2N7002 central Semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. Marking Code is 702. SOT-23 CASE MAXIMUM RATINGS (T,=25C) SYMBOL UNITS Drain-Source Voltage Vos 60 Vv Drain-Gate Voltage VoG 60 Vv Gate-Source Voltage Ves 40 V Continuous Drain Current (Tc=25C) ID 115 mA Continuous Drain Current (Tc=100C) ID 75 mA Continuous Source Current (Body Diode) Is 115 mA Maximum Pulsed Drain Current IDM 800 mA Maximum Pulsed Source Current Ism 800 mA Power Dissipation Pp 350 mw Operating and Storage Junction Temperature Ty Tstg -65 to +150 Thermal Resistance OA 357 C/W ELECTRICAL CHARACTERISTICS (T,=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSsF Vaqsg=20v 100 nA lassr Vesg=-20V -100 nA Ipss Vpg=60V, Vgg=0 1.0 HA Ipss Vps=60V, Veg=0, Ta=125C 500 LA ID(ON) Vps2 2VDS(ON): Vq@g=10V 500 mA BVpss Ip=10pA 60 105 Vv V@S(th) Vps=Ves; I|p=250yA 1.0 2.1 2.5 Vv VDS(ON) Vgsg=10V, Ilp=500mA 3.75 Vv VDS(ON) Vag=5.0V, ip=50mA 0.375 Vv "DS(ON) Vqg=10V, Ip=500mA 3.7 7.5 Q 84SYMBOL TDS(ON) 'DS(ON) 'DS(ON) 9FS Crsg Ciss Coss ton toft Vsp TEST CONDITIONS MIN TYP MAX Vaqge=t0V, Ilp=500mA, Ta=100C 13.5 Vas=5.0V, Ip=50mA 6.2 7.5 Vqg=5.0V, Ip=50mA, Ta=100C 13.5 Vps2 2VDS(ON): Ip=200mA 80 Vps=25V, Vgg=0, f=1.0MHz 5.0 Vps=25V, Vgsg=0, f=1.0MHz 50 Vps=25V, Vag=0, f= t.OMHz 25 Vpp=30V, Ip=10V, Rq@=25Q, RL =25Q 20 Vpp=30V, Ip=10V, Rg=252, Ry =250 20 Vas=0V, lg=11.5mA -1.5 All dimensions in inches (mm). -005(0. "| MAX IMUM .110(2.80) .118(3.00) " -003(0.08) .083(2.10) .006(0.15) .041(1.05) NOMINAL jee NOMINAL : T .106(2.70) ! .047(1.19) MAX IMUM | .063(1.60) cn i | 3 -014(0.35) .037(0.94) -020(0.50) -050(1.28) LEAD CODE: 1) GATE 2) SOURCE 3) DRAIN 85 UNITS mmhos pF pF ns ns BTN SHEET R1