DATA SH EET
Product specification 2003 Aug 12
DISCRETE SEMICONDUCTORS
PBSS3540M
40 V, 0.5 A
PNP low VCEsat (BISS) transistor
M3D883
BOTTOM VIEW
2003 Aug 12 2
Philips Semiconductors Product specification
40 V, 0.5 A
PNP low VCEsat (BISS) transistor PBSS3540M
FEATURES
•Low collector-emitter saturation voltage VCEsat
•High collector current capability IC and ICM
•High efficiency leading to reduced heat generation
•Reduced printed-circuit board requirements.
APPLICATIONS
•Power management:
– DC-DC converter
– Supply line switching
– Battery charger
– LCD backlighting.
•Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load drivers (e.g. relays, buzzers and
motors).
DESCRIPTION
Low VCEsat PNP transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: PBSS2540M.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
MAM469
2
1
3
Bottom view 2
3
1
Fig.1 Simplified outline (SOT883) and symbol.
MARKING
TYPE NUMBER MARKING CODE
PBSS3540M DA
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage −40 V
ICcollector current (DC) −500 mA
ICM peak collector current −1A
R
CEsat equivalent on-resistance <700 mΩ
2003 Aug 12 3
Philips Semiconductors Product specification
40 V, 0.5 A
PNP low VCEsat (BISS) transistor PBSS3540M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm
copper strip line.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm
copper strip line.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
4. Operated under pulsed conditions: duty cycle δ≤20%, pulse width tp≤30 ms.
Soldering
Reflow soldering is the only recommended soldering method.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −−40 V
VCEO collector-emitter voltage open base −−40 V
VEBO emitter-base voltage open collector −−6V
I
Ccollector current (DC) notes 1 and 2 −−500 mA
ICM peak collector current −−1A
I
BM peak base current −−100 mA
Ptot total power dissipation Tamb ≤25 °C; notes 1 and 2 −250 mW
Tamb ≤25 °C; note 1 and 3 −430 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to
ambient in free air; notes 1 and 2 500 K/W
in free air; notes 1, 3 and 4 290 K/W
2003 Aug 12 4
Philips Semiconductors Product specification
40 V, 0.5 A
PNP low VCEsat (BISS) transistor PBSS3540M
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp≤300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB =−30 V; IE=0 −−−100 nA
VCB =−30 V; IE= 0; Tj= 150 °C−−−50 µA
IEBO emitter-base cut-off current VEB =−5 V; IC=0 −−−100 nA
hFE DC current gain VCE =−2 V; IC=−10 mA 200 −−
V
CE =−2 V; IC=−100 mA; note 1 150 −−
V
CE =−2 V; IC=−500 mA; note 1 40 −−
V
CEsat collector-emitter saturation voltage IC=−10 mA; IB=−0.5 mA −−−50 mV
IC=−100 mA; IB=−5mA −−−130 mV
IC=−200 mA; IB=−10 mA −−−200 mV
IC=−500 mA; IB=−50 mA; note 1 −−−350 mV
RCEsat equivalent on-resistance IC=−500 mA; IB=−50 mA; note 1 −440 <700 mΩ
VBEsat base-emitter saturation voltage IC=−500 mA; IB=−50 mA; note 1 −−−1.2 V
VBEon base-emitter turn-on voltage VCE =−2 V; IC=−100 mA; note 1 −−−1.1 V
fTtransition frequency IC=−100 mA; VCE =−5V;
f = 100 MHz 100 300 −MHz
Cccollector capacitance VCB =−10 V; IE=I
e= 0; f = 1 MHz −−10 pF
2003 Aug 12 5
Philips Semiconductors Product specification
40 V, 0.5 A
PNP low VCEsat (BISS) transistor PBSS3540M
handbook, halfpage
0
200
400
600
800
MLE202
hFE
IC (mA)
−1−10 −102
−10−1−103
(1)
(2)
(3)
Fig.2 DC current gain as a function of collector
current; typical values.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =−55 °C.
VCE =−2V.
handbook, halfpage
0
−800
−1200
−400
MLE203
−10−1−1−10 IC (mA)
VBE
(mV)
−102−103
(2)
(1)
(3)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
(1) Tamb =−55 °C.
(2) Tamb =25°C.
(3) Tamb = 150 °C.
VCE =−2V.
handbook, halfpage
−103
−102
−1
MLE204
−10−1−1−10 IC (mA)
VCEsat
(mV)
−102−103
(1)
(3)
(2)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =−55 °C.
IC/IB= 20.
handbook, halfpage
0
−800
−1200
−400
MLE205
−10−1−1−10 IC (mA)
VBEsat
(mV)
−102−103
(1)
(3)
(2)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =−55 °C.
IC/IB= 20.
2003 Aug 12 6
Philips Semiconductors Product specification
40 V, 0.5 A
PNP low VCEsat (BISS) transistor PBSS3540M
handbook, halfpage
0
(1)
IC
(mA)
VCE (V)
−1200
−800
−400
0−1−5
−2−3−4
MLE200
(10)
(3)
(5)
(7)
(2)
(4)
(6)
(8)
(9)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) IB=−40 mA.
(2) IB=−36 mA.
(3) IB=−32 mA.
(4) IB=−28 mA.
(5) IB=−24 mA.
(6) IB=−20 mA.
(7) IB=−16 mA.
(8) IB=−12 mA.
(9) IB=−8 mA.
(10) IB=−4 mA.
Tamb =25°C.
handbook, halfpage
103
102
10
1
10−1
MLE201
−10−1−1−10 IC (mA)
RCEsat
(Ω)
−102−103
(1)
(3)
(2)
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
IC/IB= 20.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =−55 °C.
2003 Aug 12 7
Philips Semiconductors Product specification
40 V, 0.5 A
PNP low VCEsat (BISS) transistor PBSS3540M
PACKAGE OUTLINE
UNIT A1
max.
A(1) bb
1e
1
eLL
1
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.50
0.46 0.20
0.12 0.55
0.47
0.03 0.62
0.55 0.35 0.65
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
0.30
0.22
0.30
0.22
SOT883 SC-101 03-02-05
03-04-03
DE
1.02
0.95
L
E
2
3
1
b
b1
A1
A
D
L1
0 0.5 1 mm
scale
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883
e
e1
2003 Aug 12 8
Philips Semiconductors Product specification
40 V, 0.5 A
PNP low VCEsat (BISS) transistor PBSS3540M
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2003 SCA75
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Printed in The Netherlands 613514/01/pp9 Date of release: 2003 Aug 12 Document order number: 9397 750 11561
