CGHV31500F 500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree's CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440217. PN: CGHV315 00F Package Type : 440217 Typical Performance Over 2.7-3.1 GHz (TC = 25C) of Demonstration Amplifier Parameter 2.7 GHz 2.9 GHz 3.1 GHz Units Output Power 650 705 605 W Gain 12.1 12.5 11.8 dB 70 68 58 % Drain Efficiency Note: Measured in the CGHV31500F-AMP application circuit, under 100 s pulse width, 10% duty cycle, PIN = 46 dBm. 18 Rev 3.0 - July 20 Features * 2.7 - 3.1 GHz Operation * 650 W Typical Output Power * 12 dB Power Gain * 65% Typical Drain Efficiency * 50 Ohm Internally Matched * <0.3 dB Pulsed Amplitude Droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Pulse Width PW 100 s Duty Cycle DC 10 % Drain-Source Voltage VDSS 125 Volts 25C 25C Gate-to-Source Voltage VGS -10, +2 Volts Storage Temperature TSTG -65, +150 C Operating Junction Temperature TJ 225 C Maximum Forward Gate Current IGMAX 80 mA 25C Maximum Drain Current1 IDMAX 24 A 25C Soldering Temperature TS 245 C Screw Torque 40 in-oz RJC 0.22 C/W TC -40, +125 C 2 Pulsed Thermal Resistance, Junction to Case Case Operating Temperature 100 sec, 10%, 85C , PDISS = 376 W Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 83.6 mA Gate Quiescent Voltage VGS(Q) - -2.7 - VDC VDS = 50 V, ID = 0.5 A Saturated Drain Current IDS 62.7 75.5 - A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 150 - - VDC VGS = -8 V, ID = 83.6 mA DC Characteristics1 (TC = 25C) 2 Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. Copyright (c) 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV31500F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrical Characteristics Continued... Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics3 (TC = 25C, F0 = 2.7 - 3.1 GHz unless otherwise noted) Output Power at 2.7 GHz POUT1 473 630 - W VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Output Power at 2.9 GHz POUT2 555 725 - W VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Output Power at 3.1 GHz POUT3 473 630 - W VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Gain at 2.7 GHz GP1 - 12.1 - dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Gain at 2.9 GHz GP2 - 12.5 - dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Gain at 3.1 GHz GP3 - 11.8 - dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Drain Efficiency at 2.7 GHz DE1 57 68 - % VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Drain Efficiency at 2.9 GHz DE2 54 67 - % VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Drain Efficiency at 3.1 GHz DE3 50 62 - % VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Small Signal Gain S21 11.25 14.5 - dB VDD = 50 V, IDQ = 500 mA, PIN = 10 dBm Input Return Loss S11 - -15 -5.25 dB VDD = 50 V, IDQ = 500 mA, PIN = 10 dBm Output Return Loss S22 - -5 -3 dB VDD = 50 V, IDQ = 500 mA, PIN = 10 dBm D - -0.3 - dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm VSWR - 5:1 - Y Amplitude Droop Output Stress Match No damage at all phase angles, VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Pulsed Notes: 3 Measured in CGHV31500F-AMP. Pulse Width = 100 S, Duty Cycle = 10%. Copyright (c) 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV31500F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. - CGHV31500F S-Parameters CGHV31400F Typical Sparameters VDD==50 50V,V,Idq IDQ==500 0.5mA A Vdd 20 15 Magnitude (dB) 10 5 0 -5 -10 S(2,1) -15 S(1,1) S(2,2) -20 2.3 2.5 2.7 2.9 Frequency (GHz) 3.1 3.3 3.5 Output Power, Gainand andDrain DrainEfficiency Efficiency vs vs.Frequency Frequency Figure CGHV31400F 2. - CGHV31500F Output Power Vdd = 50 V, Idq = 500 mA, Pin = 45 dBm, Pulse Width = 500 us, Duty 10 VDD = 50 V, IDQ = 0.5 A, PIN = 46 dBm, Pulse Width = 100s, Duty Cycle = 10%, Cycle TCASE ==25C %, Tcase = 25 C 800 80 Output Power 70 Drain Efficiency Output Power (W) 600 60 500 50 400 40 Output Power Gain 300 30 Drain Efficiency 200 20 Gain 100 0 10 2.5 2.6 2.7 2.8 2.9 Frequency (GHz) 3.0 3.1 Copyright (c) 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 Gain (dB) & Drain Efficiency (%) 700 CGHV31500F Rev 3.0 3.2 3.3 0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 3. - CGHV31500F Drain Efficiency Gain vs.Power Input Power CGHV31500F Drain Efficiency & Gain &vs. Input Vdd 50 V, 500 mA, V = 50 V, Idq I == 500 mA, Pulse Pulse Width Width==500 100us, us,Duty DutyCycle Cycle==10 10%% Drain Efficiency (%) DQ 18 60 16 50 14 Drain Efficiency - 2.7 GHz 40 12 Drain Efficiency - 2.9 GHz Drain Efficiency - 3.1 GHz Gain - 2.7 GHz 30 10 Gain - 2.9 GHz Gain - 3.1 GHz 20 8 10 6 0 15 20 25 30 35 Input Power (dBm) 40 45 50 4 Figure 4. - CGHV31500F Output Power vs. Input Power CGHV31500F Output Power vs. Input Power 50IV, Idq = 500 mA, Pulse Width = 100 us, Duty Cycle = 10 %T VDDVdd = 50= V, = 0.5 A, Pulse Width = 100s, Duty Cycle = 10%, = 25C DQ CASE 60 Drain Efficiency 55 Output Power (dBm) Gain (dB) DD 70 50 2.7 GHz 2.9 GHz 3.1 GHz 45 40 Gain 35 30 15 20 25 30 35 Input Power (dBm) 40 45 Copyright (c) 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV31500F Rev 3.0 50 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV31500F-AMP Application Circuit Bill of Materials Designator Description Qty R1 RES, 511, OHM, +/- 1%, 1/16W, 0603 1 R2 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 1 C1 CAP, 6.8pF, +/-0.25%, 250V, 0603 1 C2, C7, C8 CAP, 10.0pF, +/-1%, 250V, 0805 3 C3 CAP, 10.0pF, +/-5%, 250V, 0603 1 CAP, 470pF, 5%, 100V, 0603, X 2 C5 CAP, 33000 pF, 0805, 100V, X7R 1 C6 CAP, 10uF 16V TANTALUM 1 C10 CAP, 1.0uF, 100V, 10%, X7R, 1210 1 C11 CAP, 33uF, 20%, G CASE 1 C12 CAP, 3300uF, +/-20%, 100V, ELECTROLYTIC 1 CONN, SMA, PANEL MOUNT JACK, FL 2 J3 HEADER, RT>PLZ, 0.1CEN LK 9POS 1 J4 CONNECTOR; SMB, Straight, JACK, SMD 1 W1 CABLE, 18 AWG, 4.2 1 PCB, RO4350, 2.5 X 4.0 X 0.030 1 CGHV31500F 1 C4, C9 J1,J2 Q1 CGHV31500F Power Dissipation De-rating Curve CGHV31500F Transient Power Dissipation De-Rating Curve 400 350 Note 1 Power Dissipation (W) 300 250 200 150 100 100 us 10 % 500 us 10 % 50 0 0 25 50 75 100 125 150 Maximum Case Temperature (C) 175 Maximum Case Temperature (C) 200 225 250 Note 1. Area exceeds Maximum Case Temperature (See Page 2). Copyright (c) 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV31500F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV31500F-AMP Application Circuit Outline CGHV31500F-AMP Application Circuit Schematic Copyright (c) 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV31500F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV31500F (Package Type -- 440217) Copyright (c) 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV31500F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV31500F Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 3.1 GHz 500 W Flange - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright (c) 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV31500F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV31500F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV31500F-TB CGHV31500F-AMP Copyright (c) 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV31500F Rev 3.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer's technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright (c) 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV31500F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf