© 2006 IXYS All rights reserved 1 - 2
G
0610
VWO 35
IXYS reserves the right to change limits, test conditions and dimensions.
VRSM VRRM Type
VDSM VDRM
VV
900 800 VWO 35-08ho7
1300 1200 VWO 35-12ho7
IRMS = 3x 35 A
VRRM = 800-1200 V
Features
•Thyristor controller for AC (circuit
W3C acc. to IEC) for mains frequency
•Soldering connections for PCB
mounting
•Isolation voltage 3000 V~
•Planar passivated chips
Applications
•Switching and control of three phase
AC circuits
•Softstart AC motor controller
•Solid state switches
•Light and temperature control
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and power
cycling
Data according to IEC 60747 refer to a single thyristor/diode unless otherwise stated.
AC Controller Modules
Symbol Conditions Maximum Ratings
IRMS TC = 85°C, (per phase) 35 A
ITAVM TC = 85°C; (180° sine ; per thyristor) 16 A
ITSM TVJ = 45°C t = 10 ms (50 Hz), sine 200 A
VR = 0 t = 8.3 ms (60 Hz), sine 210 A
TVJ = TVJM t = 10 ms (50 Hz), sine 180 A
VR = 0 t = 8.3 ms (60 Hz), sine 190 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 150 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 160 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 150 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 20 A 100 A/µs
f = 50 Hz, tP = 200 µs
VD = 2/3 VDRM
IG = 0.15 A non repetitive, IT = ITAVM 500 A/µs
diG/dt = 0.15 A/µs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 500 V/µs
RGK = ∞; method 1 (linear voltage rise)
VRGM 10 V
PGM TVJ = TVJM tp = 30 µs ≤ 5W
IT = ITAVM tp = 300 µs ≤ 2.5 W
PGAVM 0.5 W
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque (M4) 1.5 - 2 Nm
Weight typ. 18 g
Preliminary data
HA JC MF
IB LE NG
© 2006 IXYS All rights reserved 2 - 2
G
0610
VWO 35
IXYS reserves the right to change limits, test conditions and dimensions.
Dimensions in mm (1 mm = 0.0394")
Symbol Conditions Characteristic Values
ID, IRTVJ = TVJM; VR = VRRM; VD = VDRM <5mA
VTIT= 20 A; TVJ = 25°C < 1.6 V
VT0 For power-loss calculations only 0.85 V
rT27 mΩ
VGT VD = 6 V TVJ = 25°C < 1.5 V
TVJ = -40°C < 2.5 V
IGT VD = 6 V TVJ = 25°C <25mA
TVJ = -40°C <50mA
VGD TVJ = TVJM; VD = 2/3 VDRM < 0.2 V
IGD <3mA
ILTVJ = 25°C; tP = 10 µs <75mA
IG = 0.1 A; diG/dt = 0.1 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = ∞ <50mA
tgd TVJ = 25°C; VD = ½ VDRM <2µs
IG = 0.1 A; diG/dt = 0.1 A/µs
RthJC per thyristor; DC 1.3 K/W
per module 0.22 K/W
RthJK per thyristor; DC 1.8 K/W
per module 0.3 K/W
dSCreeping distance on surface 11.2 mm
dACreepage distance in air 5.0 mm
aMax. allowable acceleration 50 m/s2
