A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM
TYPICAL
MAXIMUM
UNITS
BVCEO IC = 1.0 mA 16 V
BVCBO IC = 100 µA 25 V
IEBO IEB = 1.0 V 2.0 µµA
ICBO VCB = 15 V 500 µµA
hFE VCE = 8.0 V IC = 100 mA 20 200 ---
COB VCB = 10 V f = 1.0 MHz
1.5 pF
ηηC VCC = 12 V POUT = 0.3 W f = 7.5 GHz 22 %
||S21C||2 VCE = 8.0 V IC = 100 mA f = 1.0 GHz 4.0 dB
POSC VCC = 12 V IC = 120 mA f = 7.5 GHz
320 mW
NPN SILICON RF POWER TRANSISTOR
OSC-0.3C
DESCRIPTION:
The ASI OSC-0.3C is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 225 mA
VCB 25 V
PDISS
5.0 W @ TC = 25 OC
TJ -65 OC to +200 OC
TSTG -65 OC to +200 OC
θθJC 30 OC/W
PACKAGE STYLE .138 2L FLG
ORDER CODE: ASI10636
MINIMUM
inches / mm
.025 / 0.635
B
C
D
E
F
A
MAXIMUM
inches / mm
DIM
F
E
C
B
A
D
.138 / 3.505
.275 / 6.985
.375 / 9.525
.031 / 0.787
.062 / 1.575
