DATA SHEET NEC / SILICON TRANSISTORS / 2SD1006,2SD1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SD1006 and 2SD1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. f | FEATURES PACKAGE DIMENSIONS @ World Standard Miniature Package : SOT ~89 in millimeters High Collector to Emitter Voltage : Vceq > 120 V (25D 1007) : Vceo > 100 V (25D 1006} 4540.1 Complement to PNP type 2SB805 and 2SB806 respectively. | | ox nas m4 ABSOLUTE MAXIMUM RATINGS | | i + | Maximum Vattages and Currents (Tg = 25C) 28D1006 2SD1007 i aT Collector to Base Voltage Vcso 100 120 v gi 6 : Collector to Emitter Voltage Vcea 100 120 Vv ei eke) sg " 3 Emitter to Base Voltage Veso 5.0 Vv Few SL Collector Current (DC) le 07 A | 2.420.067 Li gpl + | Collector Current (Pulse) * le 1.2 A ' 5.06 Hie Maximum Power Dissipation - 0.415888 Total Power Dissipation \ at 25 C Ambient Temperature** Py 2.0 Ww 1. Emitter Maximum Temperatures 2 Collector Junction Temperature T; 150 c i 3. Base SOT-89 Storage Temperature Range T5tq ~$5 to +150 C __ *PW 310 ms, duty cycle $50 % **When mounted on ceramic substrate of 16 cm? x 0.7 mm ELECTRICAL CHARACTERISTICS (Tg = 25 C) CHARACTERISTIC SYMBOL MIN, TYP. | MAX. UNIT | TEST CONDITIONS i; 100 nA 2801006 Vop= 100 V, Ie=0 Collector Cutoff Current {cpa ~ 100 nA 2801007 Vep=120 V, le =0 Emitter Cutoff Current jEBoO 400 nA Veg=5.0V, ic=0 DC Current Gain heet i 48 200 Veet10V,ic=5.0mA veel OC Current Gain hee 90 200 400 Voet1.0V, Ic=100 mA oy Callector Saturation Voltage VCE (sat) 0.3 0.6 v S00 mA, Ig =50 mA se | Bese Saturation Voltage Veen) os | 15 v 1=500 mA, 1p=50 mA see l Base to Emitter Voltage Vee 60} 620 | 650 mv Voe=10 V, Ic 10 mA at Gain Bandwidth Product it 90 Miz Veg=10 V, E210 mA Output Capacitance Cob i 410 - pF Vog=10 V, ib 0, f= 1.0 MHz ***Pulsed: PW =350 us, duty cycle 32 % hee Classification MARKING L 2801006 HM av HK | | 28D1007 HR HO up| hee 90 180 135 270 200 400 Document Na. TC--13698 (0.0.No. TG--5477A) Date Published November 1994 M. Printed in Japan NEC Corporation 1982 389NEC 2SD1006,2SD1007 TYPICAL CHARACTERISTICS (T, = 25 C) TOTAL POWER DISSIPATION vs COLLECTOR CURRENT vs. AMBIENT TEMPERATURE COLLECTOR TO EMITTER VOLTAGE 0.7 mm x 16 cm* Mounted on Ceramic Substrate A 50 yA Pr--Totol Power Dissipation -W ig - Collector Current--mA 9 50 100 150 200 250 0 Ta~Ambient Temperture -C 9 91 2 93 a4 os YcoeCollector ta Emitter Voltage-- COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE VoesiOV 90 Pulsed 80 < =) 70 & i 2 S 2 2 5 3 S100 o - 5 gS 50 3 a & 3 20 8 S10 LQ 5 2 HA 1 oO 62 04 06 08 10 #12 #14 16 0 40 Bo 12 16 20 Vage~ Base to Emitter Voltage -V VcogeCollector to Emitter Voltage~ OC CURRENT GAIN vs. COLLECTOR SATURATION VOLTAGE COLLECTOR CURRENT va. COLLECTOR CURRENT ig-= 10-Ip Pulsed hee OC Current Gain VCE(sat}~ Collector Saturation Voltage V 1 2 5 10 26 50 100 200 5001000 2000 L 2 5 16 20 50 100 200 500 1900 Ig Collector Current mA iCollectar CurrentmA 390tage-V ' Vee(sat) ~ Base Saturation Vo Cop Output Capacitance pF 50 6 ow nN BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT $ 19 20 5G 100 200 \--Collector Current--mA OUTPUT CAPACITANCE vs. REVERSE VOLTAGE Ip=0 500 1000 f=1.0 MHz 2 10 20 50 Vog-Collecter to Base Voltage--V 100 fp~-Gain Bandwidth Product -MHz 2$D1006,2$D1007 GAIN BANDWIDTH PRODUCT ve EMITTER CURRENT ~2 5 10 2c ~56 - 100 ig ~ Emitter CurrentmA 351