AUIRLR2905 AUIRLU2905 AUTOMOTIVE GRADE * * * * * * * * * * Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified HEXFET(R) Power MOSFET D V(BR)DSS RDS(on) max. G ID S Dpak AUIRLU2905 Ipak 42A S D G G Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. AUIRLR2905 27m D Description Base part number Package Type 55V D-Pak AUIRLRU2905 S I-Pak AUIRLU2905 G D S Gate Drain Source Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Tube Quantity 75 2000 3000 3000 75 Complete Part Number AUIRLR2905 AUIRLR2905TR AUIRLR2905TRL AUIRLR2905TRR AUIRLU2905 Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V 42 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 30 c IDM Pulsed Drain Current PD @TC = 25C Power Dissipation VGS Linear Derating Factor Gate-to-Source Voltage A 160 110 0.71 EAS Single Pulse Avalanche Energy (Thermally Limited) EAS (tested ) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range c Units h d c Soldering Temperature, for 10 seconds (1.6mm from case ) W 16 W/C V 210 mJ 200 25 A 11 mJ -55 to + 175 C 300 HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com (c) 2012 International Rectifier June 5, 2012 PD-97623A AUIRLR/U2905 Thermal Resistance h Parameter RJC Junction-to-Case RJA Junction-to-Ambient (PCB mount) RJA Junction-to-Ambient g Typ. Max. --- 1.4 --- 50 --- 110 Units C/W Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 --- --- --- --- 1.0 21 --- --- --- --- --- --- 0.070 --- --- 0.027 --- 0.030 --- 0.040 --- 2.0 --- --- --- 25 --- 250 --- 100 --- -100 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 25A VGS = 5.0V, ID = 25A VGS = 4.0V, ID = 21A V VDS = VGS, ID = 250A S VDS = 25V, ID = 25A A VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, T J = 150C nA VGS = 16V VGS = -16V f f f Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Min. Typ. Max. Units Qg Q gs Q gd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Parameter --- --- --- --- --- --- --- --- --- --- --- 11 84 26 15 4.5 48 8.6 25 --- --- --- --- --- LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 1700 400 150 --- --- --- and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 nC ns nH pF Conditions ID = 25A VDS = 44V VGS = 5.0V VDD = 28V ID = 25A RG = 3.4 VGS = 5.0V, RD = 1.1 Between lead, f f D G S Diode Characteristics Min. Typ. Max. Units IS Continuous Source Current Parameter --- --- 42 ISM (Body Diode) Pulsed Source Current --- --- 160 VSD (Body Diode) Diode Forward Voltage dv/dt trr Q rr ton Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c e A --- --- --- --- --- 5.0 80 210 1.3 --- 120 320 Conditions D MOSFET symbol showing the integral reverse G S p-n junction diode. V TJ = 25C, IS = 25A, VGS = 0V V/ns TJ = 175C, IS = 25A, VDS = 55V ns TJ = 25C, IF = 25A nC di/dt = 100A/s f f Intrins ic turn-on time is negligible (turn-on is dominatedby LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L =470H RG = 25, IAS = 25A. (See Figure 12) When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Ris measured at Tj approximately 90C. ISD 25A, di/dt 270A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. 2 www.irf.com (c) 2012 International Rectifier June 6, 2012 AUIRLR/U2905 1000 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 100 10 2.5V 20s PULSE WIDTH T J = 25C 1 0.1 1 10 100 10 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25C 100 TJ = 175C 10 V DS= 25V 20s PULSE WIDTH 4.0 5.0 6.0 7.0 8.0 1 10 9.0 A I D = 41A 2.5 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com (c) 2012 International Rectifier A 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) 3 A 100 Fig 2. Typical Output Characteristics 1000 3.0 20s PULSE WIDTH T J = 175C VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 2.5V 1 0.1 A 100 VDS , Drain-to-Source Voltage (V) 2.0 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) TOP June 6, 2012 AUIRLR/U2905 2800 15 2400 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = Cds + C gd C, Capacitance (pF) 2000 1600 Coss 1200 800 Crss 400 0 1 10 100 I D = 25A V DS = 44V V DS = 28V 12 9 6 3 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 VDS , Drain-to-Source Voltage (V) 20 30 40 50 60 70 A Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 10 100 TJ = 175C 100 10s 100s 10 1ms TJ = 25C VGS = 0V 10 0.4 4 0.8 1.2 1.6 2.0 A 2.4 TC = 25C TJ = 175C Single Pulse 1 1 10ms A 10 100 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com (c) 2012 International Rectifier June 6, 2012 AUIRLR/U2905 50 LIMITED BY PACKAGE VGS D.U.T. RG 40 ID , Drain Current (A) RD V DS + -VDD 5V 30 Pulse Width s Duty Factor 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 www.irf.com (c) 2012 International Rectifier June 6, 2012 15V L VDS D.U.T RG IAS 20V DRIVER + V - DD 0.01 tp Fig 12a. Unclamped Inductive Test Circuit A E AS , Single Pulse Avalanche Energy (mJ) AUIRLR/U2905 500 TOP BOTTOM 400 ID 10A 17A 25A 300 200 100 0 VDD = 25V 25 50 A 75 100 125 150 175 Starting TJ , Junction Temperature (C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. www.irf.com (c) 2012 International Rectifier IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit June 6, 2012 AUIRLR/U2905 Peak Diode Recovery dv/dt Test Circuit D.U.T + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + - - + RG + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= - V DD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS 7 www.irf.com (c) 2012 International Rectifier June 6, 2012 AUIRLR/U2905 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak Part Marking Information Part Number AULR2905 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com (c) 2012 International Rectifier June 6, 2012 AUIRLR/U2905 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com (c) 2012 International Rectifier June 6, 2012 AUIRLR/U2905 Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-PAK MSL1 I-PAK MSL1 Class M4 (+/- 425V) AEC-Q101-002 ESD Human Body Model Class H1B (+/- 1000V) AEC-Q101-001 Charged Device Model Class C5 (+/- 1125V) AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Highest passing voltage. 10 www.irf.com (c) 2012 International Rectifier June 6, 2012 AUIRLR/U2905 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. 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