PD - 96345 AUTOMOTIVE GRADE AUIRL3705Z AUIRL3705ZS AUIRL3705ZL Features l l l l l l l l HEXFET(R) Power MOSFET Logic Level Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS D 55V RDS(on) typ. max. 8.0m ID (Silicon Limited) 86Al ID (Package Limited) 75A G S 6.5m Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB AUIRL3705Z Absolute Maximum Ratings D2 Pak AUIRL3705ZS TO-262 AUIRL3705ZL G D S Gate Drain Source Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified. Parameter ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS EAS (Tested ) IAR EAR TJ TSTG Max. Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy(Thermally limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw c c h g i Thermal Resistance Parameter k RJC Junction-to-Case RCS Case-to-Sink, Flat Greased Surface RJA Junction-to-Ambient RJA Junction-to-Ambient (PCB Mount) i i j d Units l 86 61 75 340 130 0.88 16 120 180 See Fig.12a, 12b, 15, 16 A W W/C V mJ A mJ -55 to + 175 C 300 (1.6mm from case ) 10 lbf in (1.1N m) y y Typ. Max. --- 1.14 0.50 --- --- 62 --- 40 Units C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 12/09/10 AUIRL3705Z/S/L Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current gfs IDSS IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 --- --- --- --- 1.0 150 --- --- --- --- --- 0.055 6.5 --- --- --- --- --- --- --- --- --- --- 8.0 11 12 3.0 --- 20 250 200 -200 V V/C m V V A nA Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 52A VGS = 5.0V, ID = 43A VGS = 4.5V, ID = 30A VDS = VGS, ID = 250A VDS = 25V, ID = 52A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C VGS = 16V VGS = -16V e e e Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- --- 40 12 21 17 240 26 83 60 --- --- --- --- --- --- --- 4.5 --- --- 7.5 --- --- --- 2880 420 --- --- --- --- --- --- 220 1500 330 510 --- --- --- --- Min. Typ. Max. nC ns nH pF ID = 43A VDS = 44V VGS = 5.0V VDD = 28V ID = 43A RG = 4.3 VGS = 5.0V e e Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V D G S = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V f Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c --- 75 --- --- 340 --- --- --- --- 16 7.4 1.3 24 11 Conditions MOSFET symbol A V ns nC showing the integral reverse D G p-n junction diode. TJ = 25C, IS = 52A, VGS = 0V TJ = 25C, IF = 43A, VDD = 28V di/dt = 100A/s e S e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.09mH RG = 25, IAS = 52A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. 2 --- Units This is only applied to TO-220AB pakcage. This is applied to D2Pak, when mounted on 1" square PCB (FR4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ of approximately 90C. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 75A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. www.irf.com AUIRL3705Z/S/L Qualification Information Automotive (per AEC-Q101) Qualification Level Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. MSL1 3L-D2 PAK Moisture Sensitivity Level 3L-TO-262 N/A 3L-TO-220 Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Class M4 (425V) ( per AEC-Q101-002) Class H1C (2000V) (per AEC-Q101-001) Class C5 (1125V) (per AEC-Q101-005) Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRL3705Z/S/L 1000 1000 VGS 12V 10V 8.0V 5.0V 4.5V 3.5V 3.0V 2.8V 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 1 2.8V 0.1 BOTTOM 10 2.8V 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 0.01 0.1 1 1 10 100 0.1 1000 10 100 1000 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 120 Gfs, Forward Transconductance (S) 1000 ID, Drain-to-Source Current () 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) T J = 175C 100 10 TJ = 25C 1 VDS = 15V 60s PULSE WIDTH 0.1 0 2 4 6 8 10 12 14 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS 12V 10V 8.0V 5.0V 4.5V 3.5V 3.0V 2.8V T J = 25C 100 80 60 TJ = 175C 40 20 V DS = 8.0V 0 16 0 20 40 60 80 100 120 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com AUIRL3705Z/S/L 100000 6.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= 52A VGS, Gate-to-Source Voltage (V) C rss = C gd C, Capacitance(pF) C oss = Cds + C gd 10000 Ciss 1000 Coss Crss 100 VDS= 44V VDS= 28V 5.0 VDS= 11V 4.0 3.0 2.0 1.0 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 10 20 30 40 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 1000.00 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 175C 100.00 100 T J = 25C 10.00 100sec 10 VGS = 0V 10msec 1 1.00 0.0 0.5 1.0 1.5 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 1msec Tc = 25C Tj = 175C Single Pulse 2.0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRL3705Z/S/L 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 90 Limited By Package ID, Drain Current (A) 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 ID = 43A VGS = 5.0V 1.5 1.0 0.5 175 -60 -40 -20 0 T C , Case Temperature (C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.1 0.01 0.10 0.05 J 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) R1 R1 J 1 R2 R2 C 2 1 2 Ci= i/Ri Ci i/Ri Ri (C/W) 0.5413 i (sec) 0.000384 0.5985 0.002778 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRL3705Z/S/L 15V D.U.T RG VGS 20V DRIVER L VDS + V - DD IAS tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 500 ID TOP 5.7A 8.5A BOTTOM 52A 400 300 200 100 0 25 V(BR)DSS 50 75 100 125 150 175 Starting T J , Junction Temperature (C) tp Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms QGS QGD VG Charge Fig 13a. Basic Gate Charge Waveform VGS(th) Gate threshold Voltage (V) 3.0 10 V Q G 2.5 2.0 ID = 250A 1.5 1.0 0.5 -75 -50 -25 DUT 25 50 75 100 125 150 175 200 T J , Temperature ( C ) L 0 0 VCC Fig 14. Threshold Voltage vs. Temperature 1K Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRL3705Z/S/L 100 Duty Cycle = Single Pulse Avalanche Current (A) 0.01 10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.05 0.10 1 0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 150 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 52A 125 100 75 50 25 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature 8 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav www.irf.com AUIRL3705Z/S/L D.U.T Driver Gate Drive P.W. + - - - Reverse Recovery Current + RG V DD * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test P.W. Period D.U.T. ISD Waveform + D= VGS=10V* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer Period + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS VGS RD D.U.T. RG + - V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRL3705Z/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUL3705Z YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRL3705Z/S/L D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information Part Number AUL3705ZS YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRL3705Z/S/L TO-262 Package Outline ( Dimensions are shown in millimeters (inches)) TO-262 Part Marking Information Part Number AUL3705ZL YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com AUIRL3705Z/S/L D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. www.irf.com 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 13 AUIRL3705Z/S/L Ordering Information Base part Package Type AUIRL3705Z AUIRL3705ZL TO-220 TO-262 AUIRL3705ZS D2Pak 14 Standard Pack Form Tube Tube Complete Part Number Quantity 50 50 AUIRL3705Z AUIRL3705ZL Tube Tape and Reel Left Tape and Reel Right 50 800 800 AUIRL3705ZS AUIRL3705ZSTRL AUIRL3705ZSTRR www.irf.com AUIRL3705Z/S/L IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 15