This is information on a product in full production.
August 2014 DocID026826 Rev 1 1/20
20
STGFW20H65FB, STGW20H65FB,
STGWT20H65FB
Trench gate field-stop IGBT, HB series
650 V, 20 A high speed
Datasheet
-
production da ta
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•High speed switching series
•Minimized tail current
•V
CE(sat)
= 1.55 V (typ.) @ I
C
= 20 A
•Tight parameters distribution
•Safe paralleling
•Low thermal resistance
•Lead free package
Applications
•Photovoltaic inverters
•High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate and field-stop
structure. The device is part of the new HB series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequenc y co nv erter. Furthermore, a slightly
positive V
CE(sat)
temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
TO-247
1
23
TO-3P
123
TAB
1
111
23
TO-3PF
C (2, TAB)
E (3)
G (1)
Table 1. Device summary
Order codes Marking Package Packaging
STGFW20H65FB GFW20H65FB TO-3PF Tube
STGW20H65FB GW20H65FB TO-247 Tube
STGWT20H65FB GWT20H65FB TO-3P Tube
www.st.com
Contents STGFW20H65FB, STGW20H65FB, STGWT20H65FB
2/20 DocID026826 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.1 TO-3PF, STGFW20H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2 T O-247, STGW20H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.3 T O-3P, STGWT20H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
DocID026826 Rev 1 3/20
STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value Unit
TO-247
TO-3P TO-3PFP
V
CES
Collector-emitter voltage (V
GE
= 0) 650 V
I
C
Continuous collector current at T
C
= 25 °C 40 A
I
C
Continuous collector current at T
C
= 100 °C 20 A
I
CP(1)
1. Pulse width limited by maximum junction temperature.
Pulsed collector current 80 A
V
GE
Gate-emitter voltage ±2 0 V
P
TOT
Total dissipation at T
C
= 25 °C 168 52 W
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-3PF TO-247
TO-3P
R
thJC
Thermal resistance junction-case 2.9 0.9 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGFW20H65FB, STGW20H65FB, STGWT20H65FB
4/20 DocID026826 Rev 1
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0) I
C
= 2 mA 650 V
V
CE(sat)
Collect or-emitter sat uration
voltage
V
GE
= 15 V, I
C
= 20 A 1.55 2
V
V
GE
= 15 V, I
C
= 20 A
T
J
= 125 °C 1.65
V
GE
= 15 V, I
C
= 20 A
T
J
= 175 °C 1.75
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 650 V 25 µA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input cap ac itance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-2764- pF
C
oes
Output capacitance - 80 - pF
C
res
Reverse transfer
capacitance -60-pF
Q
g
Total gate charge V
CC
= 520 V, I
C
= 20 A,
V
GE
= 15 V, see Figure 27
-120-nC
Q
ge
Gate-emitter charge - 20 - nC
Q
gc
Gate- collector charge - 50 - nC
DocID026826 Rev 1 5/20
STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 20 A,
R
G
= 10 Ω, V
GE
= 15 V,
see Figure 26
-30-ns
t
r
Current rise time - 11 - ns
(di/dt)
on
Turn-on current slope - 14 00 - A/µs
t
d(off)
Turn-off delay time 139 - ns
t
f
Current fall time - 20 - ns
E
on(1)
1. Energy losses include reverse recovery of the external diode. Turn-on times and energy have been
measured applying as freewheeling an external SiC diode STPSC206W
Turn-on switching losses - 77 - µJ
E
off(2)
2. Turn-off losses include also the tail of the collector current.
Turn-off switching losses - 170 - µ J
E
ts
Total switching losse s - 247 - µJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 20 A,
R
G
= 10 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 26
-29-ns
t
r
Current rise time - 12 - ns
(di/dt)
on
Turn-on current slope - 1352 - A/µs
t
d(off)
Tu rn-off delay time - 147 - ns
t
f
Current fall time - 38 - ns
E
on(1)
Turn-on switching losses - 88 - µJ
E
off(2)
Turn-off switching losses - 353 - µ J
E
ts
Total switching losse s - 441 - µJ
Electrical characteristics STGFW20H65FB, STGW20H65FB, STGWT20H65FB
6/20 DocID026826 Rev 1
2.1 Electrical characteristics (curve)
Figure 2. Output characteristics (T
J
= 25°C) Figure 3. Output characteristics (T
J
= 175°C)
I
C
30
20
10
0
02V
CE
(V)
4
(A)
13
40
50
11V
V
GE
=15 V
9V
13V
7V
60
70
GIPG260820141108FSR
I
C
30
20
10
0
02V
CE
(V)
4
(A)
13
40
50
11V
V
GE
=15 V
9V
13V
7V
60
80
GIPG260820141120FSR
Figure 4. T ransfer characteristics Figure 5. Collector current vs. case temperature
for TO-247 and TO-3P
Figure 6. Collector current vs. case temperature
for TO-3PF Figure 7. V
CE(sat)
vs. junction temperature
I
C
60
40
20
10
79V
GE
(V)
(A)
810
70
30
V
CE
=10 V
25 °C
175 °C
50
GIPG260820141127FSR
I
C
30
20
10
0
050 T
C
(°C)
75
(A)
25 100 125 150
V
GE
≥ 15V, T
J
≤ 175 °C
40
GIPG260820141136FSR
I
C
20
15
10
0
050 T
C
(°C)
75
(A)
25 100 125 150
V
GE
≥ 15V, T
J
≤ 175 °C
25
5
GIPG260820141147FSR
V
CE(sat)
1.8
1.6
1.4
1.2
-50 0 T
J
(°C)
(V)
50 100 150
2.2
2.0
V
GE
= 15V
I
C
= 40A
I
C
= 20A
I
C
= 10A
GIPG260820141153FSR
DocID026826 Rev 1 7/20
STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics
Figure 8. Power dissipation vs. case
temperature for TO-247 and TO-3P Figure 9. Power dissipation vs. case
temperature for TO-3PF
P
tot
60
40
0
050 T
C
(°C)
75
(W)
25 100 125 150
20
80
175
100
V
GE
≥ 15V, T
J
≤ 175 °C
120
140
160
GIPG280120141359FSR
P
tot
20
0
050 T
C
(°C)
75
(W)
25 100 125 150
10
175
30
V
GE
≥ 15V, T
J
≤ 175 °C
40
50
GIPG260820141204FSR
Figure 10. Forward bias safe opera ting area for
TO-247 and TO-3P Figure 11. Forward bias safe operating area for
TO-3PF
I
C
10
1
0.11V
CE
(V)
(A)
10 100
10 µs
100 µs
1 ms
(single pulse T
C
= 25°C,
T
J
≤ 175°C; V
GE
=15V)
GIPG260820141333FSR
I
C
10
1
0.11V
CE
(V)
(A)
10 100
10 µs
100 µs
1 ms
(single pulse T
C
= 25°C,
T
J
≤ 175°C; V
GE
=15V)
GIPG260820141339FSR
Figure 12. C ollector current vs. switching
frequency for TO-247 and TO-3P Figure 13. Collecto r curr ent vs. switch ing
frequency for TO-3PF
0
10
20
30
40
110
Ic [A]
f [kHz]
G
Ω
rectangular current shape,
(duty cycle=0.5, V
CC
= 400V, R =4.7
,
V
GE
= 0/15 V, T
J
=175°C)
Tc=80°C
Tc=100 °C
50
60
GIPG260820141342FSR
0
5
10
15
110
Ic [A]
f [kHz]
G
Ω
rectangular current shape,
(duty cycle=0.5, V
CC
= 400V, R =4.7
,
V
GE
= 0/15 V, T
J
=175°C)
Tc=80°C
Tc=100 °C
20
GIPG260820141347FSR
Electrical characteristics STGFW20H65FB, STGW20H65FB, STGWT20H65FB
8/20 DocID026826 Rev 1
Figure 14. Normalized V
GE(th)
vs. junction
temperature Fig ure 15. Normali ze d V
(BR)CES
vs. junction
temperature
V
GE(th)
(norm)
0.8
0.7
0.6
-50 T
J
(°C)
0 50 100 150
0.9
1.0
V
CE
= V
GE
I
C
= 1mA
AM16060v1
V
(BR)CES
(norm)
1.1
1.0
0.9
-50 T
J
(°C)
0 50 100 150
I
C
= 1mA
AM16059v1
Figure 16. Switching losses vs temperature Figure 17. Switching losses vs gate resistance
E (µJ)
250
150
50
20 T
J
(°C)
40 60 80 100
350
V
CC
= 400V, V
GE
= 15V
R
g
= 10Ω, I
C
= 20A
120
E
ON
E
OFF
140 160
GIPG260820141404FSR
E (µJ)
250
503R
G
(Ω)
10 17 24
350
V
CC
= 400V, V
GE
= 15V
I
C
= 20A, T
J
= 175 °C
31
E
ON
E
OFF
38 45
150
450
550
GIPG260820141408FSR
Figure 18. Switching losses vs collector current Figu re 19. Swit ching l osses vs col lect or emi tter
voltage
E (µJ)
400
200
0
0I
C
(A)
10 20 30 40
600
V
CC
= 400V, V
GE
= 15V
R
g
= 10Ω, T
J
= 175°C)
E
ON
E
OFF
GIPG260820141358FSR
E (µJ)
200
100
0
150 V
CE
(V)
250 350 450
300
T
J
= 175°C, V
GE
= 15V
R
g
= 10Ω, I
C
= 20A
E
ON
E
OFF
400
GIPG260820141413FSR
DocID026826 Rev 1 9/20
STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics
Figure 20. Switching times vs collector current Figure 21. Switching times vs gate resistance
t(ns)
100
10
1
0I
C
(A)
20 30 40
T
J
= 175°C, V
GE
= 15V
R
g
= 10Ω, V
CC
= 400V
t
f
t
doff
t
don
t
r
10
GIPG260820141417FSR
t(ns)
100
100R
g
(Ω)
10 20
T
J
= 175°C, V
GE
= 15V
I
C
= 20A, V
CC
= 400V
t
f
t
doff
30
t
don
t
r
40
10
GIPG260820141422FSR
Figure 22. Capacitance variations Figure 23. Gate charge vs. gate-emitter voltage
C(pF)
1000
100
10
0.1 V
CE
(V)
110
10000
C
ies
C
oes
C
res
GIPG260820141434FSR
V
GE
(V)
4
2
00Q
g
(nC)
40 80 120
6
8
10
12
14
V
CC
= 520V, I
C
= 20A
I
G
= 1mA
16
GIPG260820141445FSR
Electrical characteristics STGFW20H65FB, STGW20H65FB, STGWT20H65FB
10/20 DocID026826 Rev 1
Figure 24. Thermal impedance for TO-247 and TO-3P
10
-5
10
-4
10
-3
10
-2
10
-1 t
p
(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
DocID026826 Rev 1 11/20
STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics
Figure 25. Thermal impedance for TO-3PF
10
-5
10
-4
10
-3
t
p
(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/t
tp
t
Single pulse
δ=0.5
10
-2
10
-1
10
0
ZthTOF3T_A
Test circuits STGFW20H65FB, STGW20H65FB, STGWT20H65FB
12/20 DocID026826 Rev 1
3 Test circuits
Figure 26. Test circuit for inductive load
switching Figure 27. Gate charge test circuit
Figure 28. Switching waveform
AM01505v1
DocID026826 Rev 1 13/20
STGFW20H65FB, STGW20H65FB, STGWT20H65FB Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST tradema rk .
4.1 TO-3PF, STGFW20H65FB
Figure 29. TO-3PF drawing
7627132_D
Package mechanical data STGFW20H65FB, STGW20H65FB, STGWT20H65FB
14/20 DocID026826 Rev 1
Table 7. TO-3PF mechanical data
Dim. mm
Min. Typ. Max.
A5.30 5.70
C2.80 3.20
D3.10 3.50
D1 1.80 2.20
E0.80 1.10
F0.65 0.95
F2 1.80 2.20
G10.30 11.50
G1 5.45
H 15.30 15.70
L 9.80 10 10.20
L2 22.80 23.20
L3 26.30 26.70
L4 43.20 44.40
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15
N1.80 2.20
R3.80 4.20
Dia 3.40 3.80
DocID026826 Rev 1 15/20
STGFW20H65FB, STGW20H65FB, STGWT20H65FB Package mechanical data
4.2 TO-247, STGW20H65FB
Figure 30. TO-2 47 drawing
0075325_G
Package mechanical data STGFW20H65FB, STGW20H65FB, STGWT20H65FB
16/20 DocID026826 Rev 1
Table 8. TO-247 m echanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
DocID026826 Rev 1 17/20
STGFW20H65FB, STGW20H65FB, STGWT20H65FB Package mechanical data
4.3 TO-3P, STGWT20H65FB
Figure 31. TO-3P drawin g
8045950_B
Package mechanical data STGFW20H65FB, STGW20H65FB, STGWT20H65FB
18/20 DocID026826 Rev 1
Tab l e 9. TO-3P mechanical data
Dim. mm
Min. Typ. Max.
A 4.60 4.80 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1.00 1.20
b1 1.80 2.00 2.20
b2 2.80 3.00 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.70 13.90 14.10
E 15.40 15.60 15.80
E1 13.40 13.60 13.80
E2 9.40 9.60 9.90
e 5.15 5.45 5.75
L 19.80 20 20.20
L1 3.30 3.50 3.70
L2 18.20 18.40 18.60
øP 3.30 3.40 3.50
øP1 3.10 3.20 3.30
Q 4.80 5 5.20
Q1 3.60 3.80 4
DocID026826 Rev 1 19/20
STGFW20H65FB, STGW20H65FB, STGWT20H65FB Revision history
5 Revision history
Table 10. Document revision history
Date Revision Changes
28-Aug-2014 1 Initial release.
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
20/20 DocID026826 Rev 1
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