JULY 2003 - REVISED NOVEMBER 2013
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
TISP4xxxJ3BJ Overvoltage Protector Series
TISP4070J3BJ THRU TISP4395J3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Ion-Implanted Breakdown Region
-Precise and Stable Voltage
-Low Voltage Overshoot Under Surge
Designed for Transformer Center Tap (Ground Return)
Overvoltage Protection
-Enables GR-1089-CORE Compliance
-High Holding Current Allows Protection of Data Lines
with d.c. Power Feed
Can be Used to Protect Rugged Modems Designed for Exposed
Applications Exceeding TIA-968-A
The range of TISP4xxxJ3BJ devices are designed to limit overvoltages on telecom lines. The TISP4xxxJ3BJ is primarily designed to address
GR-1089-CORE compliance on data transmission lines with d.c. power feeding. When overvoltage protection is applied to transformer coupled
lines from the transformer center tap to ground, the total ground return current can be 200 A, 10/1000 and 1000 A, 2/10. The high 150 mA
holding current is set above common d.c. feed system levels to allow the TISP4xxxJ3BJ to reset following a disturbance.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM
are limited and will not exceed the breakover voltage, V(BO), level. If suffi cient current fl ows due to the overvoltage, the device switches into a
low voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the
holding current, IH, level the devices switches off and restores normal system operation.
Rated for International Surge Wave Shapes
.................................................UL Recognized Component
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Device Package Carrier Marking Code Std. Qty.
TISP4xxxJ3BJ SMB (DO-214AA) Embossed Tape Reeled TISP4xxxJ3BJR-S 4xxxJ3 3000
Insert xxx value corresponding to device name.
Order As
*RoHS COMPLIANT
SMB Package (Top View)
Device Symbol
Description
How to Order
Device Name VDRM
V
V(BO)
V
TISP4070J3BJ 58 70
TISP4080J3BJ 65 80
TISP4095J3BJ 75 95
TISP4115J3BJ 90 115
TISP4125J3BJ 100 125
TISP4145J3BJ 120 145
TISP4165J3BJ 135 165
TISP4180J3BJ 145 180
TISP4200J3BJ 155 200
TISP4219J3BJ 180 219
TISP4250J3BJ 190 250
TISP4290J3BJ 220 290
TISP4350J3BJ 275 350
TISP4395J3BJ 320 395
MD-SMB-004-a
TR1 2
T
R
SD-TISP4xxx-001-a
Wave Shape Standard IPPSM
A
2/10 GR-1089-CORE 1000
8/20 IEC 61000-4-5 800
10/160 TIA-968-A 400
10/700 ITU-T K.20/21/45 350
10/560 TIA-968-A 250
10/1000 GR-1089-CORE 200
JULY 2003 - REVISED NOVEMBER 2013
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
tidnoC tseTretemaraP tinUxaMpyTniMsnoi
IDRM
Repetitive peak
off-state current VD = VDRM
TA = 25 °C
TA = 85 °C
±5
±10 µA
V(BO) AC Breakover voltage dv/dt = ±250 V/ms, RSOURCE = 300 Ω
‘4070J3BJ
‘4080J3BJ
‘4095J3BJ
‘4115J3BJ
‘4125J3BJ
‘4145J3BJ
‘4165J3BJ
‘4180J3BJ
‘4200J3BJ
‘4219J3BJ
‘4250J3BJ
‘4290J3BJ
‘4350J3BJ
‘4395J3BJ
±70
±80
±95
±115
±125
±145
±165
±180
±200
±219
±250
±290
±350
±395
V
tinUeulaVlobmySgnitaR
Repetitive peak off-state voltage
‘4070J3BJ
‘4080J3BJ
‘4095J3BJ
‘4115J3BJ
‘4125J3BJ
‘4145J3BJ
‘4165J3BJ
‘4180J3BJ
‘4200J3BJ
‘4219J3BJ
‘4250J3BJ
‘4290J3BJ
‘4350J3BJ
‘4395J3BJ
VDRM
±58
±65
±75
±90
±100
±120
±135
±145
±155
±180
±190
±220
±275
±320
V
Non-repetitive peak impulse current (see Notes 1 and 2)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 µsvoltage wave shape)
10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)
4/250 µs (ITU-T K.20/21, 10/700 µs voltage waveshape, simultaneous)
5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape, single)
5/320 µs (TIA-968-A, 9/720 µs voltage waveshape, single)
10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
IPPSM
±1000
±800
±400
±370
±350
±350
±250
±200
A
Non-repetitive peak on-state current (see Notes 1 and 2)
ITSM 50 A
20 ms, 50 Hz (full sine wave)
Initial rate of rise of on-sta idA 05 < eulav pmar mumixaM .pmar tnerruc raeniL .tnerruc et T/dt 800 A/µs
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
TISP4xxxJ3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
JULY 2003 - REVISED NOVEMBER 2013
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Thermal Characteristics
V(BO) Ramp breakover voltage
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘4070J3BJ
‘4080J3BJ
‘4095J3BJ
‘4115J3BJ
‘4125J3BJ
‘4145J3BJ
‘4165J3BJ
‘4180J3BJ
‘4200J3BJ
‘4219J3BJ
‘4250J3BJ
‘4290J3BJ
‘4350J3BJ
‘4395J3BJ
±77
±88
±104
±125
±135
±156
±177
±192
±212
±231
±263
±303
±364
±409
V
I(BO) Breakover current dv/dt = ±250 V/ms, RSOURCE =300Ω
‘4070J3BJ thru ‘4115J3BJ ±900
mA‘4125J3BJ thru ‘4219J3BJ ±800
‘4250J3BJ thru ‘4395J3BJ ±600
IHHolding current ITAm006±051±sm/Am03±=td/id ,A5±=
dv/dt Critical rate of rise of
off-state voltage
Linear voltage ramp
Maximum ramp value < 0.85VDRM
±5 kV/µs
IDOff-state current VDTV 05± = A = 85 °C ±10 µA
COOff-state capacitance
f = 1 MHz, Vd = 1 V rms, VD = 0
‘4070J3BJ thru ‘4115J3BJ 195 235
pF
‘4125J3BJ thru ‘4219J3BJ 120 145
‘4250J3BJ thru ‘4395J3BJ 105 125
f = 1 MHz, Vd = 1 V rms, VD = -1 V
‘4070J3BJ thru ‘4115J3BJ 180 215
‘4125J3BJ thru ‘4219J3BJ 110 132
‘4250J3BJ thru ‘4395J3BJ 95 115
f = 1 MHz, Vd = 1 V rms, VD = -2 V
‘4070J3BJ thru ‘4115J3BJ 165 200
‘4125J3BJ thru ‘4219J3BJ 100 120
‘4250J3BJ thru ‘4395J3BJ 90 105
f = 1 MHz, Vd = 1 V rms, VD = -50 V
‘4070J3BJ thru ‘4115J3BJ 85 100
‘4125J3BJ thru ‘4219J3BJ 50 60
‘4250J3BJ thru ‘4395J3BJ 42 50
f = 1 MHz, Vd = 1 V rms, VD = -100 V
(see Note 3)
‘4125J3BJ thru ‘4219J3BJ 40 50
‘4250J3BJ thru ‘4395J3BJ 35 40
NOTE: 3. To avoid possible clipping, the TISP4125J3BJ is tested with VD = -98 V.
tidnoC tseTretemaraP tinUxaMpyTniMsnoi
tinUxaMpyTniMsnoitidnoC tseTretemaraP
RθJA Junction to ambient thermal resistance EIA/JESD51-3 PCB, IT = ITSM(1000)
(see Note 4) 90 °C/W
NOTE: 4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JULY 2003 - REVISED NOVEMBER 2013
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Parameter Measurement Information
-v
I(BR)
V(BR)
V(BR)M
VDRM
IDRM
VD
IH
IT
VT
ITRM
IPPSM
V(BO)
I(BO)
ID
Quadrant I
Switching
Characteristic
+v
+i
V(BO)
I(BO)
I(BR)
V(BR)
V(BR)M
VDRM
IDRM
VD
ID
IH
IT
VT
ITRM
IPPSM
-i
Quadrant III
Switching
Characteristic
ITSM
ITSM
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
PM-TISP4xxx-001-a
JULY 2003 - REVISED NOVEMBER 2013
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Typical Characteristics
.3 erugiF .2 erugiF
.5 erugiF .4 erugiF
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
|ID| - Off-State Current - µA
0·001
0·01
0·1
1
10
100 TC4JAG
VD = ±50 V
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Breakover Voltage
0.90
0.95
1.00
1.05
1.10
1.15 TC4JAF
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Holding Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4JAD
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
VD - Off-state Voltage - V
0.5 1 2 3 5 10 20 30 50 100 150
Capacitance Normalized to VD = 0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
TJ = 25 °C
Vd = 1 Vrms
TC4JABB
JULY 2003 - REVISED NOVEMBER 2013
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Rating and Thermal Characteristics
.7 erugiF .6 erugiF
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
t - Current Duration - s
0·1 1 10 100 1000
ITSM(t) - Non-Repetitive Peak On-State Current - A
2
3
4
5
6
7
8
9
15
20
30
40
10
TI4JAA
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TA(MIN) - Minimum Ambient Temperature - °C
-35 -25 -15 -5 5 15 25-40 -30 -20 -10 0 10 20
Derating Factor
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1.00 TI4JADCa
'4070J3BJ thru '4115J3BJ
'4125J3BJ thru '4219J3BJ
'4250J3BJ thru '4395J3BJ
JULY 2003 - REVISED NOVEMBER 2013
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
TISP4xxxJ3BJ Overvoltage Protector Series
“TISP” is a registered trademark of Bourns Ltd., a Bourns Company, in the United States and other countries, except that “TISP” is a registered trademark of Bourns, Inc. in China.“Bourns” is
a registered trademark of Bourns, Inc. in the U.S. and other countries.
Applications Information
Figure 8. Typical Application Circuit
Figure 9. Typical Application Circuit
AI4MMABB
R
T
Ring
Detector
Hook
Switch
Polarity
Bridge
Relay
DC
Sink Signal
C1
TISP
4350J3BJ
Th1
High current
Fuse
F1
R1
D5
D6
D7
OC1
Protection
D1 D2
D3 D4
Isolation Barrier
T1
C2
R2
C3
AI4MMAB
Tx
TISP4350J3BJ
T
F1a
R
F1b
Rx
T
F2a
R
F2b
F1 & F2 = B1250T
TISP4350J3BJ
d.c.
feed
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Bourns:
TISP4395J3BJ TISP4290J3BJ TISP4350J3BJ TISP4395J3BJ-S TISP4350J3BJ-S TISP4290J3BJ-S
TISP4395J3BJR-S TISP4219J3BJR-S TISP4115J3BJR-S TISP4095J3BJR-S TISP4165J3BJR-S TISP4250J3BJR-S
TISP4080J3BJR-S TISP4180J3BJR-S TISP4145J3BJR-S TISP4070J3BJR-S TISP4350J3BJR-S TISP4290J3BJR-
S TISP4200J3BJR-S TISP4125J3BJR-S
