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Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -5.3 A
ID @ TA = 70°C -4.3
IDM Pulsed Drain Current À-43
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C 1.3
Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt Á-5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C
lCo-packaged HEXFET® Power MOSFET
and Schottky Diode
lIdeal For Buck Regulator Applications
lP-Channel HEXFET
lLow VF Schottky Rectifier
lGeneration 5 Technology
lSO-8 Footprint
IRF7322D1PbF
FETKYä MOSFET / Schottky Diode
Notes:
ÀRepetitive rating; pulse width limited by maximum junction temperature (see figure 9)
ÁISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ÂPulse width ≤ 300µs; duty cycle ≤ 2%
ÃSurface mounted on FR-4 board, t ≤ 10sec.
Parameter Maximum Units
RθJA Junction-to-Ambient Ã62.5 °C/W
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Thermal Resistance Ratings
Description
VDSS = -20V
RDS(on) = 0.058Ω
Schottky Vf = 0.39V
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Top View
8
1
2
3
45
6
7
A
A
S
G
D
D
K
K
SO-8
10/12/04
PD - 95298
lLead-Free
IRF7322D1PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 — — V VGS = 0V, ID = -250µA
RDS(on) Static Drain-to-Source On-Resistance — 0.049 0.062 VGS = -4.5V, ID = -2.9A
— 0.082 0.098 VGS = -2.7V, ID = -1.5A
VGS(th) Gate Threshold Voltage -0.70 — — V VDS = VGS, ID = -250µA
gfs Forward Transconductance — 5.9 — S VDS = -10V, ID = -1.5A
IDSS Drain-to-Source Leakage Current — — -1.0 VDS = -16V, VGS = 0V
— — -25 VDS = -16V, VGS = 0V, TJ = 55°C
IGSS Gate-to-Source Forward Leakage — — 100 VGS = -12.0V
Gate-to-Source Reverse Leakage — — -100 VGS = 12.0V
QgTotal Gate Charge — 19 29 ID = -2.9A
Qgs Gate-to-Source Charge — 4.0 6.1 nC VDS = -16V
Qgd Gate-to-Drain ("Miller") Charge — 7.7 12 VGS = -4.5V (see figure 6) Â
td(on) Turn-On Delay Time — 15 22 VDD = -10V
trRise Time — 40 60 ID = -2.9A
td(off) Turn-Off Delay Time — 42 63 RG = 6.0Ω
tfFall Time — 49 73 RD = 3.4Ω Â
Ciss Input Capacitance — 780 — VGS = 0V
Coss Output Capacitance — 470 — pF VDS = -15V
Crss Reverse Transfer Capacitance — 240 — ƒ = 1.0MHz (see figure 5)
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ω
µA
nA
ns
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current (Body Diode) — — -2.5 A
ISM Pulsed Source Current (Body Diode) — — -21
VSD Body Diode Forward Voltage — — -1.2 V TJ = 25°C, IS = -2.9A, VGS = 0V
trr Reverse Recovery Time (Body Diode) — 47 71 ns TJ = 25°C, IF = -2.9A
Qrr Reverse Recovery Charge — 49 73 nC di/dt = 100A/µs Â
MOSFET Source-Drain Ratings and Characteristics
2
Parameter Max. Units. Conditions
IF(av) Max. Average Forward Current 2.7 50% Duty Cycle. Rectangular Wave, TA = 25°C
2 TA = 70°C
ISM Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
A
A
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
VFM Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C
0.62 IF = 2.0A, TJ = 25°C
0.39 IF = 1.0A, TJ = 125°C
0.57 IF = 2.0A, TJ = 125°C .
IRM Max. Reverse Leakage current 0.02 VR = 20V TJ = 25°C
8 T
J = 125°C
CtMax. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated VR
Schottky Diode Electrical Specifications
V
mA
See Fig. 14
IRF7322D1PbF
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2
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
1
10
100
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V = -10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.1
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
-1.50V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.50V
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
I = -2.9A
V = -4.5V
D
GS
Power Mosfet Characteristics
IRF7322D1PbF
4www.irf.com
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
Power Mosfet Characteristics
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0
200
400
600
800
1000
1200
1400
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25 30
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
I = -2.9A
V = -16V
D
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
IRF7322D1PbF
www.irf.com 5
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
Fig 10. Typical On-Resistance Vs. Drain
Current
Fig 11. Typical On-Resistance Vs. Gate
Voltage
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Power Mosfet Characteristics
0.0
0.2
0.4
0.6
0.8
0 4 8 121620
A
-I , Drain Current (A)
D
V = -4.5V
GS
V = -2.7V
GS
0.03
0.04
0.05
0.06
0.07
0.08
0.0 2.0 4.0 6.0 8.0
A
GS
V , Gate-to-Source Voltage (V)
I = -5.3A
D
IRF7322D1PbF
6www.irf.com
Schottky Diode Characteristics
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
Reverse Current - IR (mA)
Fig. 12 - Typical Forward Voltage Drop Characteristics
0.0001
0.001
0.01
0.1
1
10
100
0 4 8 12 16 20
R
)
J
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0
FM
F
Instantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
0
20
40
60
80
100
120
140
160
0.0 0.5 1.0 1.5 2.0 2.5 3.0
F(AV)
A
Average Forward Current - I (A)
Allowable Ambient Temperature - (°C)
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
DC
V = 20V
R = 62.5°C/W
Square wave
r
thJA
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
Forward Voltage Drop - VF (V)
IRF7322D1PbF
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RECTIFIER
LOGO
INTERNAT IONAL
EXAMPLE: THIS IS AN IRF7807D1 (FET KY)
XXXX
807D1
Y = LAS T DIGIT OF T HE YEAR
A = ASSEMBLY SITE CODE
WW = WEEK
LOT CODE
PRODUCT (OPTIONAL)
P = DIS GNATES LEAD - FREE
DAT E CODE (YWW)
PART NUMBER
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BAS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 B AS IC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUT LINE CONF ORMS T O JEDEC OUTLINE MS -012AA.
NOT E S :
1. DIMENS IONING & T OL ERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIME T E R
3. DIME NS I ONS AR E S H OWN I N MIL L IME T E R S [INCHE S ].
5 DIMENS ION DOE S NOT INCLUDE MOLD PROT RUS IONS .
6 DIMENS ION DOE S NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENSION IS T HE LE NGT H OF LEAD FOR SOLDERING T O
A S UBSTRAT E.
MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].
8X 1.78 [.070]
SO-8 (Fetky) Package Outline
SO-8 (Fetky) Part Marking Information
IRF7322D1PbF
8www.irf.com
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
