IRLR/U3103
HEXFET® Power MOSFET
S
D
G
VDSS = 30V
RDS(on) = 0.019Ω
ID = 55A
Description
11/11/98
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 55
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 39A
IDM Pulsed Drain Current  220
PD @TC = 25°C Power Dissipation 107 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy 240 mJ
IAR Avalanche Current 34 A
EAR Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.4
RθJA Junction-to-Ambient (PCB mount) ** ––– 50 °C/W
RθJA Junction-to-Ambient ––– 110
Thermal Resistance
D -PAK
TO-252AA I-PAK
TO-251AA
lLogic-Level Gate Drive
lUltra Low On-Resistance
lSurface Mount (IRLR3103)
lStraight Lead (IRLU3103)
lAdvanced Process Technology
lFast Switching
lFully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91333E
www.irf.com 1
IRLR/U3103
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.019 VGS = 10V, ID = 33A
––– ––– 0.024 VGS = 4.5V, ID = 25A
VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance 23 ––– ––– S VDS = 25V, ID = 34A
––– ––– 25 µA VDS = 30V, V GS = 0V
––– ––– 250 VDS = 18V, V GS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
QgTotal Gate Charge ––– – –– 50 ID = 34A
Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 28 VGS = 4.5V, See Fig. 6 and 13 
td(on) Turn-On Delay Time ––– 9.0 ––– VDD = 15V
trRise Time ––– 210 ––– ns ID = 34A
td(off) Turn-Off Delay Time ––– 20 ––– RG = 3.4Ω, VGS = 4.5V
tfFall Time ––– 54 ––– RD = 0.43Ω, See Fig. 10 
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 1600 ––– VGS = 0V
Coss Output Capacitance ––– 640 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 320 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
S
D
G
LSInternal Source Inductance ––– 7.5 –––
RDS(on) Static Drain-to-Source On-Resistance
LDInternal Drain Inductance ––– 4.5 –––
IDSS Drain-to-Source Leakage Current
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) 
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V
trr Reverse Recovery Time ––– 81 120 ns TJ = 25°C, IF = 34A
Qrr Reverse RecoveryCharge ––– 210 310 nC di/dt = 100A/µs 
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
55
220
Notes:
VDD = 15V, starting TJ = 25°C, L = 300µH
RG = 25Ω, IAS = 34A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
ISD ≤ 34A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
This is applied for I-PAK, LS of D-PAK is measured between lead and
center of die contact
Uses IRL3103 data and test conditions
Pulse width ≤ 300µs; duty cycle ≤ 2%
Calculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A
Ω
IRLR/U3103
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Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
1
10
100
1000
0.1 1 10 100
I , D ra in -to -S o u rc e C u rre nt (A)
D
V , D rain-to-S ource V olta ge (V)
DS
A
20µ s P ULS E WID TH
T = 25°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
1
10
100
1000
0.1 1 10 100
I , D ra in -to -S o u rc e C u rre nt (A)
D
V , D rain-to-S ource V olta ge (V)
DS
A
20µ s P ULS E WID TH
T = 175°C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
1
10
100
1000
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
T = 25°C
J
GS
V , G a te-to-So urc e Vo lta
g
e
(
V
)
D
I , D rain-to-S ource C urrent (A )
T = 175°C
J
A
V = 15V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junc tion T em perature
(
°C
)
R , D rain-to -So urc e On R es istan ce
DS(on)
(Normalized)
V = 1 0 V
GS
A
I = 56A
D
IRLR/U3103
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
400
800
1200
1600
2000
2400
2800
3200
1 10 100
C , C apacitance (pF)
DS
V , D rain-to -S ourc e V oltage (V )
A
V = 0 V , f = 1 M H z
C = C + C , C S HO RTED
C = C
C = C + C
GS
is s gs g d d s
rs s gd
o s s d s g d
C
iss
C
oss
C
rss
0
3
6
9
12
15
0 10203040506070
Q , Tota l Ga te Ch a rg e (n C )
G
V , Ga te-to -So urc e V o ltag e (V )
GS
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 2 4 V
V = 1 5 V
I = 3 4 A
DS
DS
D
10
100
1000
0.4 0.8 1.2 1.6 2.0 2.4 2.8
T = 25°C
J
V = 0 V
GS
V , So urc e-to -D rain V olta
g
e (V)
I , R everse D rain C urrent (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100
V , D rain-to-S ource V oltage (V)
DS
I , Drain C urrent (A)
O P ER A T IO N IN TH IS A R E A L IMITE D
B Y R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25 °C
T = 175°C
Single Pulse
C
J
IRLR/U3103
www.irf.com 5
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
5.0V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectan
g
ular Pulse Duration
(
sec
)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
10
20
30
40
50
60
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
IRLR/U3103
6 www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
5.0 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
10V
0
100
200
300
400
500
600
25 50 75 100 125 150 175
J
E , S ingle P ulse Avalanche E nergy (m J)
AS
A
Starting T , Junction Temperature (°C)
V = 1 5 V
I
T O P 14A
24 A
B OT TOM 34 A
DD
D
IRLR/U3103
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRLR/U3103
8 www.irf.com
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
TO-252AA (D-PARK)
Par t Mar king Infor mation
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
6.22 (.245)
5.97 (.235)
- B -
3X 0.89 (.035)
0.64 (.025)
0.25 (.010) M A M B
4.57 (.180)
2.28 (.090)
2X 1.14 (.045)
0.76 (.030)
1.52 (.060)
1.15 (.045)
1.02 (.040)
1.64 (.025)
5.46 (.215)
5.21 (.205) 1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086) 1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
0.51 (.020)
M IN .
0.58 (.023)
0.46 (.018)
LEAD ASSIG NMENTS
1 - GA TE
2 - DR AIN
3 - SOURCE
4 - DR AIN
10.42 (.410)
9.40 (.370)
NOTES:
1 D IME N SION ING & TOLE RA NC ING P ER AN S I Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 C ONF ORMS TO JED EC O UT L IN E T O-2 5 2A A.
4 DIMENSION S SHOWN ARE BEFORE SOLDER DIP,
S O LDE R DIP M A X. +0.16 (.006).
INTERNATIONAL
R EC T IF IER
L OGO
ASSEMBLY
LOT C O DE
EX A MP L E : THIS IS AN IR FR1 2 0
WIT H A SS EMB L Y
L OT CO DE 9U1 P FIRST PORTION
OF PART NUMBER
SECOND PORTION
OF PART NUMBER
120
IRFR
9 U 1 P
A
IRLR/U3103
www.irf.com 9
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
TO-251AA (I-PARK)
Par t Mar king Infor mation
6.73 (.265)
6.35 (.250)
- A -
6.22 (.245)
5.97 (.235)
- B -
3X 0.89 (.035)
0.64 (.025)
0.25 (.010) M A M B
2.28 (.090)
1.14 (.045)
0.76 (.030)
5.46 (.215)
5.21 (.205) 1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086)
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018) LEAD ASSIGNM ENTS
1 - GA TE
2 - DR AIN
3 - SOUR CE
4 - DR AIN
NOTES:
1 D IME NS ION ING & TOLE RA N C IN G PE R A N SI Y14.5M , 1982.
2 CONTROLLING DIMENSION : INCH.
3 C ONFOR MS TO J ED EC O UT L INE T O-2 52A A.
4 DIMENSIONS SHOWN ARE BEFORE SOLD ER DIP,
SOLDER DIP M AX. +0 .16 (.0 0 6 ) .
9.65 (.380)
8.89 (.350)
2X
3X
2.28 (.090)
1.91 (.075)
1.52 (.060)
1.15 (.045)
4
1 2 3
6.45 (.245)
5.68 (.224)
0.58 (.023)
0.46 (.018)
INTERNATIONAL
R ECT IF IE R
L O GO
ASSEMBLY
L OT CO DE
FIR ST P ORTION
OF PART NUMBE
R
SECOND PORTION
OF PART NUMBER
120
9U 1P
EXAMPLE : THIS IS AN IRFU120
WITH ASSEMBLY
L OT C ODE 9 U 1P
IRFU
IRLR/U3103
10 www.irf.com
Tape & Reel Infor mation
TO-252AA
TR
1 6 . 3 ( .6 4 1 )
1 5 . 7 ( .6 1 9 )
8.1 ( .318 )
7.9 ( .312 )
1 2 .1 ( .4 76 )
1 1 .9 ( .4 69 ) FEED DIRECTIO N FEED DIR ECTIO N
1 6 .3 ( .6 41 )
1 5 .7 ( .6 19 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : M ILLIMETER.
2. ALL DIM ENSIONS ARE SHOWN IN M ILLIMETERS ( INCHES ).
3. O U TLINE CO NFO RM S TO EIA-481 & EIA-541.
NO TES :
1. O UTLINE C ON FO RMS T O EIA-481.
16 mm
1 3 INCH
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http://www.irf.com/ Data and specifications subject to change without notice. 11/98