FQD5N60C / FQU5N60C — N-Channel QFET® MOSFET
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Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted.
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
Device Marking Device Package Reel Size Tape Width Quantity
FQD5N60C FQD5N60CTM D-PAK 330 mm 16 mm 2500 units
FQU5N60C FQU5N60CTU I-PAK Tube N/A 70 units
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA600 -- -- V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, Referenced to 25°C -- 0.6 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 μA
VDS = 480 V, TC = 125°C -- -- 10 μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA2.0 -- 4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 1.4 A -- 2.0 2.5 Ω
gFS Forward Transconductance VDS = 40 V, ID = 1.4 A -- 4.7 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 515 670 pF
Coss Output Capacitance -- 55 72 pF
Crss Reverse Transfer Capacitance -- 6.5 8.5 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300 V, ID = 4.5A,
RG = 25 Ω
(Note 4)
-- 10 30 ns
trTurn-On Rise Time -- 42 90 ns
td(off) Turn-Off Delay Time -- 38 85 ns
tfTurn-Off Fall Time -- 46 100 ns
QgTotal Gate Charge VDS = 480 V, ID = 4.5A,
VGS = 10 V
(Note 4)
-- 15 19 nC
Qgs Gate-Source Charge -- 2.5 -- nC
Qgd Gate-Drain Charge -- 6.6 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 2.8 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 11.2 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.8 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 4.5 A,
dIF / dt = 100 A/μs
-- 300 -- ns
Qrr Reverse Recovery Charge -- 2.2 -- μC