TAN250A RF POWER TRANSISTOR DESCRIPTION: The ASI TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. PACKAGE STYLE FEATURES INCLUDE: * Gold Metallization * Hermetic Package * Input/Output Matching MAXIMUM RATINGS IC 30 A VCB 60 V PDISS 575 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +200 OC JC 0.30 OC/W CHARACTERISTICS SYMBOL TEST CONDITIONS BV CBO IC = 20 mA BV CES IC = 25 mA BV EBO IE = 20 mA ICBO VCB = 50 V hFE VCE = 5 V POUT PG C TC = 25 OC RBE = 10 IC = 1.0 A VCC = 50 V PIN = 13 W Pulse Width = 20 S MINIMUM TYPICAL MAXIMUM 60 V 60 V 4.0 V 20 f = 960 to 1215 MHz Duty Cycle = 5 % UNITS 250 6.0 7.0 40 12 mA 120 --W dB % A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 1/1 Specifications are subject to change without notice.