BAS31 -- Small Signal Diode BAS31 Small Signal Diode Connection Diagram 3 3 3 L21 2 1 1 2 1 2 SOT-23 Ordering Information Part Number Top Mark Package Packing Method BAS31 L21 SOT-23 3L Tape and Reel, 7 inch Reel, 3000 pcs BAS31-D87Z L21 SOT-23 3L Tape and Reel, 13 inch Reel, 10000 pcs Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 120 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-Repetitive Peak Forward Surge Current TSTG Storage Temperature Range TJ Operating Junction Temperature Pulse Width = 1.0 second 1.0 Pulse Width = 1.0 microsecond 2.0 A -55 to +150 C 150 C Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations. (c) 2001 Semiconductor Components Industries, LLC. August-2017, Rev. 2 Publication Order Number: BAS31/D Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Value Unit Power Dissipation 350 mW Thermal Resistance, Junction-to-Ambient 357 C/W Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol VR VF Parameter Breakdown Voltage Forward Voltage Conditions IR = 1.0 mA Min. Max. 120 Unit V IF = 10 mA 750 mV IF = 50 mA 840 mV IF = 100 mA 900 mV IF = 200 mA 1.00 V IF = 400 mA 1.25 V VR = 90 V 100 nA VR = 90 V, TA = 150C 100 A IR Reverse Current CT Total Capacitance VR = 0, f = 1.0 MHz 35 pF trr Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 50 ns www.onsemi.com 2 BAS31 -- Small Signal Diode Thermal Characteristics BAS31 -- Small Signal Diode IR - REVERSE CURRENT (nA) 325 Ta= 25C 300 275 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) IIRR - REVERSE CURRENT (nA) 100 Ta= 25C 80 70 60 50 40 30 20 180 200 220 240 VR - REVERSE VOLTAGE (V) 30 20 10 0 55 255 400 350 300 250 725 Ta= 25C 700 650 600 550 500 10 Figure 5. Forward Voltage vs. Forward Current VF - 0.1 to 10 mA 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 Figure 4. Forward Voltage vs. Forward Current VF - 1.0 to 100 A VVFF - FORWARD VOLTAGE (mV) VVF F - FORWARD VOLTAGE (mV) Ta= 25C 450 1 Figure 3. Reverse Current vs. Reverse Voltage IR - 180 to 255 V 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 75 95 115 135 155 175 195 V R - REVERSE VOLTAGE (V) Figure 2. Reverse Current vs. Reverse Voltage IR - 55 to 205 V GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature 450 0.1 Ta= 25C 40 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Figure 1. Reverse Voltage vs. Reverse Current BV - 1.0 to 100 A 90 50 100 V VFF - FORWARD VOLTAGE (mV) VVRR - REVERSE VOLTAGE (V) Typical Performance Characteristics 1.4 Ta= 25C 1.3 1.2 1.1 1 0.9 0.8 0.7 10 20 30 50 100 200 300 IF - FORWARD CURRENT (mA) 500 800 Figure 6. Forward Voltage vs. Forward Current VF - 10 to 800 mA www.onsemi.com 3 BAS31 -- Small Signal Diode 1.3 Ta= -40C 600 Ta= 25C 400 Ta= +80C 1.2 1.1 1 0.9 200 0.8 0.001 0.003 0.01 0.03 0.1 0.3 1 I F - FORWARD CURRENT (mA) 3 10 500 I - CURRENT (mA) 50 40 30 20 0 IF = IR = 30 mA Rloop = 100 Ohms 1 1.5 2 2.5 Irr - REVERSE RECOVERY CURRENT (mA) 3 Figure 9. Reverse Recovery Time vs. Reverse Recovery Current (Irr) 400 300 100 0 0 PD - POWER DISSIPATION (mW) SOT-23 Pkg 100 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 14 15 -F OR WA RD CU RR EN TS TE AD 50 100 150 o TA - AMBIENT TEMPERATURE ( C) Figure 10. Average Rectified Current(IO) and Forward Current (IF) vs. Ambient Temperature(TA) 300 0 12 Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA 200 400 0 4 6 8 10 REVERSE VOLTAGE (V) IR 500 200 2 Figure 8. Capacitance vs. Reverse Voltage Figure 7. Forward Voltage vs. Ambient Temperature VF - 1.0 A - 10 mA (- 40 to +80C) REVERSE RECOVERY (nS) Ta= 25C 800 CAPACITANCE (pF) VVFF - FORWARD VOLTAGE (mV) Typical Performance Characteristics (Continued) 200 Figure 11. Power Derating Curve www.onsemi.com 4 0.95 2.920.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.400.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 0.25 0.20 MIN (0.55) SEATING PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 SCALE: 2X Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE www.onsemi.com 5 BAS31 -- Small Signal Diode Physical Dimensions ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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