M PL IA N T TISP4070J3BJ THRU TISP4395J3BJ *R oH S CO BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxJ3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region -Precise and Stable Voltage -Low Voltage Overshoot Under Surge SMB Package (Top View) Designed for Transformer Center Tap (Ground Return) Overvoltage Protection -Enables GR-1089-CORE Compliance -High Holding Current Allows Protection of Data Lines with d.c. Power Feed R V V 58 70 TISP4080J3BJ 65 80 TISP4095J3BJ 75 95 T Device Symbol T V(BO) VDRM TISP4070J3BJ 2 MD-SMB-004-a Can be Used to Protect Rugged Modems Designed for Exposed Applications Exceeding TIA-968-A Device Name 1 TISP4115J3BJ 90 115 TISP4125J3BJ 100 125 TISP4145J3BJ 120 145 TISP4165J3BJ 135 165 TISP4180J3BJ 145 180 TISP4200J3BJ 155 200 Wave Shape Standard TISP4219J3BJ 180 219 2/10 GR-1089-CORE 1000 800 R SD-TISP4xxx-001-a Rated for International Surge Wave Shapes IPPSM A TISP4250J3BJ 190 250 8/20 IEC 61000-4-5 TISP4290J3BJ 220 290 10/160 TIA-968-A 400 TISP4350J3BJ 275 350 10/700 ITU-T K.20/21/45 350 TISP4395J3BJ 320 395 10/560 TIA-968-A 250 10/1000 GR-1089-CORE 200 .................................................UL Recognized Component Description The range of TISP4xxxJ3BJ devices are designed to limit overvoltages on telecom lines. The TISP4xxxJ3BJ is primarily designed to address GR-1089-CORE compliance on data transmission lines with d.c. power feeding. When overvoltage protection is applied to transformer coupled lines from the transformer center tap to ground, the total ground return current can be 200 A, 10/1000 and 1000 A, 2/10. The high 150 mA holding current is set above common d.c. feed system levels to allow the TISP4xxxJ3BJ to reset following a disturbance. These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device switches into a low voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the holding current, IH, level the devices switches off and restores normal system operation. How to Order Device Package Carrier Order As Marking Code Std. Qty. TISP4xxxJ3BJ SMB (DO-214AA) Embossed Tape Reeled TISP4xxxJ3BJR-S 4xxxJ3 3000 Insert xxx value corresponding to device name. *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. JULY 2003 - REVISED NOVEMBER 2013 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. TISP4xxxJ3BJ Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted) Rating Symbol Value U nit VDRM 58 65 75 90 100 120 135 145 155 180 190 220 275 320 V IPPSM 1000 800 400 370 350 350 250 200 A ITSM 50 A diT/dt 800 A/s TJ -40 to +150 C Tstg -65 to +150 C `4070J3BJ `4080J3BJ `4095J3BJ `4115J3BJ `4125J3BJ `4145J3BJ `4165J3BJ `4180J3BJ `4200J3BJ `4219J3BJ `4250J3BJ `4290J3BJ `4350J3BJ `4395J3BJ Repetitive peak off-state voltage Non-repetitive peak impulse current (see Notes 1 and 2) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 svoltage wave shape) 10/160 s (TIA-968-A, 10/160 s voltage wave shape) 4/250 s (ITU-T K.20/21, 10/700 s voltage waveshape, simultaneous) 5/310 s (ITU-T K.20/21, 10/700 s voltage wave shape, single) 5/320 s (TIA-968-A, 9/720 s voltage waveshape, single) 10/560 s (TIA-968-A, 10/560 s voltage wave shape) 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 1 and 2) 20 ms, 50 Hz (full sine wave) Initial rate of rise of on-state current. Linear current ramp. Maximum ramp value < 50 A Junction temperature Storage temperature range NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 C. 2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its initial conditions. Electrical Characteristics, TA = 25 C (Unless Otherwise Noted) Parameter IDRM V(BO) Test Conditions Repetitive peak off-state current AC Breakover voltage Min Typ Max Unit VD = VDRM TA = 25 C TA = 85 C 5 10 A dv/dt = 250 V/ms, RSOURCE = 300 `4070J3BJ `4080J3BJ `4095J3BJ `4115J3BJ `4125J3BJ `4145J3BJ `4165J3BJ `4180J3BJ `4200J3BJ `4219J3BJ `4250J3BJ `4290J3BJ `4350J3BJ `4395J3BJ 70 80 95 115 125 145 165 180 200 219 250 290 350 395 V JULY 2003 - REVISED NOVEMBER 2013 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. TISP4xxxJ3BJ Overvoltage Protector Series Electrical Characteristics, TA = 25 C (Unless Otherwise Noted) Parameter V(BO) Ramp breakover voltage I(BO) Breakover current IH Holding current dv/dt Critical rate of rise of off-state voltage ID Off-state current Test Conditions dv/dt = 250 V/ms, RSOURCE = 300 900 `4125J3BJ thru `4219J3BJ 800 `4250J3BJ thru `4395J3BJ 600 150 Linear voltage ramp Maximum ramp value < 0.85VDRM 600 5 V D = 50 V f = 1 MHz, Vd = 1 V rms, VD = -2 V f = 1 MHz, Vd = 1 V rms, VD = -100 V (see Note 3) Unit V mA mA kV/s TA = 85 C f = 1 MHz, Vd = 1 V rms, VD = -50 V NOTE: `4070J3BJ thru `4115J3BJ IT = 5 A, di/dt = 30 mA/ms f = 1 MHz, Vd = 1 V rms, VD = -1 V Off-state capacitance Typ Max 77 88 104 125 135 156 177 192 212 231 263 303 364 409 dv/dt 1000 V/s, Linear voltage ramp, Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A f = 1 MHz, Vd = 1 V rms, VD = 0 CO Min `4070J3BJ `4080J3BJ `4095J3BJ `4115J3BJ `4125J3BJ `4145J3BJ `4165J3BJ `4180J3BJ `4200J3BJ `4219J3BJ `4250J3BJ `4290J3BJ `4350J3BJ `4395J3BJ 10 A `4070J3BJ thru `4115J3BJ 195 235 `4125J3BJ thru `4219J3BJ 120 145 `4250J3BJ thru `4395J3BJ 105 125 `4070J3BJ thru `4115J3BJ 180 215 `4125J3BJ thru `4219J3BJ 110 132 `4250J3BJ thru `4395J3BJ 95 115 `4070J3BJ thru `4115J3BJ 165 200 `4125J3BJ thru `4219J3BJ 100 120 `4250J3BJ thru `4395J3BJ 90 105 `4070J3BJ thru `4115J3BJ 85 100 `4125J3BJ thru `4219J3BJ 50 60 `4250J3BJ thru `4395J3BJ 42 50 `4125J3BJ thru `4219J3BJ 40 50 `4250J3BJ thru `4395J3BJ 35 40 Typ Max U nit 90 C/W pF 3. To avoid possible clipping, the TISP4125J3BJ is tested with VD = -98 V. Thermal Characteristics Parameter RJA NOTE: Junction to ambient thermal resistance Test Conditions Mi n EIA/JESD51-3 PCB, IT = ITSM(1000) (see Note 4) 4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. JULY 2003 - REVISED NOVEMBER 2013 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. TISP4xxxJ3BJ Overvoltage Protector Series Parameter Measurement Information +i I PPSM Quadrant I Switching Characteristic ITSM ITRM IT V(BO) VT I(BO) IH V (BR)M V DRM -v I(BR) V (BR) I(BR) IDRM VD ID ID VD IDRM +v V DRM V (BR)M V (BR) IH I(BO) V(BO) VT IT ITRM ITSM Quadrant III Switching Characteristic I PPSM -i PM-TISP4xxx-001-a Figure 1. Voltage-Current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal JULY 2003 - REVISED NOVEMBER 2013 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. TISP4xxxJ3BJ Overvoltage Protector Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 TC4JAG 1.15 NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4JAF V D = 50 V Normalized Breakover Voltage |I D| - Off-State Current - A 10 1 0*1 0*01 1.10 1.05 1.00 0.95 0.90 0*001 -25 0 25 50 75 100 125 TJ - Junction Temperature - C -25 150 0 25 50 75 100 125 TJ - Junction Temperature - C Figure 2. 2.0 150 Figure 3. NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4JAD 1 NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE TC4JABB 0.9 Capacitance Normalized to VD = 0 Normalized Holding Current TJ = 25 C V d = 1 Vrms 0.8 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -25 0 25 50 75 100 125 TJ - Junction Temperature - C Figure 4. 150 0.7 0.6 0.5 0.4 0.3 0.2 0.5 1 2 3 5 10 20 30 50 V D - Off-state Voltage - V Figure 5. JULY 2003 - REVISED NOVEMBER 2013 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 100 150 TISP4xxxJ3BJ Overvoltage Protector Series Rating and Thermal Characteristics V DRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE TI4JAA 40 V GEN = 600 Vrms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C 30 20 0.99 0.98 15 10 9 8 7 6 5 0.97 0.96 0.95 4 '4070J3BJ thru '4115J3BJ '4125J3BJ thru '4219J3BJ 0.94 3 2 0*1 TI4JADCa 1.00 Derating Factor ITSM(t) - Non-Repetitive Peak On-State Current - A NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION '4250J3BJ thru '4395J3BJ 1 10 100 t - Current Duration - s Figure 6. 1000 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TA(MIN) - Minimum Ambient Temperature - C Figure 7. JULY 2003 - REVISED NOVEMBER 2013 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. TISP4xxxJ3BJ Overvoltage Protector Series Applications Information Protection Polarity Bridge Ring Detector F1 R High current Fuse Relay C1 R1 C2 D1 D2 Th1 D3 D4 D5 D6 Hook Switch C3 DC Sink T TISP 4350J3BJ R2 T1 Signal D7 OC1 Isolation Barrier AI4MMABB Figure 8. Typical Application Circuit F1a Tx T F1b R TISP4350J3BJ F2a d.c. feed Rx T F2b R TISP4350J3BJ F1 & F2 = B1250T AI4MMAB Figure 9. Typical Application Circuit "TISP" is a registered trademark of Bourns Ltd., a Bourns Company, in the United States and other countries, except that "TISP" is a registered trademark of Bourns, Inc. in China."Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries. JULY 2003 - REVISED NOVEMBER 2013 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Bourns: TISP4395J3BJ TISP4290J3BJ TISP4350J3BJ TISP4395J3BJ-S TISP4350J3BJ-S TISP4290J3BJ-S TISP4395J3BJR-S TISP4219J3BJR-S TISP4115J3BJR-S TISP4095J3BJR-S TISP4165J3BJR-S TISP4250J3BJR-S TISP4080J3BJR-S TISP4180J3BJR-S TISP4145J3BJR-S TISP4070J3BJR-S TISP4350J3BJR-S TISP4290J3BJRS TISP4200J3BJR-S TISP4125J3BJR-S