rn OB EW ENGLAND SEMI 2N4300 CONDUCTOR NPN EPITAXIAL SILICON POWER TRANSISTORS PLANAR SILICON POWER .. for power-amplifier and high-speed-switching applications. TRANSISTOR TO-5 15 WATT @ 100C CASE TEMPERATURE MAXIMUM Veuar) = 0.3 VOLTS @ 1.0 AMP. I. TYPICAL toy =130 ns @ 1.0 AMP. I. e MINIMUM f,=30 MHz MAXIMUM RATINGS RATINGS SYMBOL 2N4300 UNITS Collector-Emitter Voltage - Vero 80 Vde Collector-Base Voltage Vego 100 Vde Emitter-Base Voltage Vepo 8.0 Vde Collector Current -- Continuous le 2.0 Adc Peak 4.0 Adc Base Current -- Continuous Ip 1.0 Ade Emitter Current--Continuous Ip 3.0 Ade Total Power Dissipation @ T= 25 'C Py 1.0 W Derate above 25C* 15 wc Operating & Storage Junction Temperature Range Ty Tstg -65 to +200 C Lead temperature 4 inch from Case for 10 seconds Ty 230 "C THERMAL CHARACTERISTICS CHARACTERISTICS SYMBOL MAX. UNITS Thermal Resistance, Junction-to-Case Roc 6.66 C\W Thermal Resistance, Junction-to-Free-Air Rosa 175 C\W This value applies for t, < 0.3 ms, duty cycle < 10%. This value applies when the base-emitter diode is open-circuited. *Derate linearly to 200C free air temperature at the rate of 5.72 mW/ Derate linearly to 200C case temperature at the rate of 0.15 W/ MECHANICAL OUTLINE 0.200 0240 is =] q 0. 0.370 9 335 Lo 9.335 9305 O' eh. ae on T Ti 0.925 0.400 MIN rr 2 LEADS 0.019 O.018 i 0.009 DETAILS OF OUTLINE IN THIS ZONE OPTIONAL DIA SEATING PLANE CASE TEMPERATURE |S MEASURED 0.144 INCH 10.010 INCH DOWN FROM TOP OF CAN. THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE. 3 COLLECTOR ALL JEDEC TO-5 DIMENSIONS AND NOTES ARE APPLICABLE. ALL DIMENSIONS ATE IN INCHES UNLESS OTHERWISE SPECIFIED NEW ENGLAND SEMICONDUCTOR 6 Lake Street Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.860-329 REV: -- Gg B PNEW ENGLAND SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (T, = 25'C uniess otherwise noted) | Characteristics OFF CHARACTERISTICS | Symbol | Min | Max | Unit | Collector-Emitter Breakdown Voltage I- =30 mAde, Ip = 0 ViaryCEQ 80 Vde Collector Cutoff Current Voeg = 40 Vde, Ip= 0 Icro 1.0 pAdc Collector Cutoff Current Veg = 90 Vde, Vee = 0 Vey = 90 Vde, Vee = 0, Te = 150C 10 pAdc 75 pAdc Emitter Cutoff Current Ves =5.0 Vdc, Ic =0 Ves = 8.0 Vde, Ic =0 0.5 yAdc 10 ON CHARACTERISTICS * Static Forward Current Transfer Ratio I. = 1.0 Ade, Voy = 2.0 Vde Ic =2.0 Ade, Ver =2.0 Vde 30 120 15 Collector-Emitter Saturation Voltage Ic = 1.0 Adc, Ig = 100 mAdc 1. = 2.0 Ade, Ig = 200 mAdc VE (sat) 0.3 Vde 0.5 Base-Emitter Voltage Ic =2.0 Ade, Veg = 2.0 Vde Vpu 1.2 Vde DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio Ic =1.0 Ade, Vcg =5.0 Vde, f=1kHz he. 30 Forward Current Transfer Ratio Ic =1.0 Adc, Veg =10 Vde, f=15 MHz lhe | 2.0 SWITCHING CHARACTERISTICS Characteristics Symbol Typical Units Turn-On Time t on 0.13 ps Turn-Off Time torr 1.5 ps These parameters must be measured using pulse techniques, [, = 300 ks, duty cycle < 2.0%. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. SX LEVEL RELIABILITY TESTING 100% SCREENING GROUP A GROUP B GROUP C (Sample) (Sample) Internal Visual Visual and Mechanical Solderability Physical Dimensions Temp Cycle DC Static Tests 25C Temp Cycle Thermal Shock Thermal Response Constant Acceleration PIND Fine and Gross Leak HTRB Power Burn In DC Static Tests High Temp DC Static Tests Low Temp Dynamic Tests @ 25C Fine and Gross Leak Bond Strength Intermittent Op Life Steady State Op Life Thermal Resistance Hi-Temp (non- operating) Terminal Strength Hermetic Seal Moisture Resistance Shock Test Vibration Test Constant Acceleration Salt Atmosphere Operation Life NEW ENGLAND SEMICONDUCTOR 6 Lake Street Lawrence,MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 14-4.860-329 REV: -- 2N4300