2SA1479 / 2SC3789
No.2093-1/5
Applications
•High-definition CRT display.
•Color TV chroma output, high breakdown voltage drivers.
Features
•High breakdown voltage : VCEO≥300V.
•Excellent high frequency characteristic : Cre=1.8pF (typ).
•Adoption of MBIT process.
•No insulator required for mounting, which contributes to reducing the cost and the number of manufacturing
processes.
•Plastic-covered heat sink facilitating high-density mounting.
•Directly interchange able with TO-126 because the package is designed based on the conventional package
dimensions.
Specifications ( ) : 2SA1479
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)300 V
Collector-to-Emitter Voltage VCEO (--)300 V
Emitter-to-Base Voltage VEBO (--)5 V
Collector Current IC(--)100 mA
Collector Current (Pulse) ICP (--)200 mA
Collector Dissipation PC1.5 W
Tc=25°C7W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
www.semiconductor-sanyo.com/network
Ordering number : EN2093A
10709CB MS IM TC-00001817 / O3103TN (KT)/71598HA (KT)/4087TA, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SA1479 / 2SC3789
PNP / NPN Epitaxial Planar Silicon Transistors
High-Definition CRT Display
Video Output Applications
2SA1479 / 2SC3789
No.2093-2/5
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)200V, IE=0A (--)0.1 μA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 μA
DC Current Gain hFE VCE=(--)10V, IC=(--)10mA 40* 320*
Gain-Bandwidth Product fTVCE=(--)30V, IC=(--)10mA 70 MHz
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)20mA, IB=(--)2mA (--)0.6 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)20mA, IB=(--)2mA (--)1.0 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)300 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)300 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)5 V
Output Capacitance Cob VCB=(--)30V, f=1MHz (3.1)2.6 pF
Reverse T ransfer Capacitance Cre VCB=(--)30V, f=1MHz (2.3)1.8 pF
* : The 2SA1479 / 2SC3789 are classified by 10mA hFE as follws:
Rank C D E F
hFE 40 to 80 60 to 120 100 to 200 160 to 320
Package Dimensions
unit : mm (typ)
7516A-002
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
0.8
0.75
2.4
4.8
0.8 0.7
8.0
4.0
1.0 1.0
3.6
1.4
1.6
1.5
1.7
7.5
3.0
15.5 11.0
3.3
3.0
123
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
ITR03763
0--2--4--6--8--10
0
--1
--2
--3
--4
--5
--6
--7
--8
IB=0μA
ITR03764
1068240
0
1
2
3
4
5
6
7
8
2SA1479
IB=0μA
2SC3789
--40μA
--30μA
--10μA
--20μA
40μA
30μA
20μA
10μA
2SA1479 / 2SC3789
No.2093-3/5
Gain-Bandwidth Product, fT -- MHz
fT -- ICfT -- IC
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- mA
DC Current Gain, hFE
hFE -- IC
Collector Current, IC -- mA
Collector Current, IC -- mA
DC Current Gain, hFE
hFE -- IC
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
IC -- VBE
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
--
1.0 23 35757
--
10 7
--
100
522
7
100
10
5
7
5
2
3
2
ITR03771
2SA1479
VCE=--30V
1.0 23 35757 10 7100
522
7
100
10
5
2
2
7
5
3
ITR03772
2SC3789
VCE=30V
1000
100
10
ITR03769
2357 7
3
25 2
--
1.0
--
10
--
100
2
3
5
7
7
2
3
5
1.0 37723 5 10 100
522
7
10
5
100
7
1000
5
3
2
3
2
ITR03770
2SA1479
VCE=--10V 2SC3789
VCE=10V
Ta=75°C
25°
C
--25°C
Ta=75
°C
25
°C
--25°C
ITR03765
0
--
40
--
80
--
120
--
160
--
200
0
--
4
--
5
--
2
--
3
--
1
--
6
--
7
--
8
IB=0μA
ITR03766
120 160 20080400
0
2
3
1
4
5
6
7
8
2SA1479
IB=0μA
2SC3789
--40μA
--30μA
--20μA
--10μA
40μA
30μA
20μA
10μA
ITR03767
0
--
0.2
--
0.4
--
0.6
--
0.8
--
1.0
0
--
20
--
40
--
60
--
80
--
100
--
120
2SA1479
VCE=--5V
Ta=75
°C
25
°
C
--25°C
ITR03768
0 0.2 0.4 0.6 0.8 1.0
0
20
40
60
80
100
120
2SC3789
VCE=5V
Ta=75
°
C
25°C
--25
°
C
2SA1479 / 2SC3789
No.2093-4/5
VBE(sat) -- IC
Collector Current, IC -- mA
Collector Current, IC -- mA
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- mA
VCE(sat) -- IC
VBE(sat) -- IC
Collector Current, IC -- mA
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Cob -- VCB
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Reverse Transfer Capacitance, Cre -- pF
Collector-to-Base Voltage, VCB -- V
Cre -- VCB
Cre -- VCB
Reverse Transfer Capacitance, Cre -- pF
ITR03779
557
--
10 22
--
1.0 233577
--
100
--
1.0
--
10
5
7
3
2
5
7
3
2
2SA1479
IC / IB=10
ITR03780
7557 10 22
1.0 23357
100
3
1.0
5
3
5
7
2
2
10
7
2SC3789
IC / IB=10
ITR03777
557
--
10 22
--
1.0 233577
--
100
--
0.1
--
1.0
5
3
3
5
7
7
--
10
5
7
2
3
2
2SA1479
IC / IB=10
ITR03778
557 10 22
1.0 233577100
0.1
7
1.0
5
7
3
3
5
2
10
5
7
3
2
2SC3789
IC / IB=10
7
--
10 27
--
100 23
--
1.0 23 55
1.0
7
10
5
7
5
3
2
2
ITR03773
2SA1479
f=1MHz 2SC3789
f=1MHz
710 27
100 23
1.0 23 55
1.0
7
10
5
7
5
3
2
2
ITR03774
7
--
10 27
--
100 2
3
--
1.0 23 55
1.0
7
10
5
7
5
3
2
2
ITR03775
2SA1479
f=1MHz 2SC3789
f=1MHz
710 27
100 23
1.0 23 55
1.0
7
10
5
7
5
3
2
2
ITR03776
2SA1479 / 2SC3789
No.2093-5/5
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
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mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
This catalog provides information as of January , 2009. Specifications and information herein are subject
to change without notice.
Collector-to-Emitter Voltage, VCE -- V
A S O
Collector Current, IC -- mA
Ambient Temperature, Ta -- °C
PC -- Ta
Collector Dissipation, PC -- W
0 20 40 60 80 100 120 140 160
0
2
1
3
6
7
8
4
5
ITR03781
ITR03782
DC operation
(Ta=25
°C)
DC operation
10ms
1ms
500μs
10
3
5
7
2
2
3
5
3
2355
7
57 100 23
10
7
2
100
ICP=200mA
IC=100mA
2SA1479 / 2SC3789 2SA1479 / 2SC3789
(
Tc=25
°
C)
(For PNP, minus sign is omitted.)
Ideal radiation
No heat sink
