© Semiconductor Components Industries, LLC, 2018
September, 2019 − Rev. 3
1Publication Order Number:
FFSD1065B−F085/D
FFSD1065B-F085
Silicon Carbide Schottky
Diode
650 V, 10 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
Features
•Max Junction Temperature 175°C
•Avalanche Rated 49 mJ
•High Surge Current Capacity
•Positive Temperature Coefficient
•Ease of Paralleling
•No Reverse Recovery / No Forward Recovery
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•Automotive HEV−EV Onboard Chargers
•Automotive HEV−EV DC−DC Converters
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DPAK−3 (TO−252, 3 LD)
CASE 369AS
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
Schottky Diode
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSD1065B = Specific Device Code
1
3
$Y&Z&3&K
FFSD
1065B
1., 3. Cathode 2. Anode
2
FFSD1065B−F085
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2
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol Parameter Value Unit
VRRM Peak Repetitive Reverse Voltage 650 V
EAS Single Pulse Avalanche Energy (Note 1) 49 mJ
IFContinuous Rectified Forward Current @ TC < 150°C 10 A
Continuous Rectified Forward Current @ TC < 135°C 13.5
IF, Max Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms650 A
TC = 150°C, 10 ms570 A
IF,SM Non-Repetitive Forward Surge Current
TC = 25°C
Half-Sine Pulse, tp = 8.3 ms 45 A
Ptot Power Dissipation TC = 25°C 98 W
TC = 150°C 16 W
TJ, TSTG Operating and Storage Temperature Range −55 to +175 °C
TO−247 Mounting Torque, M3 Screw 60 Ncm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 49 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 14 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
RqJC Thermal Resistance, Junction to Case, Max 1.53 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Unit
VFForward Voltage IF = 10 A, TC = 25°C−1.38 1.7 V
IF = 10 A, TC = 125°C−1.6 2.0
IF = 10 A, TC = 175°C−1.72 2.4
IRReverse Current VR = 650 V, TC = 25°C−0.5 40 mA
VR = 650 V, TC = 125°C−1 80
VR = 650 V, TC = 175°C−2 160
QCTotal Capacitive Charge V = 400 V −25 −nC
CTotal Capacitance VR = 1 V, f = 100 kHz −424 −pF
VR = 300 V, f = 100 kHz −39 −
VR = 600 V, f = 100 kHz −35 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number Top Marking Package Shipping*
FFSD1065B−F085 FFSD1065B DPAK−3
(Pb-Free / Halogen Free)
2500 / Tape & Reel
* For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
FFSD1065B−F085
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3
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Current Derating Figure 4. Power Derating
Figure 5. Capacitive Charge vs. Reverse
Voltage
Figure 6. Capacitance vs. Reverse Voltage
0.0
0
4
8
12
16
20
TJ = 175 oC
TJ = 125 oC
TJ = 75 oC
TJ = 25 oC
TJ = −55oC
IF, FORWARD CURRENT (A)
VF, FORWARD VOLTAGE (V)
200
10−9
10−8
10−7
10−6
10−5
IR, REVERSE CURRENT (A)
VR, REVERSE VOLTAGE (V)
TJ = 175 oC
TJ = 125 oC
TJ = −55 oC
TJ = 25 oC
TJ = 75 oC
25 50 75 100 125 150 175
0
20
40
60
80
100
120
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7 D = 1
IF, PEAK FORWARD CURRENT (A)
TC, CASE TEMPERATURE (
oC)
25 50 75 100 125 150 175
0
20
40
60
80
100
PTOT, POWER DISSIPATION (W)
TC, CASE TEMPERATURE (
oC)
0
0
10
20
30
40
QC, CAPACITIVE CHARGE (nC)
VR, REVERSE VOLTAGE (V)
0.1
10
100
1000
CAPACITANCE (pF)
VR, REVERSE VOLTAGE (V)
0.5 1.0 1.5 2.0 2.5 3.0 300 400 500 600 650
100 200 300 400 500 600 650 1 10 100 650
FFSD1065B−F085
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4
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Figure 7. Capacitance Stored Energy
Figure 8. Junction-to-Case Transient Thermal Response Curve
0
0
2
4
6
8
10
VR, REVERSE VOLTAGE (V)
10−610−510−410−310−210−11
1E−4
1E−3
0.01
0.1
1DUTY CYCLE−DESCENDING ORDER
SINGLE PULSE
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
2
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
t, RECTANGULAR PULSE DURATION (sec)
NOTES:
PDM
t1
t2
100 200 300 400 500 600 650
Ec, CAPACITIVE ENERGY (mJ)
ZqJC(t) = r(t) x RqJC
RqJC = 1.53 5C/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1/t2
