Ordering number:ENN2158A PNP/NPN Epitaxial Planar Silicon Transistor 2SB1229/2SD1835 Driver Applications Applications Package Dimensions * Voltage regulators, relay drivers, lamp drivers, electrical equipment. unit:mm 2003B [2SB1229/2SD1835] Features 5.0 4.0 4.0 5.0 * Adoption of FBET, MBIT processes. * Large current capacity. * Low collector-to-emitter saturation voltage. * Fast switching time. 0.6 2.0 0.45 0.5 0.44 14.0 0.45 1 2 1 : Emitter 2 : Collector 3 : Base SANYO : NP 3 ( ) : 2SB1229 Specifications 1.3 1.3 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (-)60 V (-)50 V VEBO IC (-)6 V (-)2 A Collector Current (Pulse) ICP (-)3 A Collector Dissipation PC 0.75 150 W C -55 to +150 C Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Junction Temperature Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(-)50V, IE=0 (-)100 nA Emitter Cutoff Current IEBO VEB=(-)4V, IC=0 (-)100 nA hFE1 VCE=(-)2V, IC=(-)100mA 100* hFE2 VCE=(-)2V, IC=(-)1.5A VCE=(-)10V, IC=(-)50mA 40 DC Current Gain Gain-Bandwidth Product fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VCB=(-)10V, f=1MHz IC=(-)1A, IB=(-)50mA 560* 150 MHz 12(22) pF 0.15 0.4 V (-0.3) (-0.7) V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1003TN (KT)/92098HA (KT)/4107KI/0296AT, TS No.2158-1/5 2SB1229/2SD1835 Continued from preceding page. Parameter Symbol Base-to-Emitter Saturation Voltage Ratings Conditions min VBE(sat) IC=(-)1A, IB=(-)50mA V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON TIme V(BR)EBO ton Storage Time tstg Fall Time (-)0.9 max Unit (-)1.2 V (-)60 V (-)50 V IE=(-)10A, IC=0 (-)6 See specified Test Circuit See specified Test Circuit tf typ V 60(60) ns 550 ns (450) ns 30 ns 30 ns See specified Test Circuit * : The 2SB1229/2SD1835 are classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit IB1 OUTPUT IB2 INPUT RB VR RL 50 + 100F + 470F VBE= --5V VCC IC=10IB1= --10IB2=500mA, VCC=25V (For PNP, the polarity is reversed.) IC -- VCE --2.4 IC -- VCE 2.4 2SB1229 2SD1835 0mA 5 --5 0m A --1.6 --10mA --1.2 --8mA --6mA --0.8 --4mA --2mA --0.4 --0.4 --0.8 --1.2 --1.6 2SB1229 0.8 4mA 2mA IB=0 0 0.4 --3mA --2mA --400 --1mA 0.8 IB=0 0 0 --2 --4 --6 --8 --10 Collector-to-Emitter Voltage, VCE - V --12 ITR09362 1.6 2.0 2.4 ITR09361 IC -- VCE 1200 2SD1835 7mA 6mA 5mA 800 4mA 600 3mA 2mA 400 1mA 200 --200 1.2 Collector-to-Emitter Voltage, VCE - V Collector Current, IC - mA Collector Current, IC - mA --4mA --600 8mA 1000 --5mA --800 1.2 ITR09360 --6mA --1000 15mA --2.4 IC -- VCE --7mA 1.6 0 --2.0 Collector-to-Emitter Voltage, VCE - V --1200 25mA 0.4 IB=0 0 0 4 2.0 mA --20 Collector Current, IC - A Collector Current, IC - A --2.0 0mA 0 0 IB=0 2 4 6 8 10 Collector-to-Emitter Voltage, VCE - V 12 ITR09363 No.2158-2/5 2SB1229/2SD1835 IC -- VBE --2.4 2SB1229 VCE= --2V --0.4 0.4 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE - V 0 --1.2 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE - V 2SB1229 VCE= --2V 2SD1835 VCE=2V 7 5 1.2 ITR09365 hFE -- IC 1000 7 5 Ta=75C 3 DC Current Gain, hFE DC Current Gain, hFE 0 ITR09364 hFE -- IC 1000 0.8 25C --25C 25C --25C Ta= 75C --0.8 1.2 C --1.2 1.6 Ta=7 5 --1.6 25C --25C 2 100 7 Ta=75C 25C 3 2 --25C 100 7 5 5 3 3 2 2 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC - A 2 3 5 7 0.1 Gain-Bandwidth Product, fT - MHz 3 2 100 7 5 3 2 2 3 5 7 1.0 Collector Current, IC - A 2 3 ITR09367 fT -- IC 1000 2SB1229 VCE=10V 5 2SD1835 VCE=10V 7 5 3 2 100 7 5 3 2 10 2 3 5 7 --100 32 3 5 7 --1000 Collector Current, IC - mA 2 3 10 2 3 5 3 2 10 100 2 3 5 7 1000 2 3 ITR09369 2SD1835 f=1MHz 7 Output Capacitance, Cob -- pF 7 7 Cob -- VCB 100 2SB1229 f=1MHz 100 5 Collector Current, IC - mA ITR09368 Cob -- VCB 2 5 3 2 10 7 7 5 --1.0 2 ITR09366 7 10 --10 7 0.01 3 fT -- IC 1000 Gain-Bandwidth Product, fT - MHz 2SD1835 VCE=2V 2.0 Collector Current, IC - A Collector Current, IC - A --2.0 Output Capacitance, Cob -- pF IC -- VBE 2.4 2 3 5 7 2 3 5 7 --100 --10 Collector-to-Base Voltage, VCB -- V ITR09370 5 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 100 ITR09371 No.2158-3/5 2SB1229/2SD1835 VCE(sat) -- IC 5 2SB1229 IC / IB=20 2 2 1000 7 5 --1000 7 5 3 2 --100 7 5 5C Ta=7 C --25 3 2 C 25 3 2 100 7 5 25C Ta=75C 3 2 --25C 10 --10 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC - A 7 --1.0 2 3 7 0.01 5 3 2 25C 7 75C 5 5 7 0.1 2 3 5 7 Collector Current, IC - A 2 1.0 3 ITR09373 VBE(sat) -- IC 2SD1835 IC / IB=20 7 Base-to-Emitter Saturation Voltage, VBE (sat) - V 7 Ta= --25C 3 10 2SB1229 IC / IB=20 --1.0 2 ITR09372 VBE(sat) -- IC --10 5 3 2 1.0 25C Ta= --25C 7 75C 5 3 3 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC - A 7 --1.0 2 2 2SB1229 / 2SD1835 IC =2 1m A s 1.0 7 5 10 s 0m op era tio n ms 10 DC 3 2 0.1 7 5 3 2 0.01 7 5 3 Ta=25C Single pulse (For PNP, minus sign is omitted.) 5 7 1.0 2 3 5 7 10 2 2 ITR09374 3 Collector-to-Emitter Voltage, VCE - V 5 7 100 ITR09376 3 5 7 0.1 2 3 5 Collector Current, IC - A 7 1.0 2 3 ITR09375 PC -- Ta 1000 Collector Dissipation, PC - mW 3 ICP=3A 7 0.01 3 ASO 5 Collector Current, IC - A 2SD1835 IC / IB=20 3 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 3 Base-to-Emitter Saturation Voltage, VBE (sat) - V VCE(sat) -- IC 5 2SB1229 / 2SD1835 800 750 600 400 200 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 160 ITR09377 No.2158-4/5 2SB1229/2SD1835 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2003. Specifications and information herein are subject to change without notice. PS No.2158-5/5