP Semiconductors PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Tjjunction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves SOT666
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Tamb (°C)
−75 17512525 75−25
006aab604
200
100
300
400
Ptot
(mW)
0
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
Rth(j-a) thermal resistance from
junction to ambient in free air [1][2] - - 521 K/W
Rth(j-sp) thermal resistance from
junction to solder point - - 100 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient in free air [1][2] - - 347 K/W
PMBT3906VS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 20 August 2009 4 of 11
NXP Semiconductors PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
7. Characteristics
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab605
10−51010−2
10−4102
10−1tp (s)
10−3103
1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle =
10.75
0.5 0.33
0.2
0.1
0.05 0.02
0.01
0
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
ICBO collector-basecut-off
current VCB =−30 V; IE=0A - - −50 nA
IEBO emitter-base cut-off
current VEB =−6 V; IC=0A - - −50 nA
hFE DC current gain VCE =−1V
IC=−0.1 mA 60 180 -
IC=−1 mA 80 180 -
IC=−10 mA 100 180 300
IC=−50 mA 60 130 -
IC=−100 mA 30 50 -
VCEsat collector-emitter
saturation voltage IC=−10 mA; IB=−1mA - −100 −250 mV
IC=−50 mA; IB=−5mA - −165 −400 mV
VBEsat base-emitter
saturation voltage IC=−10 mA; IB=−1mA - −750 −850 mV
IC=−50 mA; IB=−5mA - −850 −950 mV
tddelay time VCC =−3V;
IC=−10 mA;
IBon =−1 mA;
IBoff =1mA
--35ns
trrise time - - 35 ns
ton turn-on time - - 70 ns
tsstorage time - - 225 ns
tffall time - - 75 ns
toff turn-off time - - 300 ns
PMBT3906VS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 20 August 2009 5 of 11
NXP Semiconductors PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
Cccollector capacitance VCB =−5V;I
E=i
e=0A;
f=1MHz - - 4.5 pF
Ceemitter capacitance VEB =−500 mV;
IC=i
c= 0 A; f = 1 MHz --10pF
fTtransition frequency VCE =−20 V;
IC=−10 mA;
f = 100 MHz
250 - - MHz
NF noise figure VCE =−5V;
IC=−100 µA;RS=1kΩ;
f = 10 Hz to 15.7 kHz
--4dB
Table 8. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VCE =−1V
(1) Tamb = 150 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Tamb =25°C
Fig 3. Per transistor:
DC current gain as a function of collector
current; typical values
Fig 4. Per transistor:
Collector current as a function of
collector-emitter voltage; typical values
006aab120
200
100
300
400
hFE
0
IC (mA)
−10−1−103
−102
−1−10
(1)
(2)
(3)
VCE (V)
0−10−8−4−6−2
006aab121
−0.1
−0.2
−0.3
IC
(A)
0
IB (mA) = −5.0
−4.5
−4.0
−3.5
−3.0
−0.5
−1.0
−2.5
−1.5
−2.0
PMBT3906VS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 20 August 2009 6 of 11
NXP Semiconductors PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
VCE =−1V
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 150 °C
IC/IB=10
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 150 °C
Fig 5. Per transistor:
Base-emitter voltage as a function of collector
current; typical values
Fig 6. Per transistor:
Base-emitter saturation voltage as a function
of collector current; typical values
IC/IB=10
(1) Tamb = 150 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Fig 7. Per transistor: Collector-emitter saturation voltage as a function of collector current; typical values
006aab123
−0.6
−0.8
−0.4
−1.0
−1.2
VBE
(V)
−0.2
IC (mA)
−10−1−103
−102
−1−10
(1)
(2)
(3)
006aab124
−0.6
−0.8
−0.4
−1.0
−1.2
VBEsat
(V)
−0.2
IC (mA)
−10−1−103
−102
−1−10
(1)
(2)
(3)
006aab122
IC (mA)
−10−1−103
−102
−1−10
−10−1
−1
VCEsat
(V)
−10−2
(1)
(2)
(3)
PMBT3906VS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 20 August 2009 7 of 11
NXP Semiconductors PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
9. Package outline
VI= 5 V; t = 600 µs; tp=10µs; tr=t
f≤3ns
R1 = 56 Ω; R2 = 2.5 kΩ; RB= 3.9 kΩ; RC= 270 Ω
VBB = 1.9 V; VCC =−3V
Oscilloscope: input impedance Zi=50Ω
Fig 8. Test circuit for switching times
RC
R2
R1
DUT
mgd624
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
VBB
VI
VCC
Fig 9. Package outline SOT666
Dimensions in mm 04-11-08
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.27
0.17
0.5
pin 1 index
123
456
0.6
0.5
0.3
0.1
PMBT3906VS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 20 August 2009 8 of 11
NXP Semiconductors PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
4000 8000
PMBT3906VS SOT666 2 mm pitch, 8 mm tape and reel - -315
4 mm pitch, 8 mm tape and reel -115 -
Fig 10. Reflow soldering footprint SOT666
solder lands
placement area
occupied area
solder paste
sot666_fr
2.75
2.45
2.1
1.6
0.4
(6×)
0.55
(2×)
0.25
(2×)
0.6
(2×)
0.65
(2×)
0.3
(2×)
0.325
(4×)
0.45
(4×)
0.5
(4×)
0.375
(4×)
1.72
1.7
1.0750.538
Dimensions in mm
PMBT3906VS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 20 August 2009 9 of 11
NXP Semiconductors PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PMBT3906VS_1 20090820 Product data sheet - -
PMBT3906VS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 20 August 2009 10 of 11
NXP Semiconductors PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PMBT3906VS
40 V, 200 mA PNP/PNP switching transistor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 August 2009
Document identifier: PMBT3906VS_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Contact information. . . . . . . . . . . . . . . . . . . . . 10
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
