ADVANCED POWER TECHNOLOGY RI- BYI-I/IF/AIT/1Z BYISTORS FOR LINEAR POWER AMPLIFIERS GENERAL DESCRIPTION CASE OUTLINE The BYI-1/1F/1T/1Z is a semiconductor device specifically designed for use in linear amplifier bias circuitry. The byistor acts as a low impedance D.C. bias source which has two modes for thermal compensation. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25C 11 Watts Maximum Voltage and Current BVces Collector to Emiter Voltage 55 Volts BVebo Emitter to Base Voltage 4.0 Volts Ic Collector Current O.7A Maximum Temperatures Storage Temperature - 65 to +150C Operating Junction Temperature +150C ELECTRICAL CHARACTERISTICS @ 25 C SYMBOL | CHARACTERISTICS TEST CONDITIONS | MIN TYP MAX | UNITS Pout Power Output F = 400 MHz 3 Watts Pin Power Input Vec= 28 Volts 0.2 Watts Pg Power Gain 11.8 13 dB Ne Efficiency 60 % VSWR Load Mismatch Tolerance 30:1 BVebo Emitter to Base Breakdown le = 5mA 4.0 Volts BV ces Collector to Emitter Ic = 20mA 55 Volts BVceo Breakdown le = 50mA 30 Volts BVcbo Collector to Emitter Ic =__mA Volts Icbo Breakdown Ve = __ Volts mA Cob Collector to Base Breakdown Vcb = 28 V, F=1 4.5 pF Neg Collector to Base Current MHz 10 45 150 Ojec Output Capacitance Vee=5V,Ic= 100A 16 C/W DC - Current Gain Thermal Resistance Initial Issue June, 1994 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct.