2N5172 Silicon NPN Transistor Audio Power Amplifier TO-92 Type Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation , PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. These ratings are limiting values above which the serviceability of any device may be impaired. Note 2. These are steady state limits and are based on a maximum junction temperature of 150C. Electrical Characteristics: (TA = +25C unless otherewise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 25 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 3 25 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 5 - - V Collector Cutoff Current ICBO VCB = 25V, IE = 0 - - 100 nA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 - - 100 nA DC Current Gain hFE VCE = 10V, IC = 10mA, Note 3 100 - 500 - Collector-Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 1.0mA, Note 3 - - 0.25 V Base-Emitter On Voltage VBE(on) VCE = 10V, IC = 10mA, Note 3 0.5 - 1.2 V Small-Signal Current Gain hfe IC = 10mA, VCE = 10V, f = 1.0 kHz 100 - 750 pF Collector-Base Capacitance Ccb VCB = 10V, f = 1.0 MHz 1.6 - 10 pF Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max