GBU4D-E351 - VISHAY - Datasheet.Directory

GBU4A, GBU4B, GBU4D, GBU4G, GBU4J, GBU4K, GBU4M

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Revision: 05-Aug-15 1Document Number: 88614

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Glass Passivated Single-Phase Bridge Rectifier

FEATURES

• UL recognition file number E54214

• Ideal for printed circuit boards

• High surge current capability

• High case dielectric strength of 1500 VRMS

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for monitor, TV, printer, switching mode power supply,

adapter, audio equipment, and home appliances

applications.

MECHANICAL DATA

Case: GBU

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked on body

Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.

Recommended Torque: 5.7 cm-kg (5 inches-lbs)

Notes

(1) Unit case mounted on 1.6" x 1.6" x 0.06" thick (4.0 cm x 4.0 cm x 0.15 cm) aluminum plate

(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length

PRIMARY CHARACTERISTICS

Package GBU

IF(AV) 4.0 A

VRRM 50 V, 100 V, 200 V, 400 V, 600 V,

800 V, 1000 V

IFSM 150 A

IR5 μA

VF at IF = 4.0 A 1.0 V

TJ max. 150 °C

Diode variations In-line

Case Style GBU

- ~ ~ +

Case Style GBU

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M UNIT

Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V

Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V

Maximum DC blocking

voltage VDC 50 100 200 400 600 800 1000 V

Maximum average forward

rectified output current at

TC = 100 °C (1)

IF(AV)

4.0 A

TA = 40 °C (2) 3.0

Peak forward surge current single sine-wave

superimposed on rated load IFSM 150 A

Rating for fusing (t < 8.3 ms) I2t 93 A2s

Operating junction and storage temperature

range TJ, TSTG -55 to +150 °C

GBU4A, GBU4B, GBU4D, GBU4G, GBU4J, GBU4K, GBU4M

www.vishay.com Vishay General Semiconductor

Revision: 05-Aug-15 2Document Number: 88614

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Units case mounted on aIuminum plate heatsink

(2) Units mounted in free air, no heatsink on PCB, 0.5" x 0.5" (12 mm x 12 mm) copper pads, 0.375" (9.5 mm) lead length

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M UNIT

Maximum

instantaneous forward

voltage drop per diode

4.0 A VF 1.0 V

Maximum DC reverse

current at rated DC

blocking voltage per diode

TA = 25 °C

5.0

μA

TA = 125 °C 500

Typical junction 

capacitance per diode 4 V, 1 MHz CJ 57 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M UNIT

Typical thermal resistance RJA (2) 22 °C/W

RJC (1) 4.2

ORDERING INFORMATION

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

GBU4J-E3/45 3.857 45 20 Tube

GBU4J-E3/51 3.857 51 250 Paper tray

050 100 150

1.0

2.0

3.0

4.0

Temperature (°C)

Average Forward Output Current (A)

Heatsink Mounting, TC

1.6 x 1.6 x 0.06" Thickness

(4.0 x 4.0 x 0.15 cm) Al. Plate

P.C.B. Mounting, TA

0.47 x 0.47" (12 x 12 mm) Copper Pads

0.375" (9.5 mm) Lead Length

60 Hz Resistive or Inductive Load

110 100

100

150

1.0 Cycle

TJ = TJ max.

Single Sine-Wave

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

GBU4A, GBU4B, GBU4D, GBU4G, GBU4J, GBU4K, GBU4M

www.vishay.com Vishay General Semiconductor

Revision: 05-Aug-15 3Document Number: 88614

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.01

0.1

100

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

TJ = 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

0.01

0.1

100

1000

10 20 30 40 50 60 70 80 90 100

Instantaneous Reverse Current (μA)

Percent of Rated Peak Reverse Voltage (%)

TA= 150 °C

TA= 125 °C

TA= 100 °C

TA= 25 °C

100

1000

0.1 1 10 100

Junction Capacitance (pF)

Reverse Voltage (V)

TJ= 25 °C

f = 1.0 MHz

Vsi

= 50 mV

0.01 0.1 110 100

0.1

100

t - Heating Time (s)

Transient Thermal Impedance (°C/W)

Case Type GBU

Polarity shown on front side of case, positive lead by beveled corner

0.125 (3.2) x 45°

Chamfer

0.085 (2.16)

0.065 (1.65)

0.020 R (TYP.)

0.880 (22.3)

0.860 (21.8)

0.160 (4.1)

0.140 (3.5)

0.075

(1.9) R

0.080 (2.03)

0.060 (1.52)

0.050 (1.27)

0.040 (1.02)

0.080 (2.03)

0.065 (1.65) 0.210 (5.33)

0.190 (4.83)

0.140 (3.56)

0.130 (3.30)

9° TYP.

5° TYP.

0.085 (2.16)

0.075 (1.90)

0.026 (0.66)

0.020 (0.51)

0.310 (7.9)

0.290 (7.4)

0.740 (18.8)

0.720 (18.3)

0.710 (18.0)

0.690 (17.5)

0.100 (2.54)

0.085 (2.16)

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Revision: 01-Jan-2019 1Document Number: 91000

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