MITSUBISHI Nch POWER MOSFET FS2VS-16A HIGH-SPEED SWITCHING USE FS2VS-16A OUTLINE DRAWING Dimensions in mm __10.5MAX, g a> GATE 2) DRAIN 3 SOURCE @ VDSS cere cence etter eee enter nett enens 800V 4 DRAIN ers (ON) (MAX) pene n eee neato 6.00 WD rere cette cece eet n eee cnet entree reteeeenene oA TO-2208 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (Te = 25C) Parameter Conditions Vbss Drain-source VGS = OV 800 Vass Gate-source Vos =0V fo Drain current 2 1pm Drain current 6 Po Maximum 85 Teh Channel ~55 ~ +150 ~55 ~ +150 4.2 2 - 486 MITSUBISHI ELECTRICELECTRICAL CHARACTERISTICS (tch = 25C) MITSUBISHI Nch POWER MOSFET FS2VS-16A HIGH-SPEED SWITCHING USE Symbol Parameter Test conditions Limits Unit Min. Typ. Max V (BR) bss | Drain-source breakdown voltage | 1D = 1mA, VGS = OV 800 _ _ v V (BR) GSS _| Gate-source breakdown voltage | ias = +100pA, Vbs = OV +30 ~ Vv iass Gate leakage current Vas = t25V, Vos = OV _ _ +10 pA loss Drain current VS = B00V, Vas = OV ~ 1 mA Vas (th) Gate-source threshold voitage Ip = tmA, Vos = 10V 2 3 4 Vv rDS (ON) Drain-source on-state resistance | 1p = 1A, VGS = 10V _ 46 6.0 Q VbS (ON) | Drain-source on-state voltage | Ip = 1A, Vas = 10V _ 4.6 6.0 Vv | yts | Forward transfer admittance _| lo = 1A, Vos = 10V 1.2 2.0 S Ciss input capacitance _ 460 ~_ pF Coss Output capacitance VS = 25V, VGS = OV, f = IMHz ~ 45 = pF Crss Reverse transfer capacitance ~ 8 _ pF td (on) Turn-on delay time 1 ns tr Rise time Vob = 200V, Ip = 1A, Vas = 10V, _ 13 ns ta (off) Turn-off delay time RGEN = RGS = 502 _ 55 ~~ ns tf Fail time _ 22 _ ns VsbD Source-drain voltage is= 1A, Vas = 0V _ 1.0 15 v Rith (ch-c) | Thermal resistance Channel to case _ _ 1.47 CW PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 100 101 i = > 3 2 2 10 2 60 5 z i m 5 < fia a x 3 B 2 40 3 a z 101 o 4 7 wi c 5 To = 25C 3 20 a 3 Single Pulse a. 2 0 10-2 0 50 100 150 200 3 57101 23 57102 23 57103 23 CASE TEMPERATURE Te (C) DRAIN-SOURCE VOLTAGE Vos (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 20 VGS = 20V 5.0 , Y8S= 20V,AT ToT asc . } TOV | Te = 25C Pulse Test 5V Pulse Test =z 40 <= 16 8 8 5 30 5 12 ra rs E 3 2.0 Bm 08 z z < om a 1.0 Q 04 0 0 0 10 20 30 40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vops (V) DRAIN-SOURCE VOLTAGE Vos (V) 2 - 487 ate MITSUBISHI ELECTRIC2 ~ 488 DRAIN-SOURCE ON-STATE CAPACITANCE Ciss, Coss, Crss (pF) VOLTAGE Vops (oN) (V) DRAIN CURRENT {pb (A) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) Te = 28C Pulse Test ta <= 2 32 5 2 o zo a Zz De 28 < cr 0 4 8 12 16 20 GATE-SOURCE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) Te = 25C Vbs = 50V Pulse Test i @ Co 2S < EO az is a5 Pe % 4 8 12 16 20 GATE-SOURCE VOLTAGE Vas (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 103 7 5 3 2 102 7 3 5 = 3 = 2 = 10 e Z = 5 H 3} Tch = 25C 2tf= 1MHz VG@S = 10 0 23 $7109 23 57101 23 5710? 2 DRAIN-SOURCE VOLTAGE Vbs (V) MITSUBISHI ELECTRIC MITSUBISHI Nch POWER MOSFET FS2VS-16A HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) Te = 26C Pulse Test Vas = 10V 20V 0 10-* 23 7102 3 6710! 23 57102 DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 10% 7 VbdS = 10V Pulse Test 5 3 Te = 25C 2 10 7 5 3 2 10) 1077 2 365 710 23 #5 7101 DRAIN CURRENT Ib (A) SWITCHING CHARACTERISTICS (TYPICAL) 7 Tch = 25C 5 Von = 200V 3 Vas = 10V 2 RGEN = Res = 500 ta(off 10? 7 5 3 2 10 10-1 2 345 710 2 345 7100 DRAIN CURRENT Ip (A)DRAIN-SOURCE ON-STATE RESISTANCE rs (ON) (1C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (8A) Dss (C) DRAIN-SOURCE ON-STATE RESISTANCE 10s (ON) (25C) GATE-SOQURCE VOLTAGE Ves (V) DRAIN-SOURCE BREAKDOWN VOLTAGE V (8A) 08s (25C) GATE-SQURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 0 Toh = 26C ID = 2A 16 Vos = 250V 12 0 4 8 12 16 20 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 Ves = 10V Io = 1/21D Pulse Test yo awn 100 NY @ aw 10-1 ~50 0 50 100 = 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 0V fo=imA 0.4 -50 0 50 100 =-150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE = 2th (ch-c) (C/W) MITSUBISHI Nch POWER MOSFET FS2VS-16A HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 Vas = OV Pulse Test = s 2 Ea a 6 c c 2 Oo 4 W Te = 128C hid FEC ~ oO 2 a 0 0 08 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE Vsp (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vos = 10V QO ip=1mA t On L= n= WE Q rs 3 co az OF 23 LS << oO -50 0 50 700 4150 CHANNEL TEMPERATURE Teh (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0,05 til 0. 0.01 Single Pulse -2 10423 5710323 5710223 571023 5710923 5710123 5710 PULSE WIDTH tw (s) 4 MITSUBISH! ELECTRIC 2 - 489