cry fr) Lue L AUS; 2 [NACOSS SISOS ig Powell LP MOS (TMOS) FETs RF Power FETs provide high gain, improved high-order inter- modulation distortion, high input impedance, and built-in gain control for ALC and manual power output control. The FETs listed in these tables are specified for operation in RF Power Amplifiers and are listed by specific application at a given test frequency. Arrangement within each application group is in the order of increasing supply voltage then output power. Modulation type is given in each application heading. All devices are NPN polarity except where otherwise noted. 2--100 MHz HF/SSB FETs These linear RF TMOS Field-Effect Transistors are designed primarily for linear large-signal output stages in the 2-100 MHz frequency range operating from 50 volt power supplies. These transistors are fully characterized at 30 MHz. Gp _ Typical Typical IMD Device _ Gain dB d9 dB : Package MRF 153 800 17 86 368-01 MRF 154 600 7 ~ 25 368-01 9-150 MHz HF/SSB FETs These linear RF TMOS Field-Etfect Transistors are designed for military and commercial HE/SSB fixed, mobile, and marine transmitters operating from either 28 or 50 volt power supplies. These devices are fully characterized at 30 MHz. Pout Pin a Typical IMD | Vp Output Power | Input Power Typical Supply Device Watts Watts _ Gain dB dg dB d44 dB Voltage Package MRF 138 30 0.6 17 - 30 - 60 28 211-07 MRF 140 150 47 15 -30 - 60 28 211-11 MRF 148 30 0.5 18 ~35 --60 50 211-07 MRF 150 150 2.9 17 32 60 50 211-11 MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-73