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Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
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contained therein.
2SK2940(L),2SK2940(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-563B (Z)
3rd. Edition
Jul. 1998
Features
• Low on-resistance
RDS =0.010 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
123
4
123
4
LDPAK
G
D
S
2SK2940(L),2SK2940(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID45 A
Drain peak current ID(pulse)Note1 180 A
Body-drain diode reverse drain current IDR 45 A
Avalanche current IAP Note3 45 A
Avalanche energy EAR Note3 173 mJ
Channel dissipation Pch Note2 75 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50Ω
2SK2940(L),2SK2940(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 60——V I
D = 10mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100µA, VDS = 0
Gate to source leak current IGSS — — ±10 µAV
GS = ±16V, VDS = 0
Zero gate voltege drain current IDSS ——10µAV
DS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V ID = 1mA, VDS = 10V
Static drain to source on state RDS(on) — 0.010 0.013 ΩID = 20A, VGS = 10VNote4
resistance RDS(on) — 0.015 0.025 ΩID = 20A, VGS = 4V Note4
Forward transfer admittance |yfs|2440—S I
D = 20A, VDS = 10V Note4
Input capacitance Ciss — 2200 — pF VDS = 10V
Output capacitance Coss — 1050 — pF VGS = 0
Reverse transfer capacitance Crss — 320 — pF f = 1MHz
Turn-on delay time td(on) — 25 — ns ID = 20A, VGS = 10V
Rise time tr— 200 — ns RL = 1.5Ω
Turn-off delay time td(off) — 320 — ns
Fall time tf— 240 — ns
Body–drain diode forward voltage VDF — 0.95 — V IF = 45A, VGS = 0
Body–drain diode reverse
recovery time trr — 60 — ns IF = 45A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
2SK2940(L),2SK2940(S)
4
Main Characteristics
100
75
50
25
050 100 150 200
50
40
30
20
10
0
10 V
246810
6 V 50
40
30
20
10
012345
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
V = 10 V
Pulse Test
DS
0.1 0.3 1 310 30 100
1000
300
100
30
10
3
1
0.3
0.1
DC Operation (Tc = 25°C)
Ta = 25 °C
10 µs
100 µs
1 ms
PW = 10 ms (1shot)
Operation in
this area is
limited by R
DS(on)
3.5 V
4 V
5 V
3 V
V = 2.5 V
GS
Tc = 75°C 25°C
–25°C
Pulse Test
2SK2940(L),2SK2940(S)
5
0.5
0.4
0.3
0.2
0.1
048
12 16 20
40
32
24
16
8
–40 0 40 80 120 160
0
V = 4 V
GS
10 V
5, 10, 20 A
0.1 0.3 1 3 10 30 100
500
100
200
20
50
10
2
5
1
0.5
25 °C
Tc = –25 °C
75 °C
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
V = 10 V
Pulse Test
DS
Drain to Source On State Resistance
R (m )
Ω
DS(on)
I = 20 A
D
10 A
5 A
1 5 20 10021050
100
20
1
5
2
10
50
V = 4 V
GS
10 V
Pulse Test
R (m )
Ω
DS(on)
I = 20 A
D
10 A 5 A
2SK2940(L),2SK2940(S)
6
0.1 0.3 1 3 10 30 100 01020304050
10000
2000
5000
1000
100
200
500
100
80
60
40
20
0
20
16
12
8
4
40 80 120 160 200
00.1 0.2 1 2 10 20 100
I = 45 A
D
V
GS
V
DS
V = 50 V
25 V
10 V
DD
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
100
20
50
10
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS 50
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
V = 10 V
25 V
50 V
DD
1000
200
500
100
20
10
50
0.5 5 50
V = 10 V, V = 30 V
PW = 10 µs, duty < 1 %
GS DD
tf
r
t
d(on)
t
d(off)
t
2SK2940(L),2SK2940(S)
7
50
40
30
20
10
00.4 0.8 1.2 1.6 2.0
200
160
120
80
40
25 50 75 100 125 150
0
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E (mJ)
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50Ω
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = • L • I •
2
1V
V – V
AR AP DSS
DSS DD
2
Avalanche Test Circuit Avalanche Waveform
V = 0, –5 V
GS
10 V
5 V
I = 45 A
V = 25 V
duty < 0.1 %
Rg > 50
AP
DD
Ω
2SK2940(L),2SK2940(S)
8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50Ω
90%
10%
t
f
Switching Time Test Circuit Waveform
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
γ
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 1.67 °C/W, Tc = 25 °C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
2SK2940(L),2SK2940(S)
9
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (L)
—
—
1.4 g
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.59 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.27 ± 0.2
As of January, 2001
Unit: mm
2SK2940(L),2SK2940(S)
10
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(1)
—
—
1.3 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.15
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
3.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK2940(L),2SK2940(S)
11
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(2)
—
—
1.35 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.2
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
5.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK2940(L),2SK2940(S)
12
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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