12/09/10
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HEXFET® Power MOSFET
S
D
G
AUIRL3705Z
AUIRL3705ZS
AUIRL3705ZL
D2Pak
AUIRL3705ZS
TO-220AB
AUIRL3705Z
TO-262
AUIRL3705ZL
GDS
Gate Drain Source
AUTOMOTIVE GRADE
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
Features
lLogic Level
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified *
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS 55V
RDS(on) typ. 6.5mΩ
max. 8.0mΩ
ID (Silicon Limited) 86A
l
ID (Package Limited) 75A
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy(Thermally limited)
d
E
AS
(Tested ) Single Pulse Avalanche Energy Tested Value
h
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
g
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
k
––– 1.14
R
θCS
Case-to-Sink, Flat Greased Surface
i
0.50 –––
R
θJA
Junction-to-Ambient
i
––– 62
R
θJA
Junction-to-Ambient (PCB Mount)
j
––– 40
°C/W
A
mJ
°C
180
120
See Fig.12a, 12b, 15, 16
130
0.88
± 16
Max.
86
l
61
340
75
-55 to + 175
300 (1.6mm from case )
10 lbf
y
in (1.1N
y
m)
PD - 96345
AUIRL3705Z/S/L
2www.irf.com
S
D
G
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.09mH
RG = 25Ω, IAS = 52A, VGS =10V. Part not recommended for use
above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as
Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
Notes:
This is only applied to TO-220AB pakcage.
This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 75A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.055 ––– V/°C
––– 6.5 8.0
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 11
––– ––– 12
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V
gfs Forward Transconductance 150 ––– ––– V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200
Gate-to-Source Reverse Leakage ––– ––– -200
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge ––– 40 60
Q
gs
Gate-to-Source Charge –––12–––
Q
gd
Gate-to-Drain ("Miller") Charge –––21–––
t
d(on)
Turn-On Delay Time –––17–––
t
r
Rise Time ––– 240 –––
t
d(off)
Turn-Off Delay Time –––26–––
t
f
Fall Time –––83–––
L
D
Internal Drain Inductance Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance from
p
acka
g
e
and center of die contact
C
iss
Input Capacitance ––– 2880 –––
C
oss
Output Capacitance ––– 420 –––
C
rss
Reverse Transfer Capacitance ––– 220 –––
C
oss
Output Capacitance ––– 1500 –––
C
oss
Output Capacitance ––– 330 –––
C
oss
eff. Effective Output Capacitance ––– 510 –––
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Volta
g
e ––– ––– 1.3 V
t
rr
Reverse Recover
y
Time ––– 16 24 ns
Q
rr
Reverse Recover
y
Char
g
e–––7.411nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
75
340
–––
–––
–––
–––
ns
nH
pF
A
mΩ
µA
nA
nC
––– 4.5
–––
–––
–––7.5
V
GS
= 5.0V, I
D
= 43A
e
V
DS
= 25V, I
D
= 52A
I
D
= 43A
V
DS
= 44V
V
GS
= 16V
V
GS
= -16V
V
GS
= 4.5V, I
D
= 30A
e
Conditions
V
GS
= 5.0V
e
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 52A, V
GS
= 0V
e
T
J
= 25°C, I
F
= 43A, V
DD
= 28V
di/dt = 100A/
µ
s
e
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 52A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 5.0V
e
V
DD
= 28V
I
D
= 43A
R
G
= 4.3 Ω
AUIRL3705Z/S/L
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Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Qualification Information
†
3L-D2
PAK MSL1
3L-TO-262
3L-TO-220
Moisture Sensitivity Level
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
N/A
ESD
Machine Model
Class M4 (425V)
( per AEC-Q101-002)
Human Body Model
Class H1C (2000V)
(per AEC-Q101-001)
Charged Device Model
Class C5 (1125V)
(per AEC-Q101-005)
RoHS Compliant Yes
AUIRL3705Z/S/L
4www.irf.com
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
vs. Drain Current
0.1 110 100 1000
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
BOTTOM 2.8V
≤60µs PULSE WIDTH
Tj = 25°C
2.8V
0.1 110 100 1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
2.8V
≤60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
BOTTOM 2.8V
0246810 12 14 16
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 175°C
VDS = 15V
≤60µs PULSE WIDTH
0 20 40 60 80 100 120
ID,Drain-to-Source Current (A)
0
20
40
60
80
100
120
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 8.0V
AUIRL3705Z/S/L
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 10203040
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VGS, Gate-to-Source Voltage (V)
VDS= 44V
VDS= 28V
VDS= 11V
ID= 52A
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
1.00
10.00
100.00
1000.00
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
AUIRL3705Z/S/L
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 43A
VGS = 5.0V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.5413 0.000384
0.5985 0.002778
τJ
τJ
τ1
τ1
τ2
τ2
R1
R1R2
R2
τ
τC
Ci i/Ri
Ci= τi/Ri
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
10
20
30
40
50
60
70
80
90
100
ID, Drain Current (A)
Limited By Package
AUIRL3705Z/S/L
www.irf.com 7
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
1K
VCC
DUT
0
L
Fig 13b. Gate Charge Test Circuit
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 5.7A
8.5A
BOTTOM 52A
-75 -50 -25 025 50 75 100 125 150 175 200
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
3.0
VGS(th) Gate threshold Voltage (V)
ID = 250µA
AUIRL3705Z/S/L
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Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
25
50
75
100
125
150
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 52A
AUIRL3705Z/S/L
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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET®
Power MOSFETs
VDS
90%
10%
VGS
t
d(on) trtd(off) tf
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* V
GS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
AUIRL3705Z/S/L
10 www.irf.com
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUL3705Z
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRL3705Z/S/L
www.irf.com 11
D2Pak Part Marking Information
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Lot Code
YWWA
XX or XX
Part Number
IR Logo
AUL3705ZS
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRL3705Z/S/L
12 www.irf.com
TO-262 Part Marking Information
TO-262 Package Outline ( Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Lot Code
YWWA
XX or XX
Part Number
IR Logo
AUL3705ZL
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRL3705Z/S/L
www.irf.com 13
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D2Pak Tape & Reel Infomation
AUIRL3705Z/S/L
14 www.irf.com
Ordering Information
Base part Package Type Standard Pack Complete Part Number
Form Quantity
AUIRL3705Z TO-220 Tube 50 AUIRL3705Z
AUIRL3705ZL TO-262 Tube 50 AUIRL3705ZL
AUIRL3705ZS D2Pak Tube 50 AUIRL3705ZS
Tape and Reel Left 800 AUIRL3705ZSTRL
Tape and Reel Right 800 AUIRL3705ZSTRR
AUIRL3705Z/S/L
www.irf.com 15
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to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and
to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and
/ or customer specific requirements with regards to product discontinuance and process change notification. All products are sold
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