HEXFET® Power MOSFET
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V
(BR)DSS
55V
R
DS(on)
max. 27m
I
D
42A
GDS
Gate Drain Source
D-Pak
AUIRLRU2905
I-Pak
AUIRLU2905
G
D
S
GDS
AUTOMOTIVE GRADE AUIRLU2905
AUIRLR2905
Base part number Package Type Complete Part Number
Form
Quantity
AUIRLR2905 Dpak Tube 75 AUIRLR2905
Tape and Reel 2000 AUIRLR2905TR
Tape and Reel Left 3000 AUIRLR2905TRL
Tape and Reel Right 3000 AUIRLR2905TRR
AUIRLU2905 Ipak Tube 75 AUIRLU2905
Standard Pack
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
E
AS
(tested ) Single Pulse Avalanche Energy Tested Value
h
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case ) 300
110
0.71
± 16
11
200
210
25
-55 to + 175
Max.
42
30
160
1www.irf.com © 2012 International Rectifier June 5, 2012 PD-97623A
AUIRLR/U2905
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2
VDD = 25V, starting TJ = 25°C, L =470μH
RG = 25, IAS = 25A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300μs; duty cycle 2%.
When mounted on 1" square PCB (FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
Ris measured at Tj approximately 90°C.
ISD 25A, di/dt 270A/μs, VDD V(BR)DSS,
TJ 175°C
Notes:
S
D
G
S
D
G
Thermal Resistance
Parameter Typ. Max. Units
R
JC
Junction-to-Case
h
––– 1.4
R
JA
Junction-to-Ambient (PCB mount)
g
––– 50 °C/W
R
JA
Junction-to-Ambient ––– 110
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.070 ––– V/°C
––– ––– 0.027
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.030
––– ––– 0.040
V
GS (t h )
Gate Threshold Voltage 1.0 ––– 2.0 V
gfs Forward Transconductance 21 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– 25 μA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge ––– ––– 48
Q
gs
Gate-to-Source Charge ––– ––– 8.6 nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 25
t
d(on)
Turn-On Delay Time ––– 11 –––
t
r
Rise Time ––– 84 –––
t
d(off)
Turn-Off Delay Time ––– 26 ––– ns
t
f
Fall Time ––– 15 –––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
C
iss
Input Capacitance ––– 1700 –––
C
oss
Output Capacitance ––– 400 –––
C
rss
Reverse Transfer Capacitance ––– 150 ––– pF
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 42
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 160
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.3 V
dv/dt Peak Diode Recovery
e
––– 5.0 ––– V/ns
t
rr
Reverse Recovery Time ––– 80 120 ns
Q
rr
Reverse Recovery Charge ––– 210 320 nC
t
on
Forward Turn-On Time
Intrins ic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
di/dt = 100A/μs
f
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 25A
f
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
T
J
= 175°C, I
S
= 25A, V
DS
= 55V
MOSFET sy mbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
f
T
J
= 25°C, I
F
= 25A
V
DS
= 44V
Conditions
V
GS
= 5.0V, R
D
= 1.1
f
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 5.0V
f
V
DD
= 28V
I
D
= 25A
R
G
= 3.4
V
GS
= 5.0V, I
D
= 25A
f
V
GS
= 4.0V, I
D
= 21A
f
V
DS
= 25V, I
D
= 25A
I
D
= 25A
V
GS
= 16V
V
GS
= -16V
Conditions
AUIRLR/U2905
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20μs PULSE WIDTH
T = 25°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20μs PULSE WIDTH
T = 175°C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
1
10
100
1000
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 25V
20μs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 41A
D
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4
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
400
800
1200
1600
2000
2400
2800
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
3
6
9
12
15
0 10203040506070
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 44V
V = 28V
I = 25A
DS
DS
D
10
100
1000
0.4 0.8 1.2 1.6 2.0 2.4
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10μs
100μs
1ms
10ms
A
T = 25°C
T = 175°C
Single Pulse
C
J
AUIRLR/U2905
www.irf.com © 2012 International Rectifier June 6, 20125
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width µs
Duty Factor
RD
VGS
RG
D.U.T.
5V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRLR/U2905
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6
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3F
50K
.2F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
0
100
200
300
400
500
25 50 75 100 125 150 175
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP 10A
17A
BOTTOM 25A
V = 25V
D
DD
AUIRLR/U2905
www.irf.com © 2012 International Rectifier June 6, 20127
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
AUIRLR/U2905
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8
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D-Pak Part Marking Information
AULR2905
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive
Part Number
IR Logo
Lot Code
AUIRLR/U2905
www.irf.com © 2012 International Rectifier June 6, 20129
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRLR/U2905
www.irf.com © 2012 International Rectifier June 6, 2012
10
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
D-PAK MSL1
I-PAK MSL1
Charged Device Model Class C5 (+/- 1125V)
††
AEC-Q101-005
Moisture Sensitivity Level
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
RoHS Complia nt Yes
ESD
Machine Model Class M4 (+/- 425V)
††
AEC-Q101-002
Human Body Model Class H1B (+/- 1000V)
††
AEC-Q101-001
AUIRLR/U2905
www.irf.com © 2012 International Rectifier June 6, 201211
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reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers designated
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with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
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