Philips -Semiconductors Product specification High-speed double diode BAWS56W FEATURES DESCRIPTION PINNING Very smail plastic SMD package The BAWS6W consists of two PIN DESCRIPTION High switching speed: max. 4 ns high-speed switching diodes with 8 . 9? . common anodes, fabricated in planar ! cathode (k1) * Continuous reverse voltage: technology, and encapsulated in the 2 cathode (k2) max. 75 V very small plastic SMD SOT323 3 common anode e Repetitive peak reverse voltage: max. 85 V e Repetitive peak forward current: max. 500 mA. APPLICATIONS e High-speed switching in e.g. surface mounted circuits. LIMITING VALUES package 2 Fs Es Top view Marking code: A. 3 MAMOS2 Fig.1 Simplified outline (SOT323) and symbol. In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS j min. | MAX. | UNIT Per diode Varn repetitive peak reverse voltage - 8 |V Vr continuous reverse voltage - 75 IV lr continuous forward current single diode loaded; see Fig.2; - 150 |mA note 1 double diode loaded; see Fig.2;. - 130 |mA note 1 , lFRM repetitive peak forward current ~ 500 |mA lesm non-repetitive peak forward current | square wave; Tj = 25 C prior to surge; see Fig.4 t=1us - 4 IA t=1ms - 1 A t=1s - O5/A Prot total power dissipation Tamb = 25 C; note 1 - 200 | mW Tstg storage temperature -65 +150 [C T; junction temperature - 150 C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 17 1-210Phitips Semiconductors Product specification High-speed double diode - BAWS56W ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS | MIN. | MAX. | UNIT Per diode Ve forward voltage see Fig.3 lp =1mA - 715 mV lp =10mA - 855 mV le = 50 mA - 1 Vv Ip = 150 mA - 1.25 |V In reverse current see Fig.5 VR=25V - 30 nA VR=75V - 1 pA Vr = 25 V; Tj = 150 C - 30 pA Vr = 75 V; Tj = 150 C - 50 LA Ca diode capacitance f= 1 MHz; Vp = 0; see Fig.6 - 2.0 |pF ter reverse recovery time when switched from Ir = 10 mA to - 4 ns In = 10 mA; Ry, = 100 Q; measured at Ip = 1 mA; see Fig.7 Vir forward recovery voltage when switched from Ir = 10 mA; - 1.75 |V t, = 20 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT Pith itp thermal resistance from junction to tie-point 300 K/W Pith j-a thermal resistance from junction to ambient | note 1 625 K/AW Note 4. Device mounted on an FR4 printed-circuit board. 1996 Sep 17 1-211Philips. Semiconductors Product specification High-speed double diode BAWS56W GRAPHICAL DATA 'F (mA) 100 6 100 200 0 1 Ve) 2 Tamb (C) (1) T, = 150 C; typical values. Device mounted on an FR4 printed-circult board. (2) 1) = 25 C; typical values. (3) T= 25 C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of ambient Fig.3 Forward current as a function of forward temperature. voltage. 107 FSM (A) 10 1 107 4 1 10 10? 10 tp (us) 10 Sased on square wave currents. T, = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 17 1-212Philips Semiconductors Product specification High-speed double diode Pe BAW56W MBHI9T 25 (pF) 2.0 15 1.0 0.5 0 100 7; (2c) 200 0 5 10 15 2, m2 f= 1 MHz; T = 25 C. Fig.6 Reverse current as a function of junction Fig.6 Diode capacitance as a function of reverse temperature. voltage; typical values. 1996 Sep 17 4-213Phitips Semiconductors Product specification High-speed double diode BAW56W ee 4 i tr tp _> = T 1 | t a 10% r Re=S00 | | " SAMPLING wF a L--~-~-- + Josentoscore ! Ve VatipxAg R,=50 9 a 90% (1) | VR MGA&EI input signal output signal {1} ip =1 mA, Fig.7 Reverse recovery voltage test circuit and waveforms. J, 1kQ 450 2 cs I Vv 30% Rg=50 2 OSCILLOSCOPE Vv DUT. fr j | Rj= 50 2 10% MGAGG2 I t t rn ty ty input output signal signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 17 1-214