ZXTP2014GTA - DIODES INC - Datasheet.Directory

ZXTP2014G

Datasheet Number: DS33716 Rev. 3 - 2

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May 2015

ZXTP2014G

A Product Line of

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140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

Features

 BVCEO > -140V

 IC = -4A High Continuous Collector Current

 ICM = -10A Peak Pulse Current

 Low Saturation Voltage VCE(sat) < -120mV @ IC = -1A

 RSAT = 92mΩ for a Low Equivalent On-Resistance

 hFE Specified up to -10A for a High Gain Hold-Up

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT223

 Case Material: Molded Plastic. “Green” Molding Compound;

UL Flammability Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish - Matte Tin Plated Leads; Solderable per MIL-

STD-202, Method 208

 Weight: 0.112 grams (Approximate)

Ordering Information (Note 4)

Product

Compliance

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

ZXTP2014GTA

AEC-Q101

ZXTP2014

7

12

1,000

ZXTP2014GTC

AEC-Q101

ZXTP2014

13

12

4,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html .

Marking Information

SOT223

Top View

Device Symbol

Top View

Pin-Out

Green

C

E

B

ZXTP 2014 = Product Type Marking Code

YWW = Date Code Marking

Y or Y = Last Digit of Year (ex: 5= 2015)

WW or WW = Week Code (01~53)

YWW

ZXTP

2014

SOT223

ZXTP2014G

Datasheet Number: DS33716 Rev. 3 - 2

2 of 7

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May 2015

ZXTP2014G

A Product Line of

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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-180

V

Collector-Emitter Voltage

VCEO

-140

V

Emitter-Base Voltage

VEBO

-7

V

Continuous Collector Current

IC

-4

A

Peak Pulse Current

ICM

-10

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

PD

3.0

W

(Note 6)

2.0

(Note 7)

1.6

(Note 8)

1.2

Thermal Resistance, Junction to Ambient

(Note 5)

RJA

41.7

°C/W

(Note 6)

62.5

(Note 7)

78.1

(Note 8)

104

Thermal Resistance Junction to Lead

(Note 9)

RJL

10.5

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

ESD Ratings (Note 9)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

8,000

V

3B

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes: 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under

still air conditions whilst operating in a steady-state.

6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.

7. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.

8. Same as Note 5, except the device is mounted on minimum recommended pad layout.

9. Thermal resistance from junction to solder-point (at the end of the collector lead).

10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

ZXTP2014G

Datasheet Number: DS33716 Rev. 3 - 2

3 of 7

www.diodes.com

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ZXTP2014G

A Product Line of

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Thermal Characteristics and Derating Information

100m 110 100

10m

100m

1

10

Single Pulse. Tamb=25°C

52mmX52mm

single sided 2oz Cu

VCE(sat)

Limit

100µs

1ms

10ms

100ms

1s

DC

Safe Operating Area

-IC Collector Current (A)

-VCE Collector-Emitter Voltage (V) 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

25mmX25mm

single sided 1oz Cu

52mmX52mm

single sided 2oz Cu

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 110 100 1k

0

10

20

30

40 52mmX52mm

single sided 2oz Cu

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s) 100µ 1m 10m 100m 110 100 1k

1

10

100

Single Pulse. Tamb=25°C

52mmX52mm

single sided 2oz Cu

Pulse Power Dissipation

Pulse Width (s)

Max Power Dissipation (W)

ZXTP2014G

Datasheet Number: DS33716 Rev. 3 - 2

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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ.

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-180

-200

-

V

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 11)

BVCER

-180

-200

-

V

IC = -1µA, RB ≤ 1kΩ

Collector-Emitter Breakdown Voltage (Note 11)

BVCEO

-140

-160

-

V

IC = -1mA

Emitter-Base Breakdown Voltage

BVEBO

-7

-8.3

-

V

IE = -100µA

Collector Cut-Off Current

ICBO

-

< -1

-

-20

-500

nA

VCB = -150V

VCB = -150V, TA = +100°C

Collector Cut-Off Current

ICER

R ≤1kΩ

-

< -1

-

-20

-500

nA

VCB = -150V

VCB = -150V, TA = +100°C

Emitter Cut-Off Current

IEBO

-

< -1

-10

nA

VEB = -6V

DC Current Transfer Static Ratio (Note 11)

hFE

100

225

-

IC = -10mA, VCE = -5V

100

200

300

IC = -1A, VCE = -5V

45

100

-

IC = -3A, VCE = -5V

-

5

-

IC = -10A, VCE = -5V

Collector-Emitter Saturation Voltage (Note 11)

VCE(sat)

-

-40

-60

mV

IC = -100mA, IB = -5mA

-

-55

-80

IC = -0.5A, IB = -50mA

-

-85

-120

IC = -1A, IB = -100mA

-

-275

-360

IC = -3A, IB = -300mA

Base-Emitter Saturation Voltage (Note 11)

VBE(sat)

-

-940

-1,040

mV

IC = -3A, IB = -300mA

Base-Emitter Turn-On Voltage (Note 11)

VBE(on)

-

-830

-930

mV

IC = -3A, VCE = -5V

Transitional Frequency

fT

-

120

-

MHz

IC = -100mA, VCE = -10V,

f = 50MHz

Output Capacitance

Cobo

-

33

-

pF

VCB = -10V, f = 1MHz

Switching Time

tON

-

42

-

ns

VCC = -50V, IC = -1A,

IB1 = -IB2 = -100mA

tOFF

-

636

-

Note: 11. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

ZXTP2014G

Datasheet Number: DS33716 Rev. 3 - 2

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www.diodes.com

May 2015

ZXTP2014G

A Product Line of

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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

1m 10m 100m 1

10m

100m

1

100m 1

0.0

0.5

1.0

1.5

2.0

1m 10m 100m 110

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1m 10m 100m 1

0.4

0.6

0.8

1.0

1.2

1m 10m 100m 1

0.4

0.6

0.8

1.0

1.2

1.4

0

25

50

75

100

125

150

175

200

225

250

VCE(SAT) v IC

Tamb=25°C IC/IB=50

IC/IB=20

IC/IB=10

- VCE(SAT) (V)

- IC Collector Current (A)

VBE(SAT) v IC

IC/IB=10

100°C

25°C

-55°C

- VCE(SAT) (V)

- IC Collector Current (A)

hFE v IC

VCE=5V

-55°C

25°C

100°C

Normalised Gain

- IC Collector Current (A)

25°C

VCE(SAT) v IC

IC/IB=10

100°C

-55°C

- VBE(SAT) (V)

- IC Collector Current (A)

VBE(ON) v IC

VCE=5V

100°C

25°C -55°C

- VBE(ON) (V)

- IC Collector Current (A)

Typical Gain (hFE)

ZXTP2014G

Datasheet Number: DS33716 Rev. 3 - 2

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May 2015

ZXTP2014G

A Product Line of

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device

terminals and PCB tracking.

A1

A

7°

D

b

e

e1

b1

C

E1

L

0°-10°

Q

E

0.25

Seating

Plane

Gauge

Plane

SOT223

Dim

Min

Max

Typ

A

1.55

1.65

1.60

A1

0.010

0.15

0.05

b

0.60

0.80

0.70

b1

2.90

3.10

3.00

C

0.20

0.30

0.25

D

6.45

6.55

6.50

E

3.45

3.55

3.50

E1

6.90

7.10

7.00

e

-

4.60

e1

-

2.30

L

0.85

1.05

0.95

Q

0.84

0.94

0.89

All Dimensions in mm

Dimensions

Value (in mm)

C

2.30

C1

6.40

X

1.20

X1

3.30

Y

1.60

Y1

1.60

Y2

8.00

X1

Y1

Y

XC

C1 Y2

ZXTP2014G

Datasheet Number: DS33716 Rev. 3 - 2

7 of 7

www.diodes.com

May 2015

ZXTP2014G

A Product Line of

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

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website, harmless against all damages.

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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