TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 - JULY 1995 D D D D D D D Low rDS(on) . . . 5 Typical Avalanche Energy . . . 30 mJ Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current 500-mA Typical Current-Limiting Capability Output Clamp Voltage . . . 50 V Devices Are Cascadable Low Power Consumption DW OR N PACKAGE (TOP VIEW) NC VCC SER IN DRAIN0 DRAIN1 DRAIN2 DRAIN3 SRCLR G GND description The TPIC6B595 is a monolithic, high-voltage, medium-current power 8-bit shift register designed for use in systems that require relatively high load power. The device contains a built-in voltage clamp on the outputs for inductive transient protection. Power driver applications include relays, solenoids, and other mediumcurrent or high-voltage loads. This device contains an 8-bit serial-in, parallel-out shift register that feeds an 8-bit D-type storage register. Data transfers through both the shift and storage registers on the rising edge of the shift-register clock (SRCK) and the register clock (RCK), respectively. The storage register transfers data to the output buffer when shiftregister clear (SRCLR) is high. When SRCLR is low, the input shift register is cleared. When output enable (G) is held high, all data in the output buffers is held low and all drain outputs are off. When G is held low, data from the storage register is transparent to the output buffers. When data in the output buffers is low, the DMOS-transistor outputs are off. When data is high, the DMOStransistor outputs have sink-current capability. The serial output (SER OUT) allows for cascading of the data from the shift register to additional devices. 1 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 NC GND SER OUT DRAIN7 DRAIN6 DRAIN5 DRAIN4 SRCK RCK GND NC - No internal connection logic symbol G RCK SRCLR SRCK SER IN 9 EN3 12 8 13 3 C2 R SRG8 C1 1D 2 4 5 6 7 14 15 16 17 2 18 DRAIN0 DRAIN1 DRAIN2 DRAIN3 DRAIN4 DRAIN5 DRAIN6 DRAIN7 SER OUT This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. Outputs are low-side, open-drain DMOS transistors with output ratings of 50 V and 150-mA continuous sinkcurrent capability. Each output provides a 500-mA typical current limit at TC = 25C. The current limit decreases as the junction temperature increases for additional device protection. The TPIC6B595 is characterized for operation over the operating case temperature range of - 40C to 125C. Copyright 1995, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 1 TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 - JULY 1995 logic diagram (positive logic) G RCK SRCLR 9 12 4 D SRCK 13 D C2 C1 CLR SER IN 5 3 D DRAIN1 D C2 C1 CLR 6 D DRAIN2 D C2 C1 7 CLR D DRAIN3 D C2 C1 CLR 14 DRAIN4 D C2 D C1 CLR 15 D DRAIN5 D C2 C1 16 CLR D DRAIN6 D C2 C1 17 CLR D DRAIN7 D C2 C1 CLR 10, 11, 19 18 2 DRAIN0 8 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 SER OUT GND TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 - JULY 1995 schematic of inputs and outputs EQUIVALENT OF EACH INPUT TYPICAL OF ALL DRAIN OUTPUTS VCC DRAIN 50 V Input 25 V 20 V 12 V GND GND absolute maximum ratings over recommended operating case temperature range (unless otherwise noted) Logic supply voltage, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Logic input voltage range, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.3 V to 7 V Power DMOS drain-to-source voltage, VDS (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Continuous source-to-drain diode anode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Pulsed source-to-drain diode anode current (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A Pulsed drain current, each output, all outputs on, ID, TC = 25C (see Note 3) . . . . . . . . . . . . . . . . . . . 500 mA Continuous drain current, each output, all outputs on, ID, TC = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mA Peak drain current single output, IDM,TC = 25C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Single-pulse avalanche energy, EAS (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mJ Avalanche current, IAS (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 40C to 150C Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 40C to 125C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 65C to 150C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values are with respect to GND. 2. Each power DMOS source is internally connected to GND. 3. Pulse duration 100 s and duty cycle 2%. 4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25C, L = 200 mH, IAS = 0.5 A (see Figure 4). DISSIPATION RATING TABLE PACKAGE TC 25C POWER RATING DW N DERATING FACTOR ABOVE TC = 25C TC = 125C POWER RATING 1389 mW 11.1 mW/C 278 mW 1050 mW 10.5 mW/C 263 mW POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 3 TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 - JULY 1995 recommended operating conditions Logic supply voltage, VCC High-level input voltage, VIH MIN MAX 4.5 5.5 UNIT V 0.85 VCC Low-level input voltage, VIL Pulsed drain output current, TC = 25C, VCC = 5 V (see Notes 3 and 5) V 0.15 VCC V 500 mA - 500 Setup time, SER IN high before SRCK, tsu (see Figure 2) 20 ns Hold time, SER IN high after SRCK, th (see Figure 2) 20 ns Pulse duration, tw (see Figure 2) 40 Operating case temperature, TC - 40 ns C 125 electrical characteristics, VCC = 5 V, TC = 25C (unless otherwise noted) PARAMETER TEST CONDITIONS V(BR)DSX Drain-to-source breakdown voltage ID = 1 mA VSD Source-to-drain diode forward voltage IF = 100 mA VOH High-level g output voltage, g , SER OUT VOL Low-level output voltage, g , SER OUT IIH IIL MAX IOH = - 20 A, VCC = 4.5 V IOH = - 4 mA, VCC = 4.5 V IOL = 20 A, VCC = 4.5 V High-level input current IOL = 4 mA, VCC = 5.5 V, VCC = 4.5 V VI = VCC Low-level input current VCC = 5.5 V, VI = 0 VCC = 5 5.5 5V ICC(FRQ) Logic supply current at frequency fSRCK = 5 MHz,CL = 30 pF, All outputs off, IN Nominal current IDSX Off state drain current Off-state rDS(on) Static drain-source on-state resistance VDS(on) = 0.5 V, IN = ID, TC = 85C VDS = 40 V, VCC = 5.5 V 4.4 4.49 4 4.2 1 0.005 0.1 0.3 0.5 A -1 A 100 All outputs on 150 300 0.4 5 VDS = 40 V, ID = 100 mA, VCC = 5.5 V, TC = 125C VCC = 4.5 V ID = 100 mA, VCC = 4.5 V ID = 350 mA, TC = 125C, See Notes 5 and 6 and Figures 7 and 8 V 1 20 See Notes 5, 6, and 7 V V All outputs off See Figures 2 and 6 UNIT V 0.85 Logic supply current 4 TYP 50 ICC NOTES: 3. 5. 6. 7. MIN 90 A mA mA 0.1 5 0.15 8 4.2 5.7 6.8 9.5 A VCC = 4.5 V 5.5 8 Pulse duration 100 s and duty cycle 2%. Technique should limit TJ - TC to 10C maximum. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a voltage drop of 0.5 V at TC = 85C. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 - JULY 1995 switching characteristics, VCC = 5 V, TC = 25C PARAMETER TEST CONDITIONS tPLH tPHL Propagation delay time, low-to-high-level output from G tr tf Rise time, drain output ta trr Reverse-recovery-current rise time Propagation delay time, high-to-low-level output from G MIN TYP CL = 30 pF,, ID = 100 mA,, See Figures 1, 2, and 9 Fall time, drain output , IF = 100 mA,, di/dt = 20 A/s, See Notes 5 and 6 and Figure 3 Reverse-recovery time MAX UNIT 150 ns 90 ns 200 ns 200 ns 100 ns 300 NOTES: 5. Technique should limit TJ - TC to 10C maximum. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. thermal resistance PARAMETER RJA TEST CONDITIONS DW package resistance junction-to-ambient junction to ambient Thermal resistance, MIN 90 All 8 outputs with equal power N package MAX 95 UNIT C/W PARAMETER MEASUREMENT INFORMATION 24 V 5V 7 2 8 13 Word Generator (see Note A) 3 12 9 SRCLR SRCK 5 4 3 2 1 0 DRAIN 4 -7, 14 -17 Output G 0V 5V SER IN CL = 30 pF (see Note B) RCK 5V G RL = 235 DUT 5V 0V ID VCC SER IN 6 SRCK 0V 5V RCK 0V 5V SRCLR 0V GND 10, 11, 19 24 V DRAIN1 0.5 V VOLTAGE WAVEFORMS TEST CIRCUIT NOTES: A. The word generator has the following characteristics: tr 10 ns, tf 10 ns, tw = 300 ns, pulsed repetition rate (PRR) = 5 kHz, ZO = 50 . B. CL includes probe and jig capacitance. Figure 1. Resistive-Load Test Circuit and Voltage Waveforms POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 5 TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 - JULY 1995 PARAMETER MEASUREMENT INFORMATION 5V G 5V 50% 50% 0V 24 V tPLH tPHL 2 8 13 Word Generator (see Note A) 3 12 9 V SRCLR CC SRCK Output ID RL = 235 4 -7, 14 -17 DUT 10% tr Output 0.5 V tf SWITCHING TIMES CL = 30 pF (see Note B) RCK G 10% DRAIN SER IN 24 V 90% 90% GND 5V 50% SRCK 0V tsu 10, 11, 19 th 5V TEST CIRCUIT SER IN 50% 50% 0V tw INPUT SETUP AND HOLD WAVEFORMS NOTES: A. The word generator has the following characteristics: tr 10 ns, tf 10 ns, tw = 300 ns, pulsed repetition rate (PRR) = 5 kHz, ZO = 50 . B. CL includes probe and jig capacitance. Figure 2. Test Circuit, Switching Times, and Voltage Waveforms TP K DRAIN 0.1 A 2500 F 250 V Circuit Under Test di/dt = 20 A/s + L = 1 mH IF (see Note A) 25 V IF - TP A 0 25% of IRM t2 t1 t3 Driver IRM RG VGG (see Note B) ta 50 trr TEST CIRCUIT CURRENT WAVEFORM NOTES: A. The DRAIN terminal under test is connected to the TP K test point. All other terminals are connected together and connected to the TP A test point. B. The VGG amplitude and RG are adjusted for di/dt = 20 A/s. A VGG double-pulse train is used to set IF = 0.1 A, where t1 = 10 s, t2 = 7 s, and t3 = 3 s. Figure 3. Reverse-Recovery-Current Test Circuit and Waveforms of Source-to-Drain Diode 6 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 - JULY 1995 PARAMETER MEASUREMENT INFORMATION 5V 15 V tw 2 8 10.5 V SRCLR CC 3 Word Generator (see Note A) 12 9 DUT 4 -7, 14 -17 DRAIN RCK See Note B 0V IAS = 0.5 A 200 mH SER IN G 5V Input ID 13 SRCK tav ID VDS GND V(BR)DSX = 50 V MIN VDS 10, 11, 19 VOLTAGE AND CURRENT WAVEFORMS SINGLE-PULSE AVALANCHE ENERGY TEST CIRCUIT NOTES: A. The word generator has the following characteristics: tr 10 ns, tf 10 ns, ZO = 50 . B. Input pulse duration, tw, is increased until peak current IAS = 0.5 A. Energy test level is defined as EAS = IAS x V(BR)DSX x tav/2 = 30 mJ. Figure 4. Single-Pulse Avalanche Energy Test Circuit and Waveforms TYPICAL CHARACTERISTICS SUPPLY CURRENT vs FREQUENCY PEAK AVALANCHE CURRENT vs TIME DURATION OF AVALANCHE 10 2.5 VCC = 5 V TC = - 40C to 125C 4 I CC - Supply Current - mA IAS - Peak Avalanche Current - A TC = 25C 2 1 0.4 2 1.5 1 0.5 0.2 0.1 0.1 0.2 0.4 1 2 4 10 0 0.1 1 10 100 f - Frequency - MHz tav - Time Duration of Avalanche - ms Figure 6 Figure 5 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 7 TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 - JULY 1995 TYPICAL CHARACTERISTICS 18 VCC = 5 V See Note A 16 14 TC = 125C 12 10 8 6 TC = 25C 4 TC = - 40C 2 0 0 100 200 300 400 500 ID - Drain Current - mA 600 700 STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE vs LOGIC SUPPLY VOLTAGE r DS(on) - Static Drain-to-Source On-State Resistance - r DS(on) - Drain-to-Source On-State Resistance - DRAIN-TO-SOURCE ON-STATE RESISTANCE vs DRAIN CURRENT 8 ID = 100 mA See Note A 7 TC = 125C 6 5 TC = 25C 4 3 TC = - 40C 2 1 0 4 6 6.5 4.5 5 5.5 VCC - Logic Supply Voltage - V Figure 7 Figure 8 SWITCHING TIME vs CASE TEMPERATURE 300 ID = 100 mA See Note A tf Switching Time - ns 250 tr 200 tPLH 150 tPHL 100 50 - 50 - 25 0 25 50 75 100 TC - Case Temperature - C Figure 9 NOTE C: Technique should limit TJ - TC to 10C maximum. 8 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 125 7 TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER SLIS032 - JULY 1995 THERMAL INFORMATION MAXIMUM PEAK DRAIN CURRENT OF EACH OUTPUT vs NUMBER OF OUTPUTS CONDUCTING SIMULTANEOUSLY I D - Maximum Continuous Drain Current of Each Output - A 0.45 VCC = 5 V 0.4 0.35 0.3 0.25 TC = 25C 0.2 0.15 TC = 100C 0.1 TC = 125C 0.05 0 1 2 3 4 5 6 7 8 N - Number of Outputs Conducting Simultaneously I D - Maximum Peak Drain Current of Each Output - A MAXIMUM CONTINUOUS DRAIN CURRENT OF EACH OUTPUT vs NUMBER OF OUTPUTS CONDUCTING SIMULTANEOUSLY 0.5 d = 10% 0.45 d = 20% 0.4 0.35 d = 50% 0.3 0.25 d = 80% 0.2 0.15 VCC = 5 V TC = 25C d = tw/tperiod = 1 ms/tperiod 0.1 0.05 0 1 2 3 4 5 6 7 8 N - Number of Outputs Conducting Simultaneously Figure 10 Figure 11 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 9 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. 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