BZX84-C33,215 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1999 May 18

2003 Apr 10

DISCRETE SEMICONDUCTORS

BZX84 series

Voltage regulator diodes

ook, halfpage

M3D088

2003 Apr 10 2

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX84 series

FEATURES

•Total power dissipation: max. 250 mW

•Three tolerance series: ±1%, ±2% and approx. ±5%

•Working voltage range: nom. 2.4 to 75 V (E24 range)

•Non-repet itive peak reverse power dis sipation:

max. 40 W.

APPLICATIONS

•General regulation functions.

DESCRIPTION

Low-power voltage regulator diodes in sma ll SOT23

plastic SMD packages.

The diodes are available in the normalized E24 ±1%

(BZX84-A), ±2% (BZX84-B) and approx. ±5% (BZX84-C)

tolerance ra ng e . The series consists of 37 types with

nominal working voltages from 2.4 to 75 V.

PINNING

PIN DESCRIPTION

1anode

2not connected

3cathode

Fig.1 Simplified outline (SOT23 ) and symbo l .

handbook, halfpage

MAM243

n.c. 1

Top view

2003 Apr 10 3

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX84 series

MARKING

Note

1. ∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

∗ = W : Made in China.

TYPE

NUMBER MARKING

CODE(1) TYPE

NUMBER MARKING

CODE(1) TYPE

NUMBER MARKING

CODE(1) TYPE

NUMBER MARKING

CODE(1)

Marking codes for BZX84-A2V4 to BZX84-A75

BZX84-A2V4 Y50 or ∗50 BZX84-A6V2 Y60 or ∗60 BZX84-A16 Y70 BZX84-A43 Y80 or ∗C5

BZX84-A2V7 Y51 or ∗51 BZX84-A6V8 Y61 or ∗61 BZX84-A18 Y71 BZX84-A47 Y81

BZX84-A3V0 Y52 or ∗52 BZX84-A7V5 Y62 or ∗62 BZX84-A20 Y72 or ∗C2 BZX84-A51 Y82 or ∗C6

BZX84-A3V3 Y53 BZX84-A8V2 Y63 or ∗63 BZX84-A22 Y73 BZX84-A56 Y83

BZX84-A3V6 Y54 or ∗C1 BZX84-A9V1 Y64 or ∗64 BZX84-A24 Y74 BZX84-A62 Y84

BZX84-A3V9 Y55 or ∗55 BZX84-A10 Y65 or ∗65 BZX84-A27 Y75 or ∗75 BZX84-A68 Y85

BZX84-A4V3 Y56 or ∗56 BZX84-A11 Y66 or ∗04 BZX84-A30 Y76 BZX84-A75 Y86 or ∗86

BZX84-A4V7 Y57 or ∗57 BZX84-A12 Y67 or ∗67 BZX84-A33 Y77 − −

BZX84-A5V1 Y58 or ∗58 BZX84-A13 Y68 or ∗C0 BZX84-A36 Y78 or ∗C3 − −

BZX84-A5V6 Y59 or ∗59 BZX84-A15 Y69 or ∗69 BZX84-A39 Y79 or ∗C4 − −

Marking codes for BZX84-B2V4 to BZX84-B75

BZX84-B2V4 Z50 or ∗Z0 BZX84-B6V2 Z60 or ∗R5 BZX84-B16 Z70 or ∗70 BZX84-B43 Z80 or ∗S5

BZX84-B2V7 Z51 or ∗Z1 BZX84-B6V8 Z61 or ∗R6 BZX84-B18 Z71 or ∗71 BZX84-B47 Z81 or ∗S6

BZX84-B3V0 Z52 or ∗S1 BZX84-B7V5 Z62 or ∗R8 BZX84-B20 Z72 or ∗72 BZX84-B51 Z82 or ∗S9

BZX84-B3V3 Z53 or ∗S2 BZX84-B8V2 Z63 or ∗R9 BZX84-B22 Z73 or ∗73 BZX84-B56 Z83 or ∗R0

BZX84-B3V6 Z54 or ∗S3 BZX84-B9V1 Z64 or ∗T1 BZX84-B24 Z74 or ∗74 BZX84-B62 Z84 or ∗R3

BZX84-B3V9 Z55 or ∗S4 BZX84-B10 Z65 or ∗66 BZX84-B27 Z75 or ∗Z5 BZX84-B68 Z85 or ∗R4

BZX84-B4V3 Z56 or ∗S7 BZX84-B11 Z66 or ∗Z6 BZX84-B30 Z76 or ∗Z4 BZX84-B75 Z86 or ∗R7

BZX84-B4V7 Z57 or ∗S8 BZX84-B12 Z67 or ∗Z7 BZX84-B33 Z77 or ∗Y1 − −

BZX84-B5V1 Z58 or ∗R1 BZX84-B13 Z68 or ∗Z8 BZX84-B36 Z78 or ∗Y2 − −

BZX84-B5V6 Z59 or ∗R2 BZX84-B15 Z69 or ∗Z9 BZX84-B39 Z79 or ∗S0 − −

Marking codes for BZX84-C2V4 to BZX84-C75

BZX84-C2V4 Z11 or ∗T3 BZX84-C6V2 Z4∗BZX84-C16 Y5∗BZX84-C43 Y15 o r ∗B4

BZX84-C2V7 Z12 or ∗T4 BZX84-C6V8 Z5∗BZX84-C18 Y6∗BZX84-C47 Y16 or ∗B5

BZX84-C3V0 Z13 or ∗T9 BZX84-C7V5 Z6∗BZX84-C20 Y7∗BZX84-C51 Y17 or ∗B7

BZX84-C3V3 Z14 or ∗B1 BZX84-C8V2 Z7∗BZX84-C22 Y8∗BZX84-C56 Y18 or ∗B8

BZX84-C3V6 Z15 or ∗B2 BZX84-C9V1 Z8∗BZX84-C24 Y9∗BZX84-C62 Y19 or ∗B9

BZX84-C3V9 Z16 or ∗B3 BZX84-C10 Z9∗BZX84-C27 Y10 or ∗T2 BZX84-C68 Y20 or ∗B0

BZX84-C4V3 Z17 or ∗B6 BZX84-C11 Y1∗BZX84-C30 Y11 or ∗T5 BZX84-C75 Y21 or ∗A1

BZX84-C4V7 Z1∗BZX84-C12 Y2∗BZX84-C33 Y12 or ∗T6 − −

BZX84-C5V1 Z2∗BZX84-C13 Y3∗BZX84-C36 Y13 or ∗T7 − −

BZX84-C5V6 Z3∗BZX84-C15 Y4∗BZX84-C39 Y14 or ∗T8 − −

2003 Apr 10 4

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX84 series

LIMITING VALUES

In accordance with the A bsolute Maxi mum Rating System (IEC 60134).

Note

1. Device mounted on an FR4 printed circuit-board .

ELECTRICAL CHARACTERISTIC S

Total BZX84-A and B and C series

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −200 mA

IZSM non-repetitive peak reverse current tp = 100 μs; square wave;

Tj = 25 °C prior to surge see Tables

1 and 2

Ptot total power dissipation Tamb = 25 °C; note 1 −250 mW

PZSM non-repetitive peak re verse power

dissipation tp = 100 μs; square wave;

Tj = 25 °C prior to surge; see Fig.2 −40 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage IF = 10 mA; see Fig.3 0.9 V

IRreverse current

BZX84-A/B/C2V4 VR = 1 V 50 μA

BZX84-A/B/C2V7 VR = 1 V 20 μA

BZX84-A/B/C3V0 VR = 1 V 10 μA

BZX84-A/B/C3V3 VR = 1 V 5 μA

BZX84-A/B/C3V6 VR = 1 V 5 μA

BZX84-A/B/C3V9 VR = 1 V 3 μA

BZX84-A/B/C4V3 VR = 1 V 3 μA

BZX84-A/B/C4V7 VR = 2 V 3 μA

BZX84-A/B/C5V1 VR = 2 V 2 μA

BZX84-A/B/C5V6 VR = 2 V 1 μA

BZX84-A/B/C6V2 VR = 4 V 3 μA

BZX84-A/B/C6V8 VR = 4 V 2 μA

BZX84-A/B/C7V5 VR = 5 V 1 μA

BZX84-A/B/C8V2 VR = 5 V 700 nA

BZX84-A/B/C9V1 VR = 6 V 500 nA

BZX84-A/B/C10 VR = 7 V 200 nA

BZX84-A/B/C11 VR = 8 V 100 nA

BZX84-A/B/C12 VR = 8 V 100 nA

BZX84-A/B/C13 VR = 8 V 100 nA

BZX84-A/B/C15 to 75 VR = 0.7VZnom 50 nA

2003 Apr 10 5

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX84 series

Table 1 Per type BZX84-A/B/C2V4 to A/B/C24

Tj = 25 °C unless otherwise specified.

BZX84-

Axxx

Bxxx

Cxxx

WORKING VOLTAGE

VZ (V)

at IZtest = 5 mA

DIFFERENTIAL

RESISTANCE

rdif (Ω)

TEMP. COEFF.

SZ (mV/K)

at IZtest = 5 mA

(see Figs 4 and 5)

DIODE CAP.

Cd (pF)

at f = 1 MHz;

VR = 0 V

NON-REPETITIVE

PEAK REVERSE

CURRENT

IZSM (A)

at tp = 100 μs;

Tamb = 25 °C

Tol. ±1% (A) Tol. ±2% (B) Tol. approx.

±5% (C) at

IZtest = 1 mA at

IZtest = 5 mA

MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

2V4 2.37 2.43 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0450 6.0

2V7 2.67 2.73 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0450 6.0

3V0 2.97 3.03 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0450 6.0

3V3 3.26 3.34 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0450 6.0

3V6 3.56 3.64 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0450 6.0

3V9 3.86 3.94 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0450 6.0

4V3 4.25 4.35 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0450 6.0

4V7 4.65 4.75 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0

5V1 5.04 5.16 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0

5V6 5.54 5.66 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0

6V2 6.13 6.27 6.08 6.32 5.8 6.6 40 150 610 0.4 2.3 3.7 200 6.0

6V8 6.73 6.87 6.66 6.94 6.4 7.2 30 80 615 1.2 3.0 4.5 200 6.0

7V5 7.42 7.58 7.35 7.65 7.0 7.9 30 80 615 2.5 4.0 5.3 150 4.0

8V2 8.11 8.29 8.04 8.36 7.7 8.7 40 80 615 3.2 4.6 6.2 150 4.0

9V1 9.00 9.20 8.92 9.28 8.5 9.6 40 100 615 3.8 5.5 7.0 150 3.0

10 9.90 10.10 9.80 10.20 9.4 10.6 50 150 820 4.5 6.4 8.0 90 3.0

11 10.80 11.11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5

12 11.88 12.12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5

13 12.87 13.13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5

15 14.85 15.15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0

16 15.84 16.16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5

18 17.82 18.18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5

20 19.80 20.20 19.60 20.40 18.8 21.2 60 225 15 55 14.4 16.4 18.0 60 1.5

22 21.78 22.22 21.60 22.40 20.8 23.3 60 250 20 55 16.4 18.4 20.0 60 1.25

24 23.76 24.24 23.50 24.50 22.8 25.6 60 250 25 70 18.4 20.4 22.0 55 1.25

2003 Apr 10 6

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX84 series

Table 2 Per type BZX84-A/B/C27 to A/B/C75

Tj = 25 °C unless otherwise specified.

BZX84-

Axxx

Bxxx

Cxxx

WORKING VOLTAGE

VZ (V)

at IZtest = 2 mA

DIFFERENTIAL

RESISTANCE

rdif (Ω)

TEMP. COEFF.

SZ (mV/K)

at IZtest = 2 mA

(see Figs 4 and 5)

DIODE CAP.

Cd (pF)

at f = 1 MHz;

VR = 0 V

NON-REPETITIVE

PEAK REVERSE

CURRENT

IZSM (A)

at tp = 100 μs;

Tamb = 25 °C

Tol. ±1% (A) Tol. ±2% (B) Tol. approx.

±5% (C) at

IZtest = 0.5 mA at

IZtest = 2 mA

MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

27 26.73 27.27 26.50 27.50 25.1 28.9 65 300 25 80 21.4 23.4 25.3 50 1.0

30 29.70 30.30 29.40 30.60 28.0 32.0 70 300 30 80 24.4 26.6 29.4 50 1.0

33 32.67 33.33 32.30 33.70 31.0 35.0 75 325 35 80 27.4 29.7 33.4 45 0.9

36 35.64 36.36 35.30 36.70 34.0 38.0 80 350 35 90 30.4 33.0 37.4 45 0.8

39 38.61 39.39 38.20 39.80 37.0 41.0 80 350 40 130 33.4 36.4 41.2 45 0.7

43 42.57 43.43 42.10 43.90 40.0 46.0 85 375 45 150 37.6 41.2 46.6 40 0.6

47 46.53 47.47 46.10 47.90 44.0 50.0 85 375 50 170 42.0 46.1 51.8 40 0.5

51 50.49 51.51 50.00 52.00 48.0 54.0 90 400 60 180 46.6 51.0 57.2 40 0.4

56 55.44 56.56 54.90 57.10 52.0 60.0 100 425 70 200 52.2 57.0 63.8 40 0.3

62 61.38 62.62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3

68 67.32 68.68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25

75 74.25 75.75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2

2003 Apr 10 7

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX84 series

THERMAL CHARACTE RISTICS

Note

1. Device mounted on an FR4 printed circuit-board .

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point 330 K/W

Rth j-a thermal resistance from junction to ambient note 1 500 K/W

2003 Apr 10 8

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX84 series

GRAPHICAL DATA

Fig.2 Maximum permissible non-repetitive peak

reverse powe r dissipation versus dur ation.

handbook, halfpage

MBG801

103

1 duration (ms)

PZSM

(W)

102

10−1

(1)

(2)

(1) Tj = 25 °C (prior to surge).

(2) Tj = 150 °C (prior to surge).

Fig.3 Forward current as a function of forward

voltage; typical values.

handbook, halfpage

0.6 1

300

100

200

MBG781

0.8 VF (V)

(mA)

Tj = 25 °C.

Fig.4 Temperature coefficient as a functi on of

working current; typical values.

handbook, halfpage

060

−2

−3

−1

MBG783

20 40 IZ (mA)

(mV/K) 4V3

3V9

3V6

3V0

2V4

2V7

3V3

BZX84-A/B/C2V4 to A/B/C4V3.

Tj = 25 to 150 °C.

Fig.5 Temperature coefficient as a functi on of

working current; typical values.

handbook, halfpage

02016

−5

MBG782

4812 IZ (mA)

(mV/K)

4V7

9V1

8V2

7V5

6V8 6V2

5V6

5V1

BZX84-A/B/C4V7 to A/B/C12.

Tj = 25 to 150 °C.

2003 Apr 10 9

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX84 series

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT2

2003 Apr 10 10

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX84 series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

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Printed in The Netherlands 613514/03/ pp11 Date of release: 2003 Apr 10 Document orde r number: 9397 750 10959