SKM200GB12E4
© by SEMIKRON Rev. 2 – 16.06.2009 1
SEMITRANS®3
GB
IGBT4 Modules
SKM200GB12E4
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x ICNOM
• Soft switching 4. Generation CAL
diode (CAL4)
Typical Applications
• AC inverter drives
•UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 1200 V
ICTj= 175 °C Tc=25°C 314 A
Tc=80°C 242 A
ICnom 200 A
ICRM ICRM = 3xICnom 600 A
VGES -20 ... 20 V
tpsc
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj= 150 °C 10 µs
Tj-40 ... 175 °C
Inverse diode
IFTj= 175 °C Tc=25°C 229 A
Tc=80°C 172 A
IFnom 200 A
IFRM IFRM = 3xIFnom 600 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 990 A
Tj-40 ... 175 °C
Module
It(RMS) 500 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=200A
VGE =15V
chiplevel
Tj=25°C 1.8 2.05 V
Tj= 150 °C 2.2 2.4 V
VCE0 Tj=25°C 0.8 0.9 V
Tj= 150 °C 0.7 0.8 V
rCE VGE =15V Tj=25°C 5.0 5.8 mΩ
Tj= 150 °C 7.5 8.0 mΩ
VGE(th) VGE=VCE, IC=7.6mA 5 5.8 6.5 V
ICES VGE =0V
VCE = 1200 V
Tj=25°C 0.1 0.3 mA
Tj= 150 °C mA
Cies VCE =25V
VGE =0V
f=1MHz 12.3 nF
Coes f=1MHz 0.81 nF
Cres f=1MHz 0.69 nF
QGVGE =- 8 V...+ 15 V 1130 nC
RGint Tj=25°C 3.8 Ω
td(on) VCC = 600 V
IC=200A
VGE =±15V
RG on =1Ω
RG off =1Ω
di/dton = 5500 A/µs
di/dtoff = 2300 A/µs
Tj= 150 °C 204 ns
trTj= 150 °C 40 ns
Eon Tj= 150 °C 21 mJ
td(off) Tj= 150 °C 490 ns
tfTj= 150 °C 107 ns
Eoff Tj= 150 °C 27 mJ
Rth(j-c) per IGBT 0.14 K/W
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SKM200GB12E4
2 Rev. 2 – 16.06.2009 © by SEMIKRON
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
VF = VEC IF=200A
VGE =0V
chip
Tj=25°C 2.2 2.52 V
Tj= 150 °C 2.15 2.47 V
VF0 Tj=25°C 1.3 1.5 V
Tj= 150 °C 0.9 1.1 V
rFTj=25°C 4.5 5.1 mΩ
Tj= 150 °C 6.3 6.8 mΩ
IRRM IF=200A
di/dtoff = 4450 A/µs
VGE =±15V
VCC = 600 V
Tj= 150 °C 174 A
Qrr Tj= 150 °C 33 µC
Err Tj= 150 °C 13 mJ
Rth(j-c) per diode 0.26 K/W
Module
LCE 15 20 nH
RCC'+EE' terminal-chip TC=25°C 0.25 mΩ
TC= 125 °C 0.5 mΩ
Rth(c-s) per module 0.02 0.038 K/W
Msto heat sink M6 3 5 Nm
Mtto terminals M6 2.5 5 Nm
Nm
w325 g
SEMITRANS®3
GB
IGBT4 Modules
SKM200GB12E4
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x ICNOM
• Soft switching 4. Generation CAL
diode (CAL4)
Typical Applications
• AC inverter drives
•UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
http://store.iiic.cc/
SKM200GB12E4
© by SEMIKRON Rev. 2 – 16.06.2009 3
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
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SKM200GB12E4
4 Rev. 2 – 16.06.2009 © by SEMIKRON
Fig. 7: Typ. switching times vs. ICFig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance Fig. 10: CAL diode forward characteristic
Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge
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SKM200GB12E4
© by SEMIKRON Rev. 2 – 16.06.2009 5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
Semitrans 3
GB
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