Philips Semiconductors Objective specification Three quadrant triacs BTA208 series D, E and F guaranteed commutation GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated. high commutation SYMBOL | PARAMETER MAX. | MAX. | MAX. | UNIT triacs in a plastic envelope intended for use in motor contro! circuits or with BTA208-| 500D | 600D - other highly inductive loads. These BTA208-] 500E |.600E | 800E devices balance the requirements of BTA208-] 500F | 600F | 800F commutation performance and gate Vor Repetitive peak 500 } 600 | 800 Vv sensitivity. The "sensitive gate E leans) off-state voltages series and logic level D series are lrsm RMS on-state current 8 8 8 A intended for interfacing with low power Non-repetitive peak 65 65 65 A drivers, including micro controllers. on-state current PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 ]main terminal 1 4 T2 T1 2 {main terminal 2 3 | gate tab | main terminal 2 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL |PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 Voam Repetitive peak off-state - 500' 600 800 Vv voltages lems) RMS on-state current full sine wave; - 8 A Tw S 102 C bism Non-repetitive peak full sine wave; on-state current T, = 25 C prior to surge t= 20 ms - 65 t= 16.7 ms - 71 A Pt Ft for fusing t= 10ms - 21 As di,/dt Repetitive rate of rise of = [ly, = 12 A; Ig = 0.2 A; 100 Avis on-state current after dig/dt = 0.2 Afus triggering lam Peak gate current - 2 A Veu Peak gate voltage - 5 Vv Pem Peak gate power : 5 Ww Paravy Average gate power over any 20 ms - 0.5 Ww period Tat Storage temperature -40 150 C T, Operating junction - 425 C temperature Objective specification _ . See Philips Semiconductors for Design-in information 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/us. September 1997 452 Rev 1.000Phitips Semiconductors Three quadrant triacs guaranteed commutation Objective specification BTA208 series D, E and F THERMAL RESISTANCES SYMBOL | PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Pen jb Thermal resistance full cycle - - 2.0 | KW junction to mounting base | half cycle - - 2.4 | KW Rin jo Thermal resistance in free air - 60 - KAN junction to ambient STATIC CHARACTERISTICS T, = 25 C unless otherwise stated SYMBOL |PARAMETER CONDITIONS MIN. | TYP. MAX. UNIT BTA208- D wwE oF ler Gate trigger current? Vp =12V;1=0.1A T2+ G+ T2+ G- 5 10 25 mA T2- G- 5 10 25 mA 5 10 25 mA I Latching current Vo =12Vilep=O.1A T2+ G+ T2+ G- - 6 12 30 mA T2- G- - 9 18 45 mA - 6 12 30 mA ly Holding current Vp =12V; Ig7=0.1A - 6 12 30 mA V+ On-state voltage =10A - 1.3 1.65 Vv Ver Gate trigger voltage Vp =12V; 1 =0.1A - 0.7 1.5 Vv Vp = 400 V; 1, = 0.1 A; 0.25 | 0.4 - Vv T= 125C lo Off-state leakage current Vv = Voryimen - 0.1 0.5 mA T=125'C DYNAMIC CHARACTERISTICS T, = 25 C unless otherwise stated SYMBOL | PARAMETER CONDITIONS MIN. TYP. | MAX. | UNIT BTA208- |...D -E oe dV,/dt Critical rate of rise of Vow = 67% Vorminex 10 20] 50 - Vius off-state voltage T, = 125 C; exponential waveform; gate open circuit dleon/dt Critical rate of change of | Voy = 400 V; T, = 125 C; 1.8 2.5) 3.5 - A/ms commutating current Iryesas) = 8 A; dV. /at = 20v/ns; gate open circuit ty Gate controlled tum-on lim = 12 A; Vo = Voamimans - - - 2 - HS time 1, = 0.1 A; di,/dt = 5 A/us 2 Device does not trigger in the Te-, G+ quadrant. September 1997 453 Rev 1.000