©1995
DATA SHEET
MOS FIELD EFFECT TRANSIST OR
Document No. P10567EJ2V0DS00 (2nd edition)
(Previous No. TD-2263)
Date Published August 1995 P
Printed in Japan
3SK176A
FEATURES
• High Power Gain: GPS = 24 dB TYP. (f = 470 MHz)
• Low Noise Figure: NF = 2.0 dB TYP. (f = 470 MHz)
NF = 1.0 dB TYP. (f = 55 MHz)
• Automatically Mounting: Embossed Type Taping
• Suitable for use as RF amplifier and Mixer in CATV tuner.
• Small Package: 4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage VG1S ±8 (±10)*V
Gate2 to Source Voltage VG2S ±8 (±10)*V
Drain Current ID25 mA
Total Power Dissipation PD200 mW
Channel Temperature Tch 125 °C
Storage Temperature Tstg –55 to +125 °C
* RL ≥ 10 kΩ
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PACKAGE DIMENSIONS
(Unit: mm)
RF AMP. AND MIXER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
2.8
+0.2
–0.1
1.5
+0.2
–0.1
0.4
+0.1
–0.05
0.4
+0.1
–0.05
0.6
+0.1
–0.05
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.16
+0.1
–0.06
0.8
0 to 0.1
5° 5°
5° 5°
2.9±0.2
(1.8)
(1.9)
0.950.85
12
43
1. Source
2. Drain
3. Gate2
4. Gate1
1989
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain to Source Breakdown BVDSX 18 V VG1S = VG2S = –2 V, ID = 10
µ
A
Voltage
Drain Current IDSX 1.0 10 mA VDS = 5 V, VG1S = 0.75 V, VG2S = 4 V
Gate1 to Source Cutoff Voltage
VG1S(off) 0 +1.0 V VDS = 6 V, VG2S = 3 V, ID = 10
µ
A
Gate2 to Source Cutoff Voltage
VG2S(off) 0 +1.0 V VDS = 6 V, VG1S = 3 V, ID = 10
µ
A
Gate1 Reverse Current IG1SS ±20 nA VDS = 0, VG2S = 0, VG1S = ±10 V
Gate2 Reverse Current IG2SS ±20 nA VDS = 0, VG1S = 0, VG2S = ±10 V
Forward Transfer Admittance | yfs | 22 25.5 mS VDS = 5 V, VG2S = 4 V, ID = 10 mA
f = 1 kHz
Input Capacitance Ciss 2.2 2.7 3.2 pF
Output Capacitance Coss 1.3 1.6 1.9 pF
Reverse Transfer Capacitance Crss 0.015 0.03 pF
Power Gain GPS 21.0 24.0 dB
Noise Figure 1 NF1 2.0 3.5 dB
Noise Figure 2 NF2 1.0 2.5 dB
IDSX Classification
Class U87/UHG*U88/UHH*
Marking U87 U88
IDSX (mA) 1.0 to 6.0 4.0 to 10.0
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f = 1 MHz
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f = 470 MHz
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f = 55 MHz
* Old Specification/New Specification
3SK176A
2
TYPICAL CHARACTERISTICS (TA = 25 °C)
30
|y
fs
| – Forward Transfer Admittance – mS
V
G1S
– Gate 1 to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
40
10
0
P
T
– Total Power Dissipation – mW
T
A
– Ambient Temperature – °C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
1250
|y
fs
| – Forward Transfer Admittance – mS
I
D
– Drain Current – mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
40
20
20100
I
D
– Drain Current – mA
V
G1S
– Gate 1 to Source Voltage – V
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
20
10
2.01.00
I
D
– Drain Current – mA
V
DS
– Drain to Source Voltage – V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
20100
C
iss
– Input Capacitance – pF
V
G2S
– Gate 2 to Source Voltage – V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
5.0
4.0
200
400
300
2.0
25 50 10075
20
1.0
V
DS
= 6 V
f = 1 kHz
V
DS
= 6 V
f = 1 kHz V
DS
= 6 V
f = 1 MHz
1.0
2.0
3.0
4.0
0 1.0 2.0 3.0
0
–1.0
V
DS
= 6 V
8
6
4
2
V
G2S
= 4 V
4 V
2 V
1 V
3 V
V
G2S
= 5 V
3 V
V
G2S
= 2 V
I
D
= 10 mA at V
G2S
= 3 V
I
D
= 5 mA at V
G2S
= 3 V
5 V
2 V
4 V
3 V
V
G2S
= 1 V
0.2 V
0.4 V
0.6 V
V
G1S
= 0.8 V
3SK176A
3
C
OSS
– Output Capacitance – pF
V
G2S
– Gate 2 to Source Voltage – V
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE 
2.0
G
PS
– Power Gain – dB
V
G2S
– Gate 2 to Source Voltage – V
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
20
8.0
V
DS
= 6 V
f = 1 MHz
–20
–10
0
10
0 2.0 4.0 6.0–2.0
1.0
0 4.01.0 2.0 3.0
0
–1.0
10
5
0
NF – Noise Figure – dB
I
D
= 10 mA at V
G2S
= 3 V
I
D
= 5 mA at V
G2S
= 3 V
f = 470 MHz
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 3 V)
NF
G
PS
NF TEST CIRCUIT AT f = 55 MHz
2.2 kΩ
1 000 pF
47 k
Ω
1 000 pF
3.3 k
Ω
1 500 pF
INPUT
50 Ω
V
G1S
47 kΩ27 pF
27 pF
V
G2S
V
DS
RFC
Ferrite
Beads 1 500 pF
3.3 kΩOUTPUT
50 Ω
3SK176A
4
GPS AND NF TEST CIRCUIT AT f = 470 MHz
V
G2S
1 000 pF
22 kΩ
1 000 pF Ferrite Beads
40 pF OUTPUT
1 000 pF
15 pF15 pF
1 000 pF
INPUT 40 pF
50 Ω50 Ω
1 000 pF
L
3
L
2
L
1
22 k
Ω
1 000 pF
V
G1S
V
DS
L
1
: 1.2 mm U.E.W 5 mm 1T
L
2
: 1.2 mm U.E.W 5 mm 1T
L
3
: REC 2.2 H
φ
φ φ
φ
µ
3SK176A
5
[MEMO]
2
3SK176A
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device before using it in a particular application.
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If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11