1
Subject to change without notice.
www.cree.com/rf
CGHV31500F
500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specically with high efciency, high gain and wide bandwidth capabilities,
which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplier applications.
The transistor is supplied in a ceramic/metal ange package, type 440217.
Rev 3.0 - July 2018
Features
• 2.7 - 3.1 GHz Operation
• 650 W Typical Output Power
• 12 dB Power Gain
• 65% Typical Drain Efciency
• 50 Ohm Internally Matched
• <0.3 dB Pulsed Amplitude Droop
Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplier
Parameter 2.7 GHz 2.9 GHz 3.1 GHz Units
Output Power 650 705 605 W
Gain 12.1 12.5 11.8 dB
Drain Efciency 70 68 58 %
Note:
Measured in the CGHV31500F-AMP application circuit, under 100 μs pulse width, 10% duty cycle, PIN = 46 dBm.
PN: CGHV31500F
Package Type: 440217
2CGHV31500F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous)
Parameter Symbol Rating Units Conditions
Pulse Width PW 100 µs
Duty Cycle DC 10 %
Drain-Source Voltage VDSS 125 Volts 25˚C
Gate-to-Source Voltage VGS -10, +2 Volts 25˚C
Storage Temperature TSTG -65, +150 ˚C
Operating Junction Temperature TJ225 ˚C
Maximum Forward Gate Current IGMAX 80 mA 25˚C
Maximum Drain Current1IDMAX 24 A 25˚C
Soldering Temperature2TS245 ˚C
Screw Torque τ40 in-oz
Pulsed Thermal Resistance, Junction to Case RθJC 0.22 ˚C/W 100 μsec, 10%, 85˚C , PDISS = 376 W
Case Operating Temperature TC-40, +125 ˚C
Notes:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
Electrical Characteristics
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics1 (TC = 25˚C)
Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 83.6 mA
Gate Quiescent Voltage VGS(Q) –-2.7 – VDC VDS = 50 V, ID = 0.5 A
Saturated Drain Current2IDS 62.7 75.5 –AVDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 83.6 mA
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3CGHV31500F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Electrical Characteristics Continued...
Characteristics Symbol Min. Typ. Max. Units Conditions
RF Characteristics3 (TC = 25˚C, F0 = 2.7 - 3.1 GHz unless otherwise noted)
Output Power at 2.7 GHz POUT1 473 630 – W VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm
Output Power at 2.9 GHz POUT2 555 725 – W VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm
Output Power at 3.1 GHz POUT3 473 630 – W VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm
Gain at 2.7 GHz GP1 –12.1 –dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm
Gain at 2.9 GHz GP2 –12.5 –dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm
Gain at 3.1 GHz GP3 –11.8 –dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm
Drain Efciency at 2.7 GHz DE1 57 68 – % VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm
Drain Efciency at 2.9 GHz DE2 54 67 – % VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm
Drain Efciency at 3.1 GHz DE3 50 62 – % VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm
Small Signal Gain S21 11.25 14.5 –dB VDD = 50 V, IDQ = 500 mA, PIN = 10 dBm
Input Return Loss S11 –-15 -5.25 dB VDD = 50 V, IDQ = 500 mA, PIN = 10 dBm
Output Return Loss S22 –-5 -3 dB VDD = 50 V, IDQ = 500 mA, PIN = 10 dBm
Amplitude Droop D – -0.3 –dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm
Output Stress Match VSWR – 5:1 – YNo damage at all phase angles,
VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Pulsed
Notes:
3 Measured in CGHV31500F-AMP. Pulse Width = 100 μS, Duty Cycle = 10%.
4CGHV31500F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance
Figure 1. - CGHV31500F S-Parameters
VDD = 50 V, IDQ = 0.5 A
Figure 2. - CGHV31500F Output Power and Drain Efciency vs Frequency
VDD = 50 V, IDQ = 0.5 A, PIN = 46 dBm, Pulse Width = 100μs, Duty Cycle = 10%, TCASE = 25°C
0
5
10
15
20
Magnitude (dB)
CGHV31400F Typical Sparameters
Vdd = 50 V, Idq = 500 mA
-20
-15
-10
-5
2.3 2.5 2.7 2.9 3.1 3.3 3.5
Magnitude (dB)
Frequency (GHz)
S(2,1)
S(1,1)
S(2,2)
40
50
60
70
80
400
500
600
700
800
Gain (dB) & Drain Efficiency (%)
Output Power (W)
CGHV31400F Output Power, Gain and Drain Efficiency vs. Frequency
Vdd = 50 V, Idq = 500 mA, Pin = 45 dBm, Pulse Width = 500 us, Duty Cycle = 10
%, Tcase = 25 C
Output Power
0
10
20
30
0
100
200
300
2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3
Gain (dB) & Drain Efficiency (%)
Output Power (W)
Frequency (GHz)
Gain
Drain Efficiency
Output Power
Drain Efciency
Gain
5CGHV31500F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance
Figure 3. - CGHV31500F Drain Efciency & Gain vs. Input Power
VDD = 50 V, IDQ = 500 mA, Pulse Width = 100 us, Duty Cycle = 10 %
Figure 4. - CGHV31500F Output Power vs. Input Power
VDD = 50 V, IDQ = 0.5 A, Pulse Width = 100μs, Duty Cycle = 10%, TCASE = 25°C
Drain Efciency
Gain
10
12
14
16
18
30
40
50
60
70
Gain (dB)
CGHV31500F Drain Efficiency & Gain vs. Input Power
Vdd = 50 V, Idq = 500 mA, Pulse Width = 500 us, Duty Cycle = 10 %
Drain Efficiency - 2.7 GHz
Drain Efficiency - 2.9 GHz
Drain Efficiency - 3.1 GHz
Gain - 2.7 GHz
4
6
8
10
0
10
20
30
15 20 25 30 35 40 45 50
Input Power (dBm)
Gain - 2.9 GHz
Gain - 3.1 GHz
45
50
55
60
Output Power (dBm)
CGHV31500F Output Power vs. Input Power
Vdd = 50 V, Idq = 500 mA, Pulse Width = 100 us, Duty Cycle = 10 %
2.7 GHz
2.9 GHz
3.1 GHz
30
35
40
15 20 25 30 35 40 45 50
Output Power (dBm)
Input Power (dBm)
6CGHV31500F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CGHV31500F-AMP Application Circuit Bill of Materials
Designator Description Qty
R1 RES, 511, OHM, +/- 1%, 1/16W, 0603 1
R2 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 1
C1 CAP, 6.8pF, +/-0.25%, 250V, 0603 1
C2, C7, C8 CAP, 10.0pF, +/-1%, 250V, 0805 3
C3 CAP, 10.0pF, +/-5%, 250V, 0603 1
C4, C9 CAP, 470pF, 5%, 100V, 0603, X 2
C5 CAP, 33000 pF, 0805, 100V, X7R 1
C6 CAP, 10uF 16V TANTALUM 1
C10 CAP, 1.0uF, 100V, 10%, X7R, 1210 1
C11 CAP, 33uF, 20%, G CASE 1
C12 CAP, 3300uF, +/-20%, 100V, ELECTROLYTIC 1
J1,J2 CONN, SMA, PANEL MOUNT JACK, FL 2
J3 HEADER, RT>PLZ, 0.1CEN LK 9POS 1
J4 CONNECTOR; SMB, Straight, JACK, SMD 1
W1 CABLE, 18 AWG, 4.2 1
- PCB, RO4350, 2.5 X 4.0 X 0.030 1
Q1 CGHV31500F 1
CGHV31500F Power Dissipation De-rating Curve
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Temperature (See Page 2).
200
250
300
350
400
Power Dissipation (W)
CGHV31500F Transient Power Dissipation De-Rating Curve
0
50
100
150
0 25 50 75 100 125 150 175 200 225 250
Power Dissipation (W)
Maximum Case Temperature (°C)
100 us 10 %
500 us 10 %
Note 1
7CGHV31500F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CGHV31500F-AMP Application Circuit Outline
CGHV31500F-AMP Application Circuit Schematic
8CGHV31500F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Product Dimensions CGHV31500F (Package Type — 440217)
9CGHV31500F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Part Number System
Parameter Value Units
Upper Frequency13.1 GHz
Power Output 500 W
Package Flange -
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code Code Value
A0
B1
C2
D 3
E4
F 5
G 6
H7
J 8
K 9
Examples: 1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
CGHV31500F
10 CGHV31500F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Product Ordering Information
Order Number Description Unit of Measure Image
CGHV31500F GaN HEMT Each
CGHV31500F-TB Test board without GaN HEMT Each
CGHV31500F-AMP Test board with GaN HEMT installed Each
11 CGHV31500F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2015-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Disclaimer
Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639