FSB560/FSB560A — NPN Low Saturation Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSB560/FSB560A Rev. B2 1
May 2009
FSB560/FSB560A
NPN Low Saturation Transistor
Features
• These devices are designed with high current gain and low saturation voltage with
collector currents up to 2A continuous.
Absolute Maximum Ratings* TA=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150°C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics TA=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCEO Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 80 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current - Continuous 2 A
TJ, TSTG Operating and Storage Junction Temperature Range - 55 to +150 °C
Symbol Parameter Max. Units
FSB560 FSB560A
PDTotal Device Dissipation 500 mW
RθJA Thermal Resistance, Junction to Ambient 250 °C/W
B
E
C
FSB560/FSB560A — NPN Low Saturation Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSB560/FSB560A Rev. B2 2
Electrical Characteristics TA=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol Parameter Test Conditions Min. Max. Units
Off Characteristics
BVCEO Collector-Emitter Breakdown Voltage IC = 10mA 60 V
BVCBO Collector-Base Breakdown Voltage IC = 100µA 80 V
BVEBO Emitter-Base Breakdown Voltage IE = 100µA 5 V
ICBO Collector Cutoff Current VCB = 30V
VCB = 30V, TA = 100°C
100
10
nA
µA
IEBO Emitter Cutoff Current VEB = 4V 100 nA
On Characteristics*
hFE DC Current Gain IC = 100mA, VCE = 2V
IC = 500mA, VCE = 2V FSB560
FSB560A
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
70
100
250
80
40
300
550
VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 100mA
IC = 2A, IB = 200mA FSB560
FSB560A
300
350
300
mV
mV
mV
VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 100mA 1.25 V
VBE(on) Base-Emitter On Voltage IC = 1A, VCE = 2V 1 V
Small Signal Characteristics
Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz 30 pF
fTTransition Frequency IC = 100mA, VCE = 5V, f = 100MHz 75 MHz
FSB560/FSB560A — NPN Low Saturation Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSB560/FSB560A Rev. B2 3
Typical Performance Characteristics
Figure 1. Base-Emitter Saturation Voltage
vs Collector Current
Figure 2. Base-Emitter On Voltage
vs Collector Current
Figure 3. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 4. Input/Output Capacitance
vs Reverse Bias Voltage
Figure 5. Current Gain vs Collector Current Figure 6. Current Gain vs Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V -BASE-EMITTER SATURATION VOLTAGE(V)
C
BESAT
25 °C
- 40 °C
125 °C
β = 10
Base-Emitter On Voltage vs.
Collector Current
0.0001 0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V - BASE-EMITTER ON VOLTAGE (V)
C
BEON
25 °C
- 40 °C
125 °C
V = 2.0V
ce
Collector-Emitter Saturation
Voltage vs Collector Current
0.001 0.01 0.1 1 10
0
0.2
0.4
0.6
0.8
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
C
CESAT
- 40°C
25°C
125°C
β = 10
(mA)
Input/Output Capacitance vs.
Reverse Bias Voltage
0.1 0.2 0.5 1 2 5 10 20 50 100
0
50
100
150
200
250
300
350
400
450
V - COLLECTOR VOLTAGE (V)
CAPACITANCE (pf)
CE
f = 1.0 MHz
C
ibo
C
obo
0.001 0.010 0.100 1.000 10.000
0
100
200
300
400
FSB560
-40oC
VCE = 2 V
TA=150oC
25oC
hFE- DC CURRENT GAIN
IC- COLLECTOR CURRENT [A]
0.001 0.010 0.100 1.000 10.000
0
100
200
300
400
500
600
700
FSB560A
-40oC
VCE = 2 V
TA=125oC
25oC
hFE- DC CURRENT GAIN
IC- COLLECTOR CURRENT [A]
FSB560/FSB560A — NPN Low Saturation Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSB560/FSB560A Rev. B2 4
Physical Dimensions
SuperSOT-23
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I40
